Browse > Article

HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate  

Jeon, H.S. (Department of Applied Sciences, Korea Maritime University)
Hwang, S.L. (Department of Applied Sciences, Korea Maritime University)
Kim, K.H. (Department of Applied Sciences, Korea Maritime University)
Jang, K.S. (Department of Applied Sciences, Korea Maritime University)
Lee, C.H. (Department of Applied Sciences, Korea Maritime University)
Yang, M. (Department of Applied Sciences, Korea Maritime University)
Ahn, H.S. (Department of Applied Sciences, Korea Maritime University)
Kim, S.W. (Department of Physics, Andong National University)
Jang, S.H. (Samsung Electro-Mechanics Co., Ltd.)
Lee, S.M. (Samsung Electro-Mechanics Co., Ltd.)
Park, G.H. (Samsung Electro-Mechanics Co., Ltd.)
Koike, M. (Samsung Electro-Mechanics Co., Ltd.)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.17, no.1, 2007 , pp. 6-10 More about this Journal
Abstract
The a-plane GaN layer on r-plane $Al_2O_3$ substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The GaN/InGaN heterostructure is performed by selective area growth (SAG) method. The heterostructure consists of a flown over mixed-sourec are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and $NH_3$ are maintained at 10 sccm and 500 sccm, respectively. The temperatures of GaN source zone is $650^{\circ}C$. In case of InGaN, the temperature of source zone is $900^{\circ}C$. The grown temperatures of GaN and InGaN layer are $820^{\circ}C\;and\;850^{\circ}C$, respectively. The EL (electroluminescence) peak of GaN/InGaN heterostructure is at nearly 460 nm and the FWHM (full width at half maximum) is 0.67 eV. These results are demonstrated that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE with multi-sliding boat system.
Keywords
HVPE; R-plane sapphire; Heterostructure; a-plane GaN; Multi-sliding boat; Mixed-source;
Citations & Related Records
연도 인용수 순위
  • Reference
1 B.A. Haskell, F. Wu, S. Matsuda, M.D. Craven, P.T Fini, S.P. Denbarrs, J.S. Speck and S. Nakamura, 'Structural and morphological characteristics of planar (11-20) $\alpha$-plane gallium nitride grown by hydride vapor phase epitaxy', Appl. Phys. Lett. 83 (2003) 1554   DOI   ScienceOn
2 M.D. Craven, S.H. Lim, F. Wu, J.S. Speck and S.P. DenBaars, 'Structural characterization of nonpolar (11-20) $\alpha$-plane GaN thin films grown on (1-102) $\gamma$-plane sapphire', Appl, Phys. Lett. 81 (2002) 469   DOI   ScienceOn
3 H.M. Ng, 'Molecular-beam epitaxy of GaN/$Al_{x}Ga_{1-x}N$ multiple quantum wells on R-plane (10-12) sapphire substrates', Appl. Phys. Lett. 80 (2002) 4369   DOI   ScienceOn
4 B.S. Ahn, K.H. Kim, M. Yang, J.Y. Yi, H.J. Lee, C.R. Cho, H.K. Cho, S.W. Kim, T. Narita, Y. Honda, M. Yamaguchi and N. Sawaki, 'Growth of thick Alan by mixed-source hydride vapor phase epitaxy', Appl. Surf. Sci. 243 (2005) 178   DOI
5 R. Langer, J. Simon, V. Ortiz, N. T Pelekanos, A. Barski, R. Andre and M. Godlewski, 'Giant electric fields in unstrained GaN single quantum wells', Appl. Phys. Lett. 74 (1999) 3827   DOI
6 K. Xu, J Xu, P.Z. Deng, R.S. Qui and ZJ. Fang, 'MOCVD growth of GaN on $LiAlO_{2}$ (100) substrates', Phys. Status Solidi A 176 (1999) 589   DOI
7 T Nishida, H. Saito and N. Kobayashi, 'Efficient and high-power AIGaN-based ultraviolet light-emitting diode grown on bulk GaN', Appl, Phys. Lett. 79 (2001) 711   DOI   ScienceOn
8 T. Paskova, V. Darakchieva, P.P. Paskov, J. Birch, E. Valcheva, P.O.A. Pearson, B. Amaudov, S. Tungasmitta and B. Monemar, 'Properties of nonpolar $\alpha$-plane GaN films grown by HVPE with AIN buffers', J. Cryst. Growth 281 (2005) 55   DOI   ScienceOn
9 A. Kinoshita, H. Hirayama, M. Ainoya, Y. Aoyagi and A. Hirata, 'Room-temperature operation at 333 nm of $Al_{0.03}Ga_{0.97}N/Al_{0.25}Ga_{0.75}N$ quantum-well light-emitting diodes with Mg-doped superlattice layers', App J. Phys. Lett. 77 (2000) 175   DOI   ScienceOn
10 YJ. Yu, M.Y. Ryu, P.W Yu, D.J. Kim and SJ. Park, 'Optical investigation of InGaN/GaN quantum well structures with various barrier widths', J. Korean Phys. Soc. 38 (2001) 134
11 M.M. Wong, J.C. Denyszyn, CJ. Collins, U. Chowdhury, TG. Zhu, K.S. Kim and R.D. Dupuis, 'AIGaN/AIGaN double-heterojunction ultraviolet light-emitting diodes grown by metal organic chemical vapour deposition', Electron. Lett. 37 (2001) 1188   DOI   ScienceOn
12 K.P. O'Donnell, I. Femadez-Torrente, P.R. Edwards and R.W, Martin, 'The composition dependence of the $In_{x}Ga_{1-x}N$ bandgap', J. Cryst. Growth 269 (2004) 100
13 H.M. Kim, J.S. Choi, J.E. Oh and TK. Yoo, 'Cathodoluminescence characterization of GaN thick films grown by using the HVPE method', J. Korean Phys. Soc. 37 (2000) 956   DOI   ScienceOn
14 TG. Zhu, J.C Denyszyn, U. Chowdhury, U. Chowdhury, M.M. Wong and R.D. Dupuis, 'AlGaN-GaN UV lightemitting diodes grown on SiC by metal-organic chemical vapor deposition', IEEE J. Sele. Topic. Quant. Electron. 8 (2002) 298   DOI   ScienceOn
15 H.M. Wang, C.Q. Chen, Z. Gong, J.P. Zhang, M. Gaevski, M. Su, J.W Yang and M.A. Khan, 'Anisotropic structural characteristics of (11-20) GaN templates and coalesced epitaxial lateral overgrown films deposited on (10-12) sapphire', Appl. Phys. Lett. 84 (2004) 499   DOI   ScienceOn