• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.1 s.343
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• pp.1-6
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• 2006

This paper proposes substrate-bias voltage generator to reduce leakage power consumption of digital logic circuits operating at supply voltage of 0.5V. Proposed substrate-bias voltage generator is composed of VSS and VBB generator. The former circuit produces negative voltage and supplies its output voltage for VBB generator. As a result VBB generator develops much lower negative voltage than that of conventional one. Proposed circuit is fabricated using 0.18um 1Poly-6Metal CMOS process and measurement result demonstrated stable operation with substrate-bias voltage of -0.95V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.456-459
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• 2004

Analog film/screen systems have been being changed to a digital x-ray imaging device using direct conversion materials. Photocoductors for a direct detection flat-panel imager require high x-ray absorption, ionization and charge collection, low leakage current and large area deposition. In this work, $HgI_2$ films with excellent properties for x-ray detector were deposited by screen printing method. The thickness of $HgI_2$ film was about $150\;{\mu}m$. The passivation layer is fabricated using a-Se and parlyene, the both fabrication $HgI_2$ film were compared for analyzing the leakage current reduction. We measured electrical properties-leakage current, photosensitivity, SNR though I-V measurement, As the result, $HgI_2$ film using a-Se passivation layer had the greater

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.10-15
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• 2008

In this paper, a new NMOS gate cross-connected current-mirror type bridge rectifier for UHF RFID applications is presented. The DC converting characteristics of the proposed rectifier are analyzed with the high frequency equivalent circuit and the gate capacitance reduction technique for reducing the gate leakage current due to the increasing of operating frequency is also proposed theoretically by circuitry method. As the results, the proposed rectifier shows nearly same DC output voltages as the existing NMOS gate cross-connected rectifier, but it shows the gate leakage current reduced to less than 1/4 and the power consumption reduced more than 30% at the load resistor, and it shows more stable DC supply voltages for the valiance of load resistance. In addition, the proposed rectifier shows high enough and well-rectified DC voltages for the frequency range of 13.56MHz HF(for ISO 18000-3), 915MHz UHF(for ISO 18000-6), and 2.45 GHz microwave(for ISO 18000-4). Therefore, the proposed rectifier can be used as a general purpose one to drive RFID transponder chips on various RFID systems which use specified frequencies.

• Journal of Korea Society of Industrial Information Systems
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• v.21 no.1
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• pp.17-25
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• 2016

This paper proposes an ultra-low power design methodology for asynchronous circuits which combines with power switch structure used for reducing leakage current in the synchronous circuits. Compared to existing delay-insensitive asynchronous circuits such as static NCL and semi-static NCL, the proposed methodology provides the leakage power reduction in the NULL mode due to the high Vth of the power switches and the switching power reduction at the switching moment due to the smaller area even though it has a reasonable speed penalty. Therefore, it will become a low power design methodology required for IoT system design placing more value on power than speed. In this paper, the proposed methodology has been evaluated by a $4{\times}4$ multiplier designed using 0.11 um CMOS technology, and the simulation results have been compared to the conventional asynchronous circuits in terms of circuit delay, area, switching power and leakage power.

• Journal of IKEEE
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• v.27 no.4
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• pp.644-649
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• 2023

As the cell spacing decreases during the scaling process of DRAM(Dynamic Random Access Memory), the reduction in STI(Shallow Trench Isolation) thickness leads to an increase in sub-threshold leakage due to the passing word line effect. The increase in sub-threshold leakage current caused by the voltage applied to adjacent passing word lines affects the data retention time and increases the number of refresh operations, thereby contributing to higher power consumption in DRAM. In this paper, we identify the causes of the passing word line effect through TCAD Simulation. As a result, we confirm the DRAM operational conditions under which the passing word line effect occurs, and observe that this effect alters the proportion of the total leakage current attributable to different causes. Through this, we recognize the necessity to consider not only leakage currents due to GIDL(Gate Induced Drain Leakage) but also sub-threshold leakage currents, providing guidance for improving DRAM structure.

• KIEAE Journal
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• v.3 no.3
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• pp.43-50
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• 2003

Nowdays the apartment is a main type of modernized residential buildings. According to the improvement of construction techniques and functions of windows and doors, recent apartments are enhanced air tightness of windows, doors and building envelopes. As Infiltration is decreased and natural ventilation is reduced, energy could be saved in winter. However, indoor air quality is bad. The air Infiltration of a building could be enlarged by physical actions, such as building designs, constructions and reduction of air tightness which is caused by aging. This research analyzes and measures with KNS-4000P (Sapporo air tightness measurement) the air tightness of the high rise apartments which is recently constructed and not occupied yet. With depressurization method, the KNS-4000 installed on the window and the indoor air-leakage was measured. At that time, Air come out from the edge of the windows and doors because of the pressure differences between indoor and outdoor. We measure the amount of the air as effective air leakage areas. This method of depressurization takes less time to measure than other methods and is less affected from other conditions. We measured infiltration of total 56 household, 29 households S apartment (total floor area : $64.42m^2$) in Balan and 29 households D apartment(total floor area : $78.21m^2$) in Chonan. As a result of the field measurements at October 2003, normalized leakage area of D apartment in Cheonan was $2.05cm^2/m^2{\sim}3.49cm^2/m^2$ (average: $2.77cm^2/m^2$) and normalized leakage area of S apartment in Balan is $1.23cm^2/m^2{\sim}1.68cm^2/m^2$ (average: $1.5cm^2/m^2$).

• Journal of the Korean Wood Science and Technology
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• v.45 no.2
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• pp.147-158
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• 2017

Among the energy consumption in building, the heating energy takes the largest part. Therefore, it is important to minimize the heat energy loss in building for the reduction of overall energy use in construction. The most important points for the minimization of energy loss in building are insulation and airtightness. Especially, in wood houses, airtightness is very important for energy saving as well as increase of durability. However, the researches on airtightness of wood buildings have been started recently and are very deficient especially in Korea. In this study, air leakage properties and airtightness performance were evaluated for light-frame wood houses built in Daejeon and Chungnam area. Total 7 houses were evaluated, among which four houses (Case 1 to Case 4) were in the construction stage before interior finish and the other three houses (Case 5 to Case 7) were after completion of construction work. The tests for airtightness were conducted by pressurization-depressurization method, and the factors included in the measurements includes air leakage rate at 50 Pa (CMH50), air change rate at 50 Pa (ACH50), equivalent leakage area (EqLA) and EqLA per floor area. As a result of this study, key air leakage points in wood houses were found to be the gaps between floor and wall, the holes for wiring and plumbing, the double glasses windows and the entrance doors. The average value of ACH50 for the houses after completion of construction work was $3.5h^{-1}$ that was similar to Europe standard ($3.0h^{-1}$). ACH50 was proportional to EqLA per floor area but inversely proportional to the internal volume, the net floor area and the area of window.

• Journal of the Korea Institute of Building Construction
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• v.22 no.2
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• pp.125-136
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• 2022

This research is to reduce the formwork leakage of high-fluidity concrete caused by insufficient accuracy of formwork fabrication widely used for high-fluidity concrete to general strength concrete. However, in the actual construction site, because of the insufficient accuracy of formwork fabrication may cause leaking concrete of mortar through a gab of the formwork. Therefore, in this research, which builds on previous research into providing thixotropy with PVA and Borax, the use of thixotropy to reduce high-fluidity mortar leakage was evaluated. The results of the experiment proved that the use of thixotropy with PVA and Borax can contribute to reduction of the formwork leakage of high-fluidity mortar. This finding is expected to lead to further research on reducing leakage of high-fluidity concrete.

• Journal of the Korean Geotechnical Society
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• v.22 no.11
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• pp.13-23
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• 2006

The sinkhole and leakage in dam core were detected at one of earth fill dams in Korea. The damage areas in the core of the dam were repaired by compaction grouting method. This study is to evaluate compaction grouting activity by in-situ and laboratory experiments before, during and after the remedial work. The intensive site investigation and geophysical survey were conducted during and after the compaction grouting work. The compaction grouting work was carried out for the damaged dam core between June 16 and August 24, 2000. The leakage reduction generally occurred in the core of the dam after the remedial work. The use of compaction grouting was considered the proper countermeasures for repairing the damaged dam. It shows that the loose or voided zones have been properly filled and the leakage has been reduced by about 96% of that before the treatment of the remedial work performed at dam core by compaction grouting.

• Journal of IKEEE
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• v.11 no.4
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• pp.152-157
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• 2007

AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated and the effect of ${N_2}O$ plasma on the electrical characteristics of the devices was investigated. The HEMT exposed to ${N_2}O$ plasma formed by 40 W of RF power in a chamber with pressure of 20 mTorr at a temperature of $200^{\circ}C$, exhibited a reduction of gate leakage current from 246 nA to 1.2 pA by 10 seconds treatment. The current between the two isolated active regions reduced from 3 uA to 7 nA and the sheet resistance of the active layer was lowered also. The variations of electrical characteristics for HEMT were occurred within a short time expose of 10 seconds and the successive expose did not influence on the improvements of gate leakage characteristics and conductivity of the active region. The reduced leakage current level was not varied by successive $SiO_2$ deposition and its removal. The transconductnace and drain current of AlGaN/GaN HEMTs were increased also by the expose to the ${N_2}O$ plasma.