• 전기학회논문지
• /
• 제56권4호
• /
• pp.645-650
• /
• 2007

This paper proposes a parameter estimation technique of a power transformer. Based on the combined equation, it estimates separately the primary and secondary leakage inductances using the least square method from the instantaneous voltages and currents in the steady state. The performance of the proposed technique was investigated by varying the cut-off frequency of the filter and the number of samples per cycle. The estimated values are obtained based on the average value for 41 cycle.

• 한국조명전기설비학회:학술대회논문집
• /
• 한국조명전기설비학회 2007년도 춘계학술대회 논문집
• /
• pp.353-356
• /
• 2007

This paper presents the thermal and electrical characteristics of ZnO arrester blocks under the AC voltages. The leakage currents of ZnO arrester blocks were measured as a function of time. The temperature distributions of ZnO arrester blocks were observed by the forward looking infrared camera The degradation and thermal runaway of ZnO arrester blocks were closely related with the temperature limit of ZnO arrester blocks which decided heat generation and dissipation As a result, the degradation and thermal runaway of ZnO arrester blocks depend on the temperature and leakage current of ZnO arrester blocks.

• 전자공학회논문지A
• /
• 제30A권8호
• /
• pp.34-41
• /
• 1993

Effect of high temperature annealing conditions on Ta$_{2}O_{5}$ thin films was investigated. Ta$_{2}O_{5}$ thin films were deposited on P-type silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using tantalum ethylate. Ta(C$_{2}H_{5}O)_{5}$, and nitrous oxide. N$_{2}$O. The microstructure changed from amorphous to polycrystalline above 700.deg. C annealing temperature. The refractive index, dielectric onstant and leakage current of the film increased as annealing temperature increased. However, annealing in oxygen ambient reduced leakage currents and dielectric constant due to the formation of interfacial SiO$_{2}$ layer. By optimizing annealing temperature and ambient, leakage current lower than 10$^{-8}$ A/cm$^{2}$ and maximum capacitance of 9 fF/${\mu}m^{2}$ could be obtained.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제9권3호
• /
• pp.148-152
• /
• 2009

Recent CMOS technology scaling has seriously eroded the bit-line noise immunity of register files due to the consequent increase in active bit-line leakage currents. To restore its noise immunity while maintaining performance, we propose and evaluate a $256{\times}40$-bit register file incorporating dual-$V_t$ bit-lines with a boosted gate overdrive voltage in 65 nm bulk CMOS technology. Simulation results show that the proposed bootsrapping scheme lowers leakage current by a factor of 450 without its performance penalty.

• 반도체디스플레이기술학회지
• /
• 제5권1호
• /
• pp.51-55
• /
• 2006

MgO thin films were prepared through electron-beam deposition onto ITO-coated glass substrates in order to measure electrical, dielectric, and microstructural properties. Design of experiments was performed in this study with the aim to understanding of the effects of processing variables, e.g., substrate temperature and filament current of an e-beam evaporator statistically. Leakage currents, relative dielectric constants, and diffraction intensities of MgO thin films were analyzed statistically, following the analysis procedure provided in the design of experiments. The leakage current level of MgO thin films has been found to be statistically significant at the level of $\alpha=0.1$.

• 반도체디스플레이기술학회지
• /
• 제17권2호
• /
• pp.32-35
• /
• 2018

The current voltage characteristics of ZTO/SiOC were researched, and the conductivities of the ZTO films as a channel material were analyzed. The current of SiOC was abruptly decreased near 0V, and then the depletion layer was formed by the disappearance of charges in the region form -12V to +12V. SiOC with Schottky contacts near ${\sim}10^{-9}$ A had the cutoff effect of leakage currents. The conductivity of ZTOs prepared on SiOC was improved in the cutoff region of the leakage current of -12V

• 한국철도학회논문집
• /
• 제12권5호
• /
• pp.687-693
• /
• 2009

급전시뮬레이션과 함께 수행될 수 있는 '레일 전위 상승 분석을 위한 컴퓨터 알고리즘'이 제안되었다. 본 알고리즘에서 레일전위상승 분석은 2 단계로 진행된다. 첫 단계에서는 급전시스템의 조류해석을 수행하여 차량 및 변전소에서의 인젝션(injection) 전류를 구한다. 두 번째 단계에서는 급전시스템의 등가회로에서 변전소 및 차량을 전류 소스로 대치하고 레일의 대지로의 누설 저항이 삽입된 등가회로를 다시 구성한다. 새로 구성된 등가회로를 해석하여 변전소 및 차량 위치에서의 레일 전위를 구한다. 알고리즘의 타당성을 분석하기 위하여 컴퓨터 프로그램을 작성하여 레일전위상승을 구하였고 동일한 시스템을 대상으로 MatLab 사의 Simulink/SymPowerSystems 소프트웨어를 이용하여 레일전위를 구하였다. 2가지 방법에 의한 결과를 상호 비교 분석한 결과는 그 오차가 허용범위 내에 있음을 보여주었다. 본 알고리즘은 급전시뮬레이션과 연동하여 수행될 수 있는 장점을 가지고 있다.

• Transactions on Electrical and Electronic Materials
• /
• 제18권3호
• /
• pp.125-128
• /
• 2017

This study is on how ohmic area etching affects the buffer breakdown voltage of AlGaN/GaN HEMT. The surface morphology of the ohmic metal can be improved by whole etching on the ohmic area. The buffer breakdown voltages of the samples with whole etching on the ohmic area were improved by the suppression of the metal spikes formed under the ohmic contact regions during high-temperature annealing. The samples with selective etching on the ohmic area were investigated for comparison. In addition, the buffer leakage currents were measured on the different radii of the wafer, and the uniformity of the buffer leakage currents on the wafer were investigated by PL mapping measurement.

• 반도체디스플레이기술학회지
• /
• 제18권1호
• /
• pp.32-37
• /
• 2019

Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.

• 전자공학회논문지 IE
• /
• 제49권2호
• /
• pp.52-57
• /
• 2012

사회발전과 더불어 가전기기의 발전은 누전으로 인한 감전, 화재 등 여러 가지 누전전류의 위험성에 노출되어 있다. 가정 내 배전함에 누전차단기가 설치되어 있지만, 기존의 누전차단기는 배전함에 설치되어 누전시 전원을 차단해주는 기능만을 갖는다. 또한 집안 벽마다 설치된 콘센트에 연결된 가전기기들을 개별적으로 점검하는 일은 쉬운 일이 아니다. 따라서 본 논문에서는 누전차단기회로의 성능 및 회로를 분석하고, ZigBee기반의 센서를 이용하여 가정 내 가전기기들의 누전상태를 모니터링 할 수 있는 방법에 대해 제시하였다. 성능분석 결과, 제안된 ELB 누전전류 제어시스템은 가전기기에 내장된 누전차단기 회로를 응용했기 때문에 각각의 가전기기들의 누전상태를 확인할 수 있어 기존 시스템 보다 누전을 쉽고 편리하게 모니터링 할 수 있을 것이라 기대한다.