• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.10
• /
• pp.35-41
• /
• 1992

Ultra-thin silicon nitride films were fabricated with ECR(Electron cyclotron Resonance) nitrogen plasma at room temperature. Film thickness was about 50$\AA$ after nitridation for 1min at microwave power of 1000W, RF power of 500W, and NS12T pressure of ${\times}10^{-3}$ torr. 50$\AA$ fo nitride film was grown within 1 min and no appreciable growth occured thereafter. Dielectric breakdown strength and leakage current density in Al/SiN/Si structure were measured to be about 7-11 MV/cm and ${\times}10^{-10}~5{\times}10^{-10}A/cm^{2}$, respectively. Observed linear relationship in 1n(J/E)-vs-E$^{1/2}$ and no polarity-dependence of the leakage current indicated that the Poole-Frenkel emission is mainly responsible for the conduction in this nitrided silicon films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.747-750
• /
• 2003

The microstructure and nonlinear properties of ZPCMR-based varistors were investigated with various additives. The density of varistors were gradually decreased for the same R in order of NiO, MgO, and $Cr_2O_3$, respectively. The ZPCR-based varistors were not affected by NiO and MgO additives in nonlinear properties, whereas greatly affected by $Cr_2O_3$. Among the ZPCCR-based varistors, ZPCCD varistor exhibited the highest nonlinear properties, in which the nonlinear exponent is in the range of $40.5{\sim}67.4$ and the leakage current is in the range of $1.2{\sim}2.7{\mu}A$.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.1
• /
• pp.24-29
• /
• 2001

PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.

• Journal of information and communication convergence engineering
• /
• v.1 no.2
• /
• pp.70-73
• /
• 2003

We have studied the effects of solvents and additives in the precursor solutions on the characteristics of barium strontium titanate (BST) thin films. The solution having two solvents, ie. acetic acid for barium acetate and strontium acetate and 2-methoxyethanol for titanium isopropoxide and also having an additive of ethylene glycol shows good stability and remains homogeneous even after a month of ageing. It produces excellent BST thin film without cracks. Dielectric constant, loss tangent at 10KHz and leakage current density at 3V of the BST (70/30) thin film made from this solution are 339, 0.052 and 13.3 ${\mu}\textrm{A}$/$\texmrm{cm}^2$, respectively.

• Journal of the Semiconductor & Display Technology
• /
• v.17 no.4
• /
• pp.27-31
• /
• 2018

The effect of $NH_3$ plasma passivation on the chemical and electrical characteristics of ALD HfAlO dielectric on the InGaAs substrate was investigated. The results show that $NH_3$ plasma passivation exhibit better electrical & chemical performance such as much lower leakage current, lower density of interface trap(Dit) level, and low unstable interfacial oxide. $NH_3$ plasma passivation can effectively enhance interfacial characteristics. Therefore $NH_3$ plasma passivation improved the HfAlO dielectric performance on the InGaAs substrate.

• Progress in Superconductivity
• /
• v.4 no.1
• /
• pp.59-63
• /
• 2002

10-V Josephson junction array arranged in 8 parallel stripline paths was fabricated using self-aligning and reactive ion etching techniques. These techniques were introduced in detail with aim of obtaining high-quality junctions. The array has 18,184 Josephson junctions with the area of $12\mu\textrm{m}$$\times$$38\mu\textrm{m}$. The gap voltage and minimum critical current density were about 2.7 ㎷ and ／$23 A\textrm{cm}^2$, respectively. And the critical current density and leakage current at 5 volt were about 27 $A／\textrm{cm}^2$ and $5\mu\textrm{A}$, respectively When operated in the frequency range of 76-88 ㎓, the away generated constant voltage steps up to 14-19 V. The step size near 10-V was more than 7 $\mu\textrm{A}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.450-453
• /
• 1999

In this paper, The relationship between device performance and channel length(1.5-50$\mu$m) in polysilicon thin-film transistors fabricated by SPC technology was Investigated by measuring electric Properties such as 1-V characteristics, field effect mobility, threshold voltage, subthreshold swing, and trap density in grain boundary with channel length. The drain current at ON-state increases with decreasing channel length due to increase of the drain field, while OFF-state current (leakage current) is independent of channel length. The field effect mobility decrease with channel length due to decreasing carrier life time by the avalanche injection of the carrier at high drain field. The threshold voltage and subthreshold swing decrease with channel length, and then increase in 1.5 $\mu$m increase of increase of trap density in grain boundary by impact ionization.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1651-1653
• /
• 1999

Room Temperature Vulcanizing (RTV) Silicone Rubber has been widely used to coat porcelain insulator to prevent formation water filming on insulator surface. and RTV silicone rubber has water repellency to suppress leakage current and consequent flashover. RTV silicone rubber's surface has been degradated by outdoor condition such as dust, salt, and water. etc. ESDD(Equivalent Salt Deposit Density) and leakage currents are increased by polymer surface toughness and degradation. In this paper, we investigated relations of surface toughness, ESDD, and leakage currents.

• Korean Journal of Materials Research
• /
• v.4 no.4
• /
• pp.453-458
• /
• 1994

$(Ba_{0.5}Sr_{0.5)/TiO_3$(BST) thin films were prepared for the application of 256 Mb DRAM by RF magnetron sputtering. The crystallinity of BST thin films increased with increasing deposition tempera lure. The composition of thin films was $(Ba_{0.48}Sr_{0.48)/TiO_{2.93}$ Pt/Ti barrier layer suppressed the diffusion of Si into BST layer. The films showed a dielectric constant of 320 and a dissipation factor of 0.022 at 100 kHz. the change of capacitance of the films with applied voltage was small, showing paraelectric property. The charge storage density and leakage current density were 40fC/$\mu \textrm{m}^{2}$ and 0.8$\mu A/\textrm{cm}^2$, respectively at a field of 0.15 MV/cm. The BST films obtained by RF magnetron sputtering appeared to be potential thin film capacitors for 256 Mb DRAM application.

• Korean Journal of Materials Research
• /
• v.5 no.7
• /
• pp.816-819
• /
• 1995

(Ba$_{1-x}$ , Sr$_{x}$)TiO/$_3$thin films on Pt/Ti/SiO$_2$/Si substrates were prepared by LP MOCVD(Low Pressure Metal-Organic Chemical Vapor Deposition). The crystalinity of BST deposit had a (100) preferred orientation with increasing deposition temperature due to surface diffusion. BST films deposited at 90$0^{\circ}C$ showed a dielectric constant of 365 and a dissipation factor of 0.052 at a frequency of 100kHz. The chance of capacitance of the films with applied voltage was small, showing paraelectric properties. BST film deposited at 90$0^{\circ}C$ had a charge storage density of 60 fc/${\mu}{\textrm}{m}$$^2$at a field of 0.2MV/cm and the leakage current density of 20 nA/$\textrm{cm}^2$ at a field of 0.15 MV/cm.cm.