Preparation and Electrical Properties of $(Ba_{1-x},\;Sr_x)TiO_3$ Thin Film by Metal-Organic Chemical Vapor Deposition

유기 금속 화학 증착법에 의한 $(Ba_{1-x},\;Sr_x)TiO_3$ 박막의 제조 및 전기적 특성

  • Yun, Jong-Guk (Dept. of Materials Engineering, Chungnam National University) ;
  • Yun, Sun-Gil (Dept. of Materials Engineering, Chungnam National University)
  • Published : 1995.10.01

Abstract

(Ba$_{1-x}$ , Sr$_{x}$)TiO/$_3$thin films on Pt/Ti/SiO$_2$/Si substrates were prepared by LP MOCVD(Low Pressure Metal-Organic Chemical Vapor Deposition). The crystalinity of BST deposit had a (100) preferred orientation with increasing deposition temperature due to surface diffusion. BST films deposited at 90$0^{\circ}C$ showed a dielectric constant of 365 and a dissipation factor of 0.052 at a frequency of 100kHz. The chance of capacitance of the films with applied voltage was small, showing paraelectric properties. BST film deposited at 90$0^{\circ}C$ had a charge storage density of 60 fc/${\mu}{\textrm}{m}$$^2$at a field of 0.2MV/cm and the leakage current density of 20 nA/$\textrm{cm}^2$ at a field of 0.15 MV/cm.cm.

저압 유기금속 화학 증탁법에 의하여 Pt/Ti/SiO$_2$/Si 기판위에 (Ba$_{1-x}$ , Sr$_{x}$)TiO/$_3$박막이 제조 되었다. 제조된 BST 박막의 결정화도는 증착온도가 증가함에 따라 (100)방향으로 우선 성장하였다. 90$0^{\circ}C$에서 증착한 BST 박막은 100kHz의 주파수에서 유전상수가 365, 유전손실이 0.052를 나타내었다. 인가전계에 따라 축전용량의 변화가 작은 상유전 특성을 보였으며 0.2MV/cm인가 전계에서 축적 전하 밀도(charge storage density)는 60fC/$\mu\textrm{m}$$^2$을, 0.15MV/cm인가 전계 영역에서 누설 전류밀도(leakage current density)는 20nA/$\textrm{cm}^2$을 나타냈다.냈다.

Keywords

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