• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.9 s.240
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• pp.1169-1174
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• 2005

Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. In particular, ultraviolet-nanoimprint lithography (UV-NIL) is applicable to large area imprint easily. We have proposed a new UV-NIL process using an elementwise patterned stamp (EPS), which consists of a number of elements, each of which is separated by channel. Experiments on UV-NIL are performed on an EVG620-NIL using the EPS with 3mm channel width. The replication of uniform sub 70 nm lines using the EPS is demonstrated. We investigate the nonuniformity of residual layer caused by wafer deformation in experiment with varying wafer thickness. Severely deformed wafer works as an obstacle in spreading of dropped resin, which causes nonuniformity of thickness of residual layer. Numerical simulations are conducted to analyze aforementioned phenomenon. Wafer deformation in the process is simulated by using a simplified model, which is a good agreement with experiments.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.229.2-229.2
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• 2014

Graphene, an allotrope of carbon, is a two-dimensional material having a unique electro-mechanical property that shows significant change of the electrical conductance under the applied strain. In addition of the extraordinary mechanical strength [1], graphene becomes a prospective candidate for pressure sensor technology [2]. However, very few investigations have been carried out to demonstrate characteristics of graphene sensor as a device form. In this study, we demonstrate a pressure sensor using graphene double layer as an active channel to generate electrical signal as the response of the applied vertical pressure. For formation of the active channel in the pressure sensor, two single graphene layers which are grown on Cu foil (25 um thickness) by the plasma enhanced chemical vapor deposition (PECVD) are sequentially transformed to the poly-di-methyl-siloxane (PDMS) substrate. Dry and wet transfer methods are individually employed for formation of the double layer graphene. This sensor geometry results a switching characteristic which shows ~900% conductivity change in response to the application of pulsed pressure of 5 kPa whose on and off duration is 3 sec. Additionally, the functional reliability of the sensor confirms consistent behavior with a 200-cycle test.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.11B
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• pp.981-988
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• 2008

In this paper, the efficient AODV routing algorithm in MANET is proposed. Because transmission channel has a high error rate and loss in MANET, the number of hops can't be regarded as an absolute network metric. After measuring FER periodically at the data link layer using cross-layer design, the scheme that every node forwards the weight of link status in the reserved field of AODV protocol is used. In order to find the efficient route, we design AODV to be able to select an optimal route that has a good channel status by evaluating the sum of weight. The proposed AODV improves throughput, routing overhead and average end-to-end delay in comparison with the generic AODV.

• Nuclear Engineering and Technology
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• v.47 no.3
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• pp.267-283
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• 2015

The main objective of this study is to investigate experimentally the two-phase flow characteristics in terms of the direct contact condensation of a steam-water stratified flow in a horizontal rectangular channel. Experiments were performed for both air-water and steam-water flows with a cocurrent flow configuration. This work presents the local temperature and velocity distributions in a water layer as well as the interfacial characteristics of both condensing and noncondensing fluid flows. The gas superficial velocity varied from 1.2 m/s to 2.0 m/s for air and from 1.2 m/s to 2.8 m/s for steam under a fixed inlet water superficial velocity of 0.025 m/s. Some advanced measurement methods have been applied to measure the local characteristics of the water layer thickness, temperature, and velocity fields in a horizontal stratified flow. The instantaneous velocity and temperature fields inside the water layer were measured using laser-induced fluorescence and particle image velocimetry, respectively. In addition, the water layer thickness was measured through an ultrasonic method.

• Ocean and Polar Research
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• v.21 no.2
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• pp.99-108
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• 1999

With sectional data obtained in September of 1987, 1988 and 1989 by quadrireciprocal ADCP measurement and CTD cast, the current structure, volume transport and vorticity in the Western Channel of the Korea Strait were studied. The characteristics of Tsushima Current water persisted throughout the summer especially in the homogeneous water of temperature $14-16^{\circ}C$ located at the depth of 50-100m below seasonal termocline. Thickness and velocity of the homogeneous layer are about 10-170m and 20-60cm/s. and the relative vorticity for this layer is shown to be nearly constant and it is smaller than the planetary vorticity. Potential vorticity of $2.70-7.10{\times}10^{-6}m^{-1}s^{-1}$ is found to be dependent mainly on planetary rather than on the relative vorticities. The Tsushima Current water represented by the homogeneous layer R14-16^{\circ}C$ may keep the potential vorticity at the area of strong current in the Strait. The ADCP current structure is similar to geostrophic current and the core of the current with the speed of 30-50cm/s is situated in the middle layer over the deep trough. With large tidal fluctuation the volume transport has mean value of 1.17sv which was about 40% larger than that of geostrophic calculation.

• Proceedings of the Korea Information Processing Society Conference
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• 2004.05a
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• pp.157-160
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• 2004

본 논문은 미국 차세대 디지털 케이블 방송 표준 규격인 오픈케이블($OpenCable^{TM}$)의 수신제한 모듈인 CableCard의 Physical Layer를 SystemC의 TLM(Transaction Level Modeling)과 RTL(Register-Transfer Level) 모델링 기법으로 설계하였다. 본 논문에서 설계한 CableCard의 Physical Layer는 PCMCIA Interface, Command Inteface 그리고 MPEG-2 TS Interface 로 구성된다. CableCard가 전원이 인가될 때, 카드 초기화를 위하여 동작하는 PCMCIA 인터페이스는 16 비트 PC 카드 SRAM 타입으로 2MByte Memory와 100ns access time으로 동작할 수 있게 설계하였다. PCMCIA 카드 초기화 동작이 완료된 후, CableCard의 기능을 수행하기 위하여 두 개의 논리적 인터페이스가 정의되는데 하나는 MPEG-2 TS 인터페이스이고, 다른 하나는 호스트(셋톱박스)와 모듈 사이의 명령어들을 전달하는 명령어 인터페이스(Command Interface)이다. 명령어 인터페이스(Command Interface)는 셋톱박스의 CPU와 통신하기 위한 1KByte의 Data Channel과 OOB(Out-Of-Band) 통신을 위한 4KByte의 Extended Channel 로 구성되고, 최대 20Mbits/s까지 동작한다. 그리고 MPEG-2 TS는 100Mbits/s까지 동작을 수행할 수 있게 설계하였다. 설계한 코드를 실행한 후, Cadence사의 SimVision을 통해서 타이밍 시뮬레이션을 검증하였다.

• Korean Journal of Materials Research
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• v.18 no.5
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• pp.272-276
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• 2008

In submicron MOSFET devices, maintaining the ratio between the channel length (L) and the channel depth (D) at 3 : 1 or larger is known to be critical in preventing deleterious short-channel effects. In this study, n-type SOI-MOSFETs with a channel length of $0.1\;{\mu}m$ and a Si film thickness (channel depth) of $0.033\;{\mu}m$ (L : D = 3 : 1) were virtually fabricated using a TSUPREM-4 process simulator. To form functioning transistors on the very thin Si film, a protective layer of $0.08\;{\mu}m$-thick surface oxide was deposited prior to the source/drain ion implantation so as to dampen the speed of the incoming As ions. The p-type boron doping concentration of the Si film, in which the device channel is formed, was used as the key variable in the process simulation. The finished devices were electrically tested with a Medici device simulator. The result showed that, for a given channel doping concentration of $1.9{\sim}2.5\;{\times}\;10^{18}\;cm^{-3}$, the threshold voltage was $0.5{\sim}0.7\;V$, and the subthreshold swing was $70{\sim}80\;mV/dec$. These value ranges are all fairly reasonable and should form a 'magic region' in which SOI-MOSFETs run optimally.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.46-47
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• 1996

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.6
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• pp.583-589
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• 2011

The dielectric breakdown of bone-like materials subject to purely electric fields is investigated. In general, these materials consist of some layers with stronger dielectric strength and others with weaker dielectric strength in a parallel staggered pattern. The growth of the conductive channel is impeded during penetration of the weaker layer in the bone-like material because the electric-field concentration is relieved. The electric-field distribution around the head of the tubular channel is obtained from finite element analysis. The dielectric strength of the bone-like material is evaluated using the J integral, and some parameters affecting the dielectric strength are determined. It is shown that the J-integral values are reduced with an increase in the breakdown area in the weaker layer. It is also found that the ratio of the permittivity of the weaker layer to that of the stronger layer can strongly affect the dielectric breakdown.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.127-127
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• 2011

We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.