• Korean Journal of Metals and Materials
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• v.46 no.7
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• pp.412-419
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• 2008

Creep behavior of the squeeze infiltrated AS52 Mg matrix composites reinforced with 15 vol% of aluminum borate whiskers($Al_{18}B_4O_{33}w$) fabricated squeeze infiltration method was investigated. Microstructure of the composites was observed as uniformly distributed reinforcement in the matrix without any particular defects of casting pores etc.. Creep test was carried out at the temperature of 150 and $200^{\circ}C$ under the applied stress range of 60~120 MPa. The creep resistance of the composite was significantly improved comparing with the unreinforced AS52 Mg alloy. The creep behavior of composites might be interpreted with the substructure invariant model successfully for the composite. Threshold stress of the composite exist for the creep deformation of the composite. The analysis of the creep behavior of the composite with threshold stress indicated that creep deformation was controlled by the lattice diffusion process of AS52 Mg matrix at given effective stresses and temperatures. Activation energy was also calculated to check lattice diffusion controlled creep behavior of the composite.

• Bulletin of the Korean Chemical Society
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• v.26 no.11
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• pp.1723-1727
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• 2005

A generalized fractional diffusion equation (FDE) is presented, which describes the time-evolution of the spatial distribution of a particle performing continuous time random walk (CTRW) on a fractal lattice. For a case corresponding to the CTRW with waiting time distribution that behaves as $\psi(t) \sim (t) ^{-(\alpha+1)}$, the FDE is solved to give analytic expressions for the Green’s function and the mean squared displacement (MSD). In agreement with the previous work of Blumen et al. [Phys. Rev. Lett. 1984, 53, 1301], the time-dependence of MSD is found to be given as < $r^2(t)$ > ~ $t ^{2\alpha/dw}$, where $d_w$ is the walk dimension of the given fractal. A Monte-Carlo simulation is also performed to evaluate the range of applicability of the proposed FDE.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.37-42
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• 2012

Mass transport near grain boundary in a magnetite bi-crystal has been estimated at 823 K by finite element method. Mass transport near grain boundary strongly depends on the diffusivities along grain boundary. If grain boundary diffusion has the same oxygen activity dependence as lattice diffusion, there is no mass transport between grains and grain boundary. On the other hand, mass transport between grains and grain boundary is observed in the case that grain boundary diffusion has different oxygen activity dependence.

• Journal of Powder Materials
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• v.7 no.3
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• pp.137-142
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• 2000

In order to analyze the densification behaviour of stainless steel powder compacts during hot isostatic pressing (HIP) at elevated temperatures, a power-law creep constitutive model based on the plastic deformation theory for porous materials was applied to the densification. Various densification mechanisms including interparticle boundary diffusion, grain boundary diffusion and lattice diffusion mechanisms were incorporated in the constitutive model, as well. The power-law creep model in conjunction with various diffusion models was applied to the HIP process of 316L stainless steel powder compacts under 50 and 100 MPa at $1125^{\circ}C$. The results of the calculations were verified using literature data. It could be found that the contribution of the diffusional mechanisms is not significant under the current process conditions.

• Bulletin of the Korean Chemical Society
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• v.17 no.2
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• pp.192-198
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• 1996

We present a theoretical formulation of diffusion process on solid surface based on multidimensional transition state theory (TST). Surface diffusion of single adatom results from hopping processes on corrugated potential surface and is affected by surface vibrations of surface atoms. The rate of rare events such as hopping between lattice sites can be calculated by transition state theory. In order to include the interactions of the adatom with surface vibrations, it is assumed that the coordinates of adatom are coupled to the bath of harmonic oscillators whose frequencies are those of surface phonon modes. When nearest neighbor surface atoms are considered, we can construct Hamiltonians which contain terms for interactions of adatom with surface vibrations for the well minimum and the saddle point configurations, respectively. The escape rate constants, thus the surface diffusion parameters, are obtained by normal mode analysis of the force constant matrix based on the Hamiltonian. The analysis is applied to the diffusion coefficients of W, Ir, Pt and Ta atoms on the bcc(110) plane of W in the zero-coverage limit. The results of the calculations are encouraging considering the limitations of the model considered in the study.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.816-819
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• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• ETRI Journal
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• v.11 no.4
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• pp.84-97
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• 1989

The influence of Zn, Si and Te diffusion on the interdiffusion in $GaAs-Ga_1_-xIN_xAs_1__yP_y$and InP$Ga_1__xIn_xAs_1__yP_y$ heterostructures was studied. The heterostructures were grown by liquid phase epitaxy, and the impurity diffusion into the heterostructures was carried out using metal compound or element sources. The extent of interdiffusion for both group III and V atoms was observed by depth profiling of matrix elements with secondary ion mass spectrometry and Auger electron spectroscopy. Selective enhancement of cation interdiffusion was observed by the concurrent Zn diffusion in both the GaAs based-and InP based-crystals. In contrast to the Zn diffusion, the Si diffusion in the GaAs based-crystal and the Te diffusion in the InP based-crystal enhanced both cation and anion interdiffusion to the same extent. A kick-out mechanism is proposed to explain the selective enhancement of the cation interdiffusion due to Zn, and a single vacancy mechanism is proposed for the interdiffusion due to Si and Te.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.879-884
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• 2001

In this paper, the structural and dielectric properties of (Sr$_{l-x}$Ca$_{x}$)TiO$_3$ (0$\leq$x$\leq$0.2) -based grain boundary layer ceramics were investigated by XRD, SEM and HP4194A. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1420~152$0^{\circ}C$ and 4 hours, respectively. The average grain size and the lattice constant were decreased with increasing content of Ca. The average grain size was increased with increase of sintering temperature. The relative density of all specimens was 96~98%. The 2nd Phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan $\delta$<0.05, $\Delta$C<$\pm$10%. The appropriate Ca content was under 15 ㏖%.s under 15 ㏖%.%.

• Bulletin of the Korean Chemical Society
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• v.17 no.8
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• pp.700-706
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• 1996

We present the results of molecular dynamics simulations of monolayers of long-chain alkyl thiol [S(CH2)15CH3] molecules on an air-solid interface using the extended collapsed atom model for the chain-molecule and a gold surface for the solid surface. Several molecular dynamics simulations have been performed on monolayers with areas per molecule ranging from 18.30 to 32.10 Å2/molecule. It is found that there exist three possible transitions: a continuous transition characterized by a change in molecular configuration without change in lattice structure, a sudden transition characterized by the distinct lattice defects and perfect islands, and a third transition characterized by the appearance of a random, liquid-like state. The analysis of probability distributions of the segments shows that the structure of the chain-molecules at the air-solid interface is completely different from that at the air-water interface in the view of the degree of overlap of the probability distributions of the neighbor segments. The calculated diffusion coefficients of the chain-molecules on the monolayers seem to be not directly related to any one of the three transitions. However, the large diffusion of the molecules enhanced by the increment of the area per molecule may induce the second transition.

• Tribology and Lubricants
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• v.28 no.2
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• pp.56-61
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• 2012

In order to investigate the possibility of Ni-Al based intermetallics coating onto aluminum substrate, the coating process for induction heating has been evaluated by microscopically analyzing the intermetallic layers coated at temperatures lower than the melting temperature of aluminum. The coating layers were divided into two parts with different microstructure along the depth. Hard $NiAl_3$ layer was found at lower parts of the coatings near the interface with aluminum substrate. This layer was formed by the diffusion of aluminum atoms from the substrate into the coating layer across the interface during the induction heating. Meanwhile, at the upper parts of the coating near the surface, a large amount of un-reacted Ni was still remained and surrounded by several Ni-Al based intermetallic compounds, such as $Ni_3Al$, NiAl and $Ni_2Al_3$ formed by the lattice diffusion.