• 반도체디스플레이기술학회지
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• 제10권4호
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• pp.131-138
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• 2011

We fabricated distributed feedback InGaAsP/InP laser diodes for optical fiber communication module and characterized the lasing properties in continuous wave operation. The active layer of 7-period InGaAsP(1.127 eV)/InGaAsP(0.954 eV) multi-quantum well structure was grown by the metal-organic chemical vapor deposition. The grating for waveguide was also fabricated by the implementation of the Mach-Zehender holographic method of two laser beams interference of He- Cd laser and the fabricated laser diode has the dimension of the laser length of $400{\mu}m$ and the ridge width of $1.2{\mu}m$. The laser diode shows the threshold current of 3.59 mA, the threshold voltage of 1.059 V. For the room-temperature operation with the current of 13.54 mA and the voltage of 1.12 V, the peak wavelength is about 1309.70 nm and optical power is 13.254 mW.

• 전자공학회논문지A
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• 제33A권4호
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• pp.106-111
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• 1996

Schottky diodes are fabricated on laser annealed and unannealed polysilicon substrate and their electrical characteristics are studied and analyzed. Current of laser annealed devices are larger than that of unannealed devices because of grain growth, decrease of grain boundary and trap density, lowering of grain boundary barrier height, decrease of dopant segregation. At low forward bias (<0.7V), currents of unanealed devices are larger. Soft breakdown voltages of laser annealed devices are larger than that of unannealed devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 G
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• pp.2336-2338
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• 1998

This paper describes an active laser sensing device using laser diodes and optic devices. It is able to detect near targets existed in $360^{\circ}$ directions simultaneously with effectiveness and reliability. This sensing device consists of four laser transmitters and four receivers. Only four transmitter/receiver channels of this near range sensing device are capable of $360^{\circ}$ coverage. The usefulness of this sensing device is confirmed through some experiments for the mock-up targets.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제27회 학술발표회 초록집
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• pp.64-64
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• 2004

• ETRI Journal
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• 제27권4호
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• pp.405-410
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• 2005

High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

• Current Optics and Photonics
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• 제4권3호
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• pp.221-228
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• 2020

We developed an all-fiber RGB laser light source module for application in an automobile head-up display. It is based on laser diodes and an optical fiber combiner that substantially enhances the flexibility of configuration and stability against harsh working conditions for automobiles. We coupled 13 laser diodes with optical fibers and merged them into a single output with a beam combiner device. Red (R), green (G), and blue (B) laser sources were employed to produce primary colors that were mixed into a white light output. An optical output power of approximately 1.5 W was achieved, and the color balance of the output lights was assessed based on the CIE 1931 color space. The optical output power was shown to be stable for over 160 h within an optical fluctuation of less than 0.27%.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.16-20
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• 2004

We present the fabrication and performance of wavelength tunable butt coupled (BT) sampled-grating (SG) distributed bragg reflector (DBR) - planar buried heterostructure (PBH) laser diodes (LD). The fabricated LD showed the high optical output power due to the high coupling efficiency between active and passive components by the BT coupling methods. The series resistance and diode ideality factor of LD were measured to be 3.7 $\Omega$ and 1.35, respectively. The average threshold current was 25 ㎃. The output powers of BT-SG DBR-PBH-LD were obtained to be as high as 12.3 and 24.56 ㎽ at 100 and 200 ㎃, respectively. The maximum wavelength tuning range was about 31 nm and the side mode suppression ratio was about 37 dB.

• ETRI Journal
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• 제29권4호
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• pp.452-456
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• 2007

Very compact 4-channel 200-GHz-spacing external cavity lasers (ECLs) were fabricated by hybrid integration of reflection gratings and superluminescent laser diodes on a planar lightwave circuit chip. The fifth-order gratings as reflection gratings were formed using a conventional contact-mask photo-lithography process to achieve low-cost fabrication. The lasing wavelength of the fabricated ECLs matched the ITU grid with an accuracy of ${\pm}0.1$ nm, and optical powers were more than 0.4 mW at the injection current of 80 mA for all channels. The ECLs showed single mode operations with more than 30 dB side lobe suppression.

• Current Optics and Photonics
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• 제6권2호
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• pp.191-195
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• 2022

We investigate the lateral far-field pattern characteristics, including divergence angle change and far-field pattern analysis as output power increases, of narrow-emitter-width 850 nm GaAs/AlGaAs laser diodes (LDs). Each LD has a cavity of 1200 and 1500 ㎛ and narrow emitter width of 2.4 ㎛ for the top and 4.6 ㎛ for the bottom. The threshold currents are 35 and 40 mA, and L-I kinks appear at power levels of 326 and 403 mW, respectively. The divergence angle tends to increase due to the occurrence of first-order lateral mode and the thermal lensing effect. But with the L-I kink, the divergence angle decreases and the far-field pattern becomes asymmetric. This is due to coherent superposition between the fundamental and the first-order lateral mode. We provide detailed explanations for these observations based on high-power laser diode simulation results.

• Current Optics and Photonics
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• 제8권1호
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• pp.80-85
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• 2024

Numerical values of the Auger coefficient and the free carrier absorption (FCA) coefficient are extracted by applying deep neural networks (DNNs) to the L-I characteristics of 850 nm GaAs/AlGaAs laser diodes. Two elemental DNNs are used to extract each coefficient sequentially. The fidelity of the extracted values is established through meticulous correlation of L-I characteristics bridging the realms of simulations and measurements. The methodology presented in this paper offers a way to accurately extract the Auger and FCA coefficients, which were traditionally treated as fitting parameters. It is anticipated that this approach will be applicable to other types of opto-electronic devices as well.