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http://dx.doi.org/10.3807/COPP.2022.6.2.191

Lateral Far-field Characteristics of Narrow-width 850 nm High Power GaAs/AlGaAs Laser Diodes  

Yang, Jung-Tack (Department of Electrical and Electronic Engineering, Yonsei University)
Kwak, Jung-Geun (QSI Inc.)
Choi, An-Sik (QSI Inc.)
Kim, Tae-Kyung (QSI Inc.)
Choi, Woo-Young (Department of Electrical and Electronic Engineering, Yonsei University)
Publication Information
Current Optics and Photonics / v.6, no.2, 2022 , pp. 191-195 More about this Journal
Abstract
We investigate the lateral far-field pattern characteristics, including divergence angle change and far-field pattern analysis as output power increases, of narrow-emitter-width 850 nm GaAs/AlGaAs laser diodes (LDs). Each LD has a cavity of 1200 and 1500 ㎛ and narrow emitter width of 2.4 ㎛ for the top and 4.6 ㎛ for the bottom. The threshold currents are 35 and 40 mA, and L-I kinks appear at power levels of 326 and 403 mW, respectively. The divergence angle tends to increase due to the occurrence of first-order lateral mode and the thermal lensing effect. But with the L-I kink, the divergence angle decreases and the far-field pattern becomes asymmetric. This is due to coherent superposition between the fundamental and the first-order lateral mode. We provide detailed explanations for these observations based on high-power laser diode simulation results.
Keywords
Internal temperature; Kink; Lateral far-field;
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