• 소성∙가공
• /
• 제32권2호
• /
• pp.67-73
• /
• 2023

To overcome a climate change, manufacturing complex-shaped electric mobility parts becomes one of the important issues for enhancing a performance of motor with reducing their weight. Therefore, development of laser-based additive manufacturing shed on light due to their flexible manufacturing capacity that can be suitable to solve the poor formability of Fe-Si alloys for electric mobility parts. Although there are several studies existed to optimize the performance of additively manufactured Fe-Si alloys, the post-annealing effect was not well investigated yet though this is important to control the texture and mechanical properties of additively manufactured parts. In the present work, annealing effect on the mechanical property and microstructure of additively manufactured Fe-4.5Si alloy was investigated. Because of the ordered phase initiation after annealing, the hardness of additively manufactured Fe-4.5Si alloy increased up to 1173 K while a hardness drop occurs at the 1273 K condition due to the micro-crack initiation. The response surface methodology result represents the 1173 K-5 h sample is an optimal condition to maximize the mechanical property of additively manufactured alloy without micro-cracks.

• 소성∙가공
• /
• 제13권3호
• /
• pp.205-210
• /
• 2004

The waveguide Bragg gratings have been fabricated by the phase-mask method. An excimer laser with maximum 600mJ output pulse energy and uniform phase masks have been used. Hydrogen loading is often used for enhancing the uv photosensitivity of the core, however, the resultant gratings show significant aging effect. In the present study, high temperature thermal annealing process has been investigated to obtain thermal gratings and process parameters are deduced.

• 한국자기학회지
• /
• 제21권3호
• /
• pp.93-98
• /
• 2011

Laser Molecular-Beam Epitaxy 방법을 사용하여 $La_{0.35}Pr_{0.35}Ca_{0.3}MnO_3$(LPCMO)/$LaAlO_3$(LAO) 초격자를 성공적으로 증착하였으며 이의 열처리 전후 결정학적, 자기적 특성을 LPCMO 단층박막, 그리고 LPCMO/$SrTiO_3$(STO) 초격자와 비교 분석하였다. LPCMO 단층박막, 그리고 LPCMO/STO 초격자 단층박막의 경우, 표면이 열처리 전후 모두 거친 양상을 보인 것과는 달리 LPCMO/LAO 초격자 박막은 열처리 전후 모두 상대적으로 매우 매끈하였다. 열처리 후 단층박막, 초격자 박막 시료 모두 강자성 특성이 향상되었으며 특히 초격자의 경우에는 이러한 현상이 두드러졌다. 열처리 후에 보자력과 포화자기장이 감소하는 LPCMO 단층박막과는 달리 LPCMO/LAO 초격자의 경우, 열처리 후에도 보자력은 열처리 전과 같은 값을 보였으며 단층박막과는 반대로 포화자기장은 오히려 증가하였다. 이러한 자기적 특성은 절연체 사이에 강자성체가 끼여 있는 초격자라는 결정구조에서 기인하는 것으로 이해된다.

• 한국세라믹학회지
• /
• 제43권3호
• /
• pp.185-192
• /
• 2006

The effects of annealing on structural and electrical properties of ITO/PES (Indium Tin Oxide/Polyethersulfone) films was investigated. Amorphous ITO thin films were grown on plastic substrates, PES using low temperature DC magnetron sputtering. Various post annealing techniques were attempted to research variations of microstructure and electrical properties: i) conventional thermal annealing, ii) excimer laser annealing, iii) UV irradiation. The electrical properties were obtained using Hall effect measurements and DC 4-point resistance measurement. The microstructural features were characterized by FESEM, XRD, Raman spectroscopy in terms of morphology and crystallinity. Optimized UV treatment exhibits the enhanced conductivity and crystallinity, compared to those of conventional thermal annealing.

• 한국재료학회지
• /
• 제12권10호
• /
• pp.820-824
• /
• 2002

It is of importance to know that the bonding strength and interfacial stress of SOI wafer pairs to meet with mechanical and thermal stresses during process. We fabricated Si/2000$\AA$-SiO$_2$ ∥ 2000$\AA$-SiO$_2$/Si SOI wafer pairs with electric furnace annealing, rapid thermal annealing (RTA), and fast linear annealing (FLA), respectively, by varying the annealing temperatures at a given annealing process. Bonding strength and interfacial stress were measured by a razor blade crack opening method and a laser curvature characterization method, respectively. All the annealing process induced the tensile thermal stresses. Electrical furnace annealing achieved the maximum bonding strength at $1000^{\circ}C$-2 hr anneal, while it produced constant thermal tensile stress by $1000^{\circ}C$. RTA showed very small bonding strength due to premating failure during annealing. FLA showed enough bonding strength at $500^{\circ}C$, however large thermal tensile stress were induced. We confirmed that premated wafer pairs should have appropriate compressive interfacial stress to compensate the thermal tensile stress during a given annealing process.

• 한국초전도ㆍ저온공학회논문지
• /
• 제19권2호
• /
• pp.25-28
• /
• 2017

In superconducting coil applications particularly in wet wound coils, coated conductor (CC) tapes are subjected to different type of stresses that could affect its electromechanical transport property. These include hoop stress acting along the length of the CC tape and the Lorentz force acting perpendicular to the CC tape's surface. Since the latter is commonly associated with the delamination problem of multi-layered REBCO CC tapes, more understanding and attention on the delamination phenomena induced in the case of coil applications are needed. Difference on the coefficient of thermal expansion (CTE) of each constituent layer of the CC tape, the bobbin, and the impregnating materials is the main causes of delamination in CC tapes when subjected to thermal and mechanical cycling. In the design of degradation-free superconducting coils, therefore, characterization of the delamination behaviors including mechanism and strength in the multi-layered REBCO CC tapes becomes a critical issue. Various trials to increase the delamination strength by improving interface characteristics at interlayers have been performed. In this study, in order to investigate the influences of laser cleaning and Ag annealing treated at the substrate side surface, transverse tensile tests were conducted under different sample configurations using $4.5mm{\times}8mm$ upper anvil. The mechanical delamination strength of differently processed CC samples was examined at room temperature (RT). As a result, the Sample 1 with the additional laser cleaning and Ag annealing processes and the Sample 2 with additional Ag annealing process only showed higher mechanical delamination strength as compared to the Sample 3 without such additional treatments. Sample 3 showed quite different behavior when the loading direction is to the substrate side where the delamination strength much lower as compared to other cases.

• 한국세라믹학회지
• /
• 제47권4호
• /
• pp.329-332
• /
• 2010

In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at $150^{\circ}C$ right after the film deposition. The $O_2$ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to $18\;cm^2/Vs$ at carrier concentrations greater than $10^{18}\;cm^{-3}$. As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in >3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.

• 전기화학회지
• /
• 제8권1호
• /
• pp.24-31
• /
• 2005

Ion-Shower-Doping장비 및 $PH_/3M_2$혼합 가스를 사용하여 Phosphorous를 ELA방법으로 제조된 Poly-Si에 가속 전압 및 조사량을 변수로 이온 주입하였다. As-implanted된 시편의 결정도는 UV-transmittance spectroscopy를 사용하여 측정하였다. 이 때 UV-transmittance를 이용하여 측정한 값은 Raman spectroscopy를 이용해서 측정한 값과 서로 관련되어 있음을 알았다. 면 저항은 가속전압이 1kV에서 15kV까지 증가함에 따라 감소한다 그러나 가혹한 도핑조건하에서는 가속전압의 증가 시 면 저항이 증가한다. 이는 활성화 열처리 후 치유되지 않은 결함에 의해 전자가 포획되며 이에 따라 전하 운반자의 농도가 감소하는 때문이다. 활성화 열처리는 로열처리, RTA 열처리, ELA 열처리 등의 방법으로 수행하였고 열처리 방법에 따르는 도펀트의 활성화 및 결함의 회복의 거동을 연구하였다

• 한국진공학회지
• /
• 제13권1호
• /
• pp.29-33
• /
• 2004

본 논문에서는 RF 마그네트론 스퍼터링법으로 비정질 실리콘을 증착하여 진공분위기에서 엑시머 레이저 어닐링을 이용하여 플라스틱 기판위에 극저온 다결정 실리콘 박막(＜$150^{\circ}C$)을 형성하였다. 비정질 실리콘 박막은 $120^{\circ}C$에서 Ar/He 혼합가스로 증착하였으며, Rutherford Backscattering Spectrometry로 측정한 박막내 아르곤 함량은 2% 이하였다. 에너지 밀도 320mJ/$\textrm{cm}^2$일 때 다결정 실리콘의 결정화도는 62%, Root-Mean-Square roughness는 267$\AA$를 나타내었다. 엑시머 레이저 결정화 후 결정립의 크기는 50nm에서 100nm 정도를 나타내었다.

• 한국재료학회지
• /
• 제15권5호
• /
• pp.293-300
• /
• 2005

ZnO:Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO:Li sintered pellet was irradiated by the ArF (193 nm) excimer laser. The growth temperature was fixed at $400^{\circ}C$. The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of epilayers measured by van der Pauw-Hall method are $2.69\times10cm^{-3}$ and $52.137cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of epilayers obtained from the absorption spectra is well described by the Varshni's relation, $E_g(T)=3.5128eV{\cdot}(9.51\times10^{-4}eV/K)T^2/(T+280K)$. After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li has been investigated by PL at 10 K. The Peaks of native defects of $V_{zn},\;V_o,\;Zn_{int},\;and\;O_{int}$ showned on PL spectrum are classified as a donors or accepters type. We confirm that $ZnO:Li/Al_2O_3$ in vacuum do not form the native defects because ZnO:Li epilayers in vacuum existe in the form of stable bonds.