• 제목/요약/키워드: Langmuir-Blodgett film.

검색결과 224건 처리시간 0.033초

Photoswitching Characteristics of Biodevice Consisting of Chlorophyll $\alpha$ Langmuir-Blodgett Film

  • Nam, Yun-Suk;Choi, Jeong-Woo;Lee, Won-Hong
    • Journal of Microbiology and Biotechnology
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    • 제14권5호
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    • pp.1038-1042
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    • 2004
  • The photoelectric responses of a biodevice consisting of chlorophyll $\alpha$ Langmuir-Blodgett film were investigated. Chlorophyll $\alpha$ Langmuir-Blodgett films were deposited onto ITO and Au coated glass. To confirm film formation, surface analysis of chlorophyll $\alpha$ Langmuir-Blodgett film was carried out by measurement using atomic force microscopy. The metal/insulator/metal structured biodevice was constructed by depositing aluminum onto the chlorophyll $\alpha$ Langmuir-Blodgett film surface. To investigate the photoelectric response, the current-voltage characteristic was measured by the conducting metal tip. The photoswitching function and transient photovoltage characteristics of the proposed device were measured by irradiation with Ar ion laser and $N_2$ pulse laser, respectively. This research suggested that the proposed biodevice consisting of chlorophyll $\alpha$ could be applied to the molecular scale biosensor and/or bioelectronic device.

Eicosanoic Acid Langmuir-Blodgett(LB) 박막을 이용한 분자 다이오드의 전기적 특성 (Electrical Properties of Molecular Diode Using Eicosanoic Acid Langmuir-Blodgett(LB) Monolayer Film)

  • 구자룡;이호식;권혁주;손병청
    • 한국응용과학기술학회지
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    • 제20권2호
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    • pp.148-153
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    • 2003
  • Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a $CdCl_2$ solution as a 2${\times}10^{-4}$ mol/L. Also we used a bottom electrode as an Al/$Al_2O_3$ and a top electrode as a Al and Ti/Al. Here, the $Al_2O_3$ on the bottom electrode was deposited by thermal evaporation method. The $Al_2O_3$ layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 ${\AA}^2$/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.

(N-docosyl quinolinium)-TCNQ(1:2) 전하 이동 착물 Langmuir-Blodgett막의 전기적 특성 (Electrical Properties of (N-docosyl quinolinium)-TCNQ(1 :2) Charge Transfer Complex Langmuir-Blodgett Films)

  • 정순욱;정회걸
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.143-146
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    • 1999
  • In this study, Ultra-thin films of (N-ducosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. By measure of UV-vis spectra and capacitance, deposition status was confirmed together with the thickness of natural oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The electrical properties of (N-docosyl 7uin7linium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction uf either vertical or horizontal axis is results in a quite different value.

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Langmuir-Blodgett 법을 이용한 P(VDF-TrFE) 박막 트랜지스터 (P(VDF-TrFE) Thin Film Transistors using Langmuir-Blodgett Method)

  • 김광호
    • 반도체디스플레이기술학회지
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    • 제19권2호
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    • pp.72-76
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    • 2020
  • The author demonstrated organic ferroelectric thin-film transistors with ferroelectric materials of P(VDF-TrFE) and an amorphous oxide semiconducting In-Ga-Zn-O channel on the silicon substrates. The organic ferroelectric layers were deposited on an oxide semiconductor layer by Langmuir-Blodgett method and then annealed at 128℃ for 30min. The carrier mobility and current on/off ratio of the memory transistors showed 9 ㎠V-1s-1 and 6 orders of magnitude, respectively. We can conclude from the obtained results that proposed memory transistors were quite suitable to realize flexible and werable electronic applications.

Langmuir-Blodgett법으로 제조한 기능성 폴리이미드 초박막의 전기화학적 특성 (Electrochemical Properties of Ultrathin Film Prepared Functional Polyimide by Langmuir-Blodgett Method)

  • 박근호;민창훈;손태철
    • 한국응용과학기술학회지
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    • 제26권4호
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    • pp.400-406
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    • 2009
  • We investigated the electrochemical properties for Langmuir-Blodgett (LB) films of functionalized polyimide. LB films of polyimide monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with a three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) at various concentrations(0.5, 1.0, and 1.5 N) of $NaClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100 and 150 mV/s, respectively. As a result, monolayer and multilayer LB films of polyimide are appeared on irreversible process caused by the oxidation current from the cyclic voltammogram.

Fabrication of Protein A-Viologen Hetero Langmuir- Blodgett Film for Fluorescence Immunoassay

  • Lee, Woochang;Chun, Bum-Suk;Oh, Byung-Keun;Lee, Won-Hong;Park, Jeong-Woo
    • Biotechnology and Bioprocess Engineering:BBE
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    • 제9권4호
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    • pp.241-244
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    • 2004
  • Protein A molecular thin film was fabricated as a platform of antibody-based biosensor. For the immobilization of the protein A thin film, a viologen multilayer was built up using the Langmuir-Blodgett (LB) technique, and then, protein A was adsorbed on the viologen LB film by an electrostatic interaction force, which was formed as a hetero-film structure. For the deposition of viologen, surface pressure area ($\pi$-A) isotherm was investigated. The fabricated protein A-viologen hetero LB film was investigated using atomic force microscopy (AFM). Using the developed molecular film, antibody immobilization and fluorescence measurement was carried out.

폴리이미드와 인지질 혼합물의 나노 Langmuir-Blodgett막의 전기화학적 특성에 관한 연구 (A Study on the Electrochemical Properties of Langmuir-Blodgett Nano-film Mixed with Polyimide and Phospholipid)

  • 박근호
    • 한국응용과학기술학회지
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    • 제29권3호
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    • pp.421-428
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    • 2012
  • 우리는 순환전압전류법에 의한 폴리이미드와 인지질혼합 나노LB 필름에 대한 전기화학적 특성을 조사하였다. polyamic acid와 인지질 단분자 LB막은 ITO glass에 Langmuir-Blodgett법을 사용하여 제막하였다. 전기화학적 특성은 $KClO_4$ 용액에서 3 전극 시스템 (Ag/AgCl 기준전극, 백금선 카운터 전극 및 LB 필름이 코팅된 ITO 작업 전극)으로 순환전압전류법을 사용하여 측정하였다. 측정 범위는 연속적으로 1650 mV로 산화시키고, 초기전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50, 100, 150, 200 및 250 mV/s였다. 그 결과 polyamic acid와 인지질 혼합물의 LB 필름은 순환전압전류도표로부터 환원전류로 인한 비가역공정으로 나타났다. Polyamic acid와 인지질혼합 LB막에서 확산계수(D)효과는 LAPC를 사용한 경우가 LLPC를 사용한 것 보다 확산계수 값이 적었다.

아조벤젠기를 가진 지방산 Langmuir-blodgett막의 전기화학적 특성 (Electrochemical properties of Langmuir-blodgett Films of Fatty acid containing Azobezene)

  • 박근호;김범준;손태철;이경구;주찬홍;박태곤
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.459-462
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    • 2001
  • We have investgated the photoisomerization using light irradiation 8A5H LB film accumulated by monolayer and three layers on an ITO. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in 0.1mol/L NaClO$_4$ solution. The scan rate was 100mv/s.

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전도성 Langmuir-Blodgett 막 제작을 위한 성막물질의 합성과 막의 누적 (Synthesis of Membrane Forming Material for the Fabrication of Conducting Langmuir-Blodgett Film and Layering the Film.)

  • 신동명;손병청;유덕선;최강훈;강도열
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1991년도 하계학술대회 논문집
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    • pp.238-240
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    • 1991
  • Langmuir-Blodgett(L.B) method is one of the most possible candidate for the fabrication of the micro scale memory or electrical devices. As for a fundamental study on the conduction mechanism in the organic thin membrane, N-alkyl quinolium-TCNQ complexes were synthesized and their physical properties were examined spectroscopically. LB film was produced by using Moving Wall Type LB Apparatus. The average area per molecule (N-docosylquinolium-TCNQ) was $67.97{\AA}^2$ which is ${\AA}^2$ larger than N-docosyl quinolium-TCNQ.

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