• Title/Summary/Keyword: Langmuir-Blodgett film.

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Photoswitching Characteristics of Biodevice Consisting of Chlorophyll $\alpha$ Langmuir-Blodgett Film

  • Nam, Yun-Suk;Choi, Jeong-Woo;Lee, Won-Hong
    • Journal of Microbiology and Biotechnology
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    • v.14 no.5
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    • pp.1038-1042
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    • 2004
  • The photoelectric responses of a biodevice consisting of chlorophyll $\alpha$ Langmuir-Blodgett film were investigated. Chlorophyll $\alpha$ Langmuir-Blodgett films were deposited onto ITO and Au coated glass. To confirm film formation, surface analysis of chlorophyll $\alpha$ Langmuir-Blodgett film was carried out by measurement using atomic force microscopy. The metal/insulator/metal structured biodevice was constructed by depositing aluminum onto the chlorophyll $\alpha$ Langmuir-Blodgett film surface. To investigate the photoelectric response, the current-voltage characteristic was measured by the conducting metal tip. The photoswitching function and transient photovoltage characteristics of the proposed device were measured by irradiation with Ar ion laser and $N_2$ pulse laser, respectively. This research suggested that the proposed biodevice consisting of chlorophyll $\alpha$ could be applied to the molecular scale biosensor and/or bioelectronic device.

Electrical Properties of Molecular Diode Using Eicosanoic Acid Langmuir-Blodgett(LB) Monolayer Film (Eicosanoic Acid Langmuir-Blodgett(LB) 박막을 이용한 분자 다이오드의 전기적 특성)

  • Koo, Ja-Ryong;Lee, Ho-Sik;Kwon, Hyuck-Joo;Sohn, Byoung-Chung
    • Journal of the Korean Applied Science and Technology
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    • v.20 no.2
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    • pp.148-153
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    • 2003
  • Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a $CdCl_2$ solution as a 2${\times}10^{-4}$ mol/L. Also we used a bottom electrode as an Al/$Al_2O_3$ and a top electrode as a Al and Ti/Al. Here, the $Al_2O_3$ on the bottom electrode was deposited by thermal evaporation method. The $Al_2O_3$ layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 ${\AA}^2$/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.

Electrical Properties of (N-docosyl quinolinium)-TCNQ(1 :2) Charge Transfer Complex Langmuir-Blodgett Films ((N-docosyl quinolinium)-TCNQ(1:2) 전하 이동 착물 Langmuir-Blodgett막의 전기적 특성)

  • 정순욱;정회걸
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.143-146
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    • 1999
  • In this study, Ultra-thin films of (N-ducosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. By measure of UV-vis spectra and capacitance, deposition status was confirmed together with the thickness of natural oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The electrical properties of (N-docosyl 7uin7linium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction uf either vertical or horizontal axis is results in a quite different value.

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P(VDF-TrFE) Thin Film Transistors using Langmuir-Blodgett Method (Langmuir-Blodgett 법을 이용한 P(VDF-TrFE) 박막 트랜지스터)

  • Kim, Kwang-Ho
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.2
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    • pp.72-76
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    • 2020
  • The author demonstrated organic ferroelectric thin-film transistors with ferroelectric materials of P(VDF-TrFE) and an amorphous oxide semiconducting In-Ga-Zn-O channel on the silicon substrates. The organic ferroelectric layers were deposited on an oxide semiconductor layer by Langmuir-Blodgett method and then annealed at 128℃ for 30min. The carrier mobility and current on/off ratio of the memory transistors showed 9 ㎠V-1s-1 and 6 orders of magnitude, respectively. We can conclude from the obtained results that proposed memory transistors were quite suitable to realize flexible and werable electronic applications.

Electrochemical Properties of Ultrathin Film Prepared Functional Polyimide by Langmuir-Blodgett Method (Langmuir-Blodgett법으로 제조한 기능성 폴리이미드 초박막의 전기화학적 특성)

  • Park, Keun-Ho;Min, Chang-Hun;Son, Tae-Chul
    • Journal of the Korean Applied Science and Technology
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    • v.26 no.4
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    • pp.400-406
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    • 2009
  • We investigated the electrochemical properties for Langmuir-Blodgett (LB) films of functionalized polyimide. LB films of polyimide monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with a three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) at various concentrations(0.5, 1.0, and 1.5 N) of $NaClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100 and 150 mV/s, respectively. As a result, monolayer and multilayer LB films of polyimide are appeared on irreversible process caused by the oxidation current from the cyclic voltammogram.

Fabrication of Protein A-Viologen Hetero Langmuir- Blodgett Film for Fluorescence Immunoassay

  • Lee, Woochang;Chun, Bum-Suk;Oh, Byung-Keun;Lee, Won-Hong;Park, Jeong-Woo
    • Biotechnology and Bioprocess Engineering:BBE
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    • v.9 no.4
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    • pp.241-244
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    • 2004
  • Protein A molecular thin film was fabricated as a platform of antibody-based biosensor. For the immobilization of the protein A thin film, a viologen multilayer was built up using the Langmuir-Blodgett (LB) technique, and then, protein A was adsorbed on the viologen LB film by an electrostatic interaction force, which was formed as a hetero-film structure. For the deposition of viologen, surface pressure area ($\pi$-A) isotherm was investigated. The fabricated protein A-viologen hetero LB film was investigated using atomic force microscopy (AFM). Using the developed molecular film, antibody immobilization and fluorescence measurement was carried out.

A Study on the Electrochemical Properties of Langmuir-Blodgett Nano-film Mixed with Polyimide and Phospholipid (폴리이미드와 인지질 혼합물의 나노 Langmuir-Blodgett막의 전기화학적 특성에 관한 연구)

  • Park, Keun-Ho
    • Journal of the Korean Applied Science and Technology
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    • v.29 no.3
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    • pp.421-428
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    • 2012
  • We investigated an electrochemical properties for Langmuir-Blodgett (LB) nano-films of polyimide and phospholipid mixture. LB films of polyamic acid and phospholipid monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) in $KClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100, 150, 200 and 250 mV/s, respectively. As a result, monolayer LB films of polyamic acid and phospholipid mixture was appeared on irreversible process caused by the reduction current from the cyclic voltammogram. Diffusion coefficient (D) effect in the polyamic acid and phospholipid mixture was used in the LAPC with LLPC fewer than the diffusion coefficient values.

Electrochemical properties of Langmuir-blodgett Films of Fatty acid containing Azobezene (아조벤젠기를 가진 지방산 Langmuir-blodgett막의 전기화학적 특성)

  • 박근호;김범준;손태철;이경구;주찬홍;박태곤
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.459-462
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    • 2001
  • We have investgated the photoisomerization using light irradiation 8A5H LB film accumulated by monolayer and three layers on an ITO. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in 0.1mol/L NaClO$_4$ solution. The scan rate was 100mv/s.

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Synthesis of Membrane Forming Material for the Fabrication of Conducting Langmuir-Blodgett Film and Layering the Film. (전도성 Langmuir-Blodgett 막 제작을 위한 성막물질의 합성과 막의 누적)

  • Shin, Dong-Myung;Sohn, Byung-Chung;You, Duck-Sun;Choi, Kang-Hoon;Kang, Dou-Yol
    • Proceedings of the KIEE Conference
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    • 1991.07a
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    • pp.238-240
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    • 1991
  • Langmuir-Blodgett(L.B) method is one of the most possible candidate for the fabrication of the micro scale memory or electrical devices. As for a fundamental study on the conduction mechanism in the organic thin membrane, N-alkyl quinolium-TCNQ complexes were synthesized and their physical properties were examined spectroscopically. LB film was produced by using Moving Wall Type LB Apparatus. The average area per molecule (N-docosylquinolium-TCNQ) was $67.97{\AA}^2$ which is ${\AA}^2$ larger than N-docosyl quinolium-TCNQ.

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