• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.6
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• pp.2624-2630
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• 2013

In LED chip packaging, die bonding is a very important process which fixes the LED chip on the lead flame to provide enough strength for the next process. During the process, inspection processes are very important to detect exact locations of dispensed epoxy dots and to determine bonding status of dies whether they are lies at exact positions with sufficient bonding strength. In this study, a useful machine vision based inspection system is proposed for the LED die bonder. In the proposed system, 2 cameras are used for epoxy dot position detection and 2 cameras are sued for die attaching status determination. New vision processing algorithm is proposed, and its efficiency is verified through required field experiments. Measured position error is less than $X:-29{\mu}m$, $Y:-32{\mu}m$ and rotation error:$3^{\circ}$ using proposed vision algorithm. It is concluded that the proposed machine vision based inspection system can be successfully implemented on the developed die bonding system.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.8
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• pp.3301-3306
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• 2012

In LED chip packaging, die bonding is a very important process which fixes the LED chip on the lead frame to provide enough strength for the next process. Conventional pick-up device of the die bonder is simply operated by up and down motion of a collet and an ejector pin. However, this method may cause undesired problems such as position misalignment and/or severe die damage when the pick-up device reaches the die. In this study, to minimize the position alignment error and die damage, a die bonder is developed by adopting a new pick-up head for precise alignment and high speed feeding. To evaluate structural stability of the designed system, required finite element model of the die bonder is generated, and structural analysis is performed. Vibration analysis of the pick-up head is also performed using developed finite element model at operation frequency range. As a result of the analysis, deformation, stress, and natural frequency of the die bonder are investigated.

• The Journal of Information Systems
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• v.20 no.3
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• pp.111-127
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• 2011

This study is intended for international cooperation in the field of LED were analyzed. The results, LED wide coverage areas, and a promising future is expected to grow fast enough to occupancy for a major national technology is a competitive situation. Chip Scale Package, including our country, such as LED manufacturing technology that might be competitive in parts, but new technologies such as renal substrate R&D and technology development still active preemption is not the situation. Renal substrate, particularly, large-diameter sapphire, large size/large LED manufacturers, such as a promising area for future research and development support will be needed. To do this, previous research in this area and the U.S., Japan cooperation in such studies also will need to expand. Bibliometrics way through this study, analytical techniques and analytical tools used in the integrated analysis of the usefulness and necessity of the system development were found.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.1-6
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• 2014

Flip chip bonded LED packages possess lower thermal resistance than wire bonded LED packages because of short thermal path. In this study, thermal and bonding properties of flip chip bonded high brightness LED were evaluated for Au-Sn thermo-compression bonded LEDs and Sn-Ag-Cu reflow bonded LEDs. For the Au-Sn thermo-compression bonding, bonding pressure and bonding temperature were 50 N and 300oC, respectively. For the SAC solder reflow bonding, peak temperature was $255^{\circ}C$ for 30 sec. The shear strength of the Au-Sn thermo-compression joint was $3508.5gf/mm^2$ and that of the SAC reflow joint was 5798.5 gf/mm. After the shear test, the fracture occurred at the isolation layer in the LED chip for both Au-Sn and SAC joints. Thermal resistance of Au-Sn sample was lower than that of SAC bonded sample due to the void formation in the SAC solder.

• Smart Media Journal
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• v.11 no.9
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• pp.21-29
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• 2022

Ultra Violet(UV) is gradually being replaced with LED instead of general UV lamps. However, the light efficiency of UV LED is still lower than that of the general lamp, and the light efficiency is also low. Due to the current environment and technical problems of UV lamps, the LED replacements are gradually being made. In this study, a new package design and analysis were performed to increase the lifetime and performance of UV LEDs. A new packaging for UV LED were designed and implemented. The new packaging for UV LED was constructed to improve light efficiency. And the electrical and optical characteristics were analyzed respectively. To improve the optical efficiency in UV LED package, the Al has been used based on high reflectivity and applying the optimal lens focusing. Compared to the existing silver Ag, the light efficiency was improved by about 30% or more, and it was confirmed that the light output degradation characteristic was improved by about 10% in the newly applied optical device chip.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.87-92
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• 2007

A $CaAl_{12}O_{19}:Mn^{4+}$ red phosphor showed the highest emission intensity at a concentration of 0.02mole $Mn^{4+}$ and the high crystallinity and luminescent properties were obtained at $1600^{\circ}C$ firing temperature for 3hr. The synthesized phosphor showed a broad emission band at 658nm wavelength. Red light-emitting diodes(LEDs) were fabricated through the integration of on InGaN UV bare chip and a 1:3 ratio of $CaAl_{12}O_{19}:Mn^{4+}$ and epoxy resin in a single package. This coated LED can be applicable to make White LEDs under excitation energy of UV LED.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.19-21
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• 2005

The ball shea. tests for ball grid array (BGA) and flip chip packages were carried out with different displacement rates to find out the optimum condition of the displacement rate for this test. The BGA packages consisted of two different kinds of solder balls (eutectic Sn-37wt.%Pb and Sn-3.5wt.%Ag) and electroplated Au/Ni/Cu substrate, whereas the flip chip package consisted of electroplated Sn-37Pb solder and Cu UBM. The packages were reflowed up to 10 times, or aged at 443 K up to 21 days. The variation of the displacement rate resulted in the variations of the shear properties such as shear force, displacement rate at break, fracture mode and strain rate sensitivity. The increase in the displacement rate led to the increase of the shear force and brittleness of solder joints.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.175-182
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• 2017

In light emitting diode (LED) chip packaging, wire bonding is an important process that connects the LED chip on the lead frame pad with the Au wire and enables electrical operation for the next process. The wire bonding process is divided by two types: thermo compression bonding and ultrasonic bonding. Generally, the wire bonding process consists of three steps: 1st ball bonding that bonds the shape of the ball on the LED chip electrode, looping process that hangs the wire toward another connecting part with a loop shape, and 2nd stitch bonding that forms and bonds to another electrode. This study analyzed the factors affecting the LED die bonding processes to optimize the process capability that bonds a small Zener diode chip on the PLCC (plastic-leaded chip-carrier) LED package frame, and then applied response surface analysis. The design of experiment (DOE) was established considering the five factors, three levels, and four responses by analyzing the factors. As a result, the optimal conditions that meet all the response targets can be derived.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.7
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• pp.1-12
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• 2014

This paper is proposed to design the new heat-sink apparatus for improving the heat transfer characteristics in the power LED chip, and results of the operation characteristics were discussed. The core design is that the soldering through-hole on the FR-4 PCB board is formed to the effective heat transfer. That is directly filled with Ag-nano materials, which shows the high thermal conductivity. The heat transfer medium consisting of Ag-nano materials is classified into two structures. Mediums are called as the heat slug and the multi-pin in this work. The heat of the high temperature generated from the LED chip was directly transferred to the heat slug of the one large size. And the accumulated heat from the heat slug was quickly dissipated by the medium of the multi-pin, which is the same body with the heat slug. This multi-pin was designed for the multi-dissipation of heat by increasing the surface areas with a little pins. Subsequently, the speed of the heat transfer with this new heat-sink apparatus is three times faster than the conventional heat-sink. Therefore, the efficiency of the illuminating light will be improved by adapting this new heat-sink apparatus in the large area's LED.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.3
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• pp.609-613
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• 2010

In this paper, we optimized and simulated the heatsink of 75W LED module for street lighting and evaluated the optical properties with the manufactured heatsink. the structure of LED package make simple as chip and heatslug and thermal flow is analyzed by using the FEM(Finite Element Method) with CFdesign V10. Also, we measured the temperature of heatsink and evaluated the optical properties with infrared thermal image camera and integrated sphere system for luminous flux in $1\;[m^3]$ box. As results, Heatsink optimized in 3 mm pin thickness, 6 mm base thickness and 16 number of pin count by using Heatsink-designer and got the results which is the temperature of $47.37\;[^{\circ}C]$ and thermal resistance of $0.48407\;[W/^{\circ}C]$. In thermal flow simulation, the temperature of heatsink decreased from $51.54\;[^{\circ}C]$ to $51.51\;[^{\circ}C]$ and the temperature of heatsink by the time in real measurement decreased from $47.03\;[^{\circ}C]$ to $46.87\;[^{\circ}C]$. Moreover, we improve 0.68 % in the decreased ratio of the luminous flux.