• Title/Summary/Keyword: LCD Glass

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A comparison and analysis of laser sensors for measuring the flatness and thickness of flat display glass (평판 디스플레이용 유리의 평탄도 및 두께 측정을 위한 레이저 센서의 비교 분석)

  • Kim, Soon-Chul;Han, Chang-Ho;Oh, Chun-Suk
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.1079-1080
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    • 2008
  • To improve productivity of TFT-LCD and PDP, it is required that the inspection system of flat glass should be established. It is composed of robot arms, base table, and laser sensors. This paper focuses on three non-contact laser sensors. After testing three laser sensors, LG-G30 is selected.

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An study of transcription by processing conditions of Direct Surface Forming Method (DSF의 성형조건 변화가 전사성에 미치는 영향에 관한 연구)

  • 조광환;윤경환
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2003.10a
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    • pp.221-224
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    • 2003
  • Recently, the market share of the thin-film-transistor liquid-crystalline-display (TFT-LCD) is growing rapidly in display device market. The backlight unit is used as a light source of TFT-LCD module. A light-guide is one of several important components of backlight unit. The manufacturing technology and optical system design of the light guide is very sensitive to quality and cost of the TFT-LCD module. In the present study a new manufacturing method which is called as direct surface forming(DSF) has been tested under various conditions. The result of this test, V-groove pattern shows different shapes depends on the temperature of mold surface, contact time of mold and depth of V-groove.

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The invariant design of planar magnetron sputtering TFT-LCD

  • Yoo, W.J.;Demaray, E.;Hosokawa;Pethe, R.
    • Journal of Korean Vacuum Science & Technology
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    • v.3 no.2
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    • pp.101-106
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    • 1999
  • The main consideration factor to design a magnetron of the sputtering system for TFT-LCD metallization is high sheet resistance (Rs) uniformity which is provided by the high target erosion and high current efficiency. The present study has developed a rectangular magnetron for TFT-LCD to bve considered full target erosion and high film uniformity. After an aluminum-2 at.% and alloy target was installed in a magnetron source and the film was deposited on the glass of 600${\times}$720 mm, the Rs uniformity of the deposited film was measured as functions of the magnet tilt and magnet scanning configuration. And the target erosion profile was observed with the target voltage. When sputtered at 4mtorr and 10kW, the magnet tilt for the high Rs uniformity of 8.38% was 7mm. The plasma voltage at the dwell home and end for full-face target erosion, when scanned the magnetron was 120% compared to the mean voltage of the other area.

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A Study on the characteristic & the methods to protect hillock in pure -Al for LCD glass (LCD 대형기판에서의 pure-Al Hillock특성 및 억제 방법에 대한 연구)

  • Baek, Gum-Ju;Yi, Jun-Sin;Jung, Chang-Ho;Choi, Dong-Wook
    • Proceedings of the KIEE Conference
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    • 2005.11a
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    • pp.183-188
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    • 2005
  • 본 논문은 대면적 LCD 기판에서의 hillock 의 특성 및 억제 방법을 제안한다. pure-Al 의 thickness 에 따른 hillock의 발생개수는 감소 하며 size는 증가하는 경향을 나타낸다. 이는 pure-Al 의 grain size가 thickness에 따라 증가하며 즉 grain size가 커질 수 록 발생 hillock의 size는 증가 한다는 것을 알 수 있다. hillock 억제 방안으로 Mo capping을 제안 하며 이에 대한 Modeling 및 효과 파악 결과 pure-Al $2500{\AA}$에 Mo $500{\AA}$ capping시 pure-Al의 hillock을 억제 한다는 신뢰성 있는 결과를 얻을 수 있었다 이에 대한 이론적 Modeling은 Chaudhari's Model을 modify하여 사용 하였다. 그 외 sputter온도에 따라 hillock 발생 개수가 증가 함을 관찰 하였다.

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Characterization of quartz glass substrate for TFT-LCD panel (TFT-LCD 패널용 석영유리기판의 특성평가)

  • Park, Sung-Eun;Shin, Ji-Shik;Oh, Han-Seog;Kim, Ki-Young;Kang, Bok-Hyun
    • Proceedings of the KAIS Fall Conference
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    • 2006.11a
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    • pp.257-260
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    • 2006
  • 본 논문에서는 TFT-LCD 패널용 석영유리기판을 제작하여 투과율, OH함량, OH농도분포, 점도, 열팽창계수 등에 대한 특성 평가를 하였다. 그 결과 고온 poly-Si TFT-LCD용 기판으로의 사용 가능성을 확인하였다.

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Discharge Characteristic of Surface Type FFL as LCD Backlighting according to Dielectric Layer (LCD 후면광원용 면방전형 FFL의 Dielectric Layer에 따른 방전 특성)

  • 임민수;정득영;윤성현;임기조;권순석
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.177-180
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    • 1999
  • In this paper, we studied Surface Discharge Type Flat Fluorescent Lamp(FFL) with High Luminance for LCD Backlighting. This lamp is Surface Discharge Type structure with a pair of Sodalime glass, insulator layer, phosphor layer, and Xe gas gap. There are two influences of Electric field on different dielectric thickness. The Electric field difference at the dielectric layer itself enhances minimum value of firing voltage and luminance uniformity. So, we measured the Electric filed at 0.5mm, 1mm gap length and discharge voltage for difference dielectric layer thickness. In experiment result, the thicker dielectric layer has higher firing voltage and lower current.

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A Study on LCD Color Filter Printing Process Using Localized Laser Heating (레이저 가열을 이용한 LCD 컬러 필터 프린팅 공정에 관한 연구)

  • Na, S.J.;Lee, J.H.;Yoo, C.D.
    • Laser Solutions
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    • v.10 no.2
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    • pp.5-15
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    • 2007
  • A new printing process for LCD color filter is proposed in this work by using the localized laser heating, which is called laser-induced spray printing (LISP) process. The LISP is a non-contact process, which injects the ink from the donor substrate to the glass substrate by the bubble pressure induced by laser heating. The temperature distribution of the donor substrate is calculated numerically to explain the ink ejection phenomena. The composition of the ink was includes the red pigment, n-butanol, xylene, BCA and epoxy. Experiments were conducted by using the fiber laser system, and the color filter patterns were deposited successfully under the proper laser heating conditions.

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Development of Anti-Glare Coating Technique Using Screen Printing (스크린 프린팅 기법을 이용한 눈부심 방지 기술 개발)

  • Choi, Jeongju
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.20 no.6
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    • pp.272-277
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    • 2019
  • In this paper, a manufacturing method of an anti-glare cover glass on LCD for outdoor use is proposed. The main specification of cover glass is hardness and anti-glare. Hardness is achieved by using the tempered glass, and anti-glare(AG) film is laminated to meet anti-glare specification no the tempered glass. However, the AG film is difficult to maintain the AG performance continuously because the abrasion resistance of the PET film itself is as weak as about 3H. Therefore, a novel production procedure using screen printing method is proposed. The proposed coating is implemented by applying $ZnO-B_2O_3-SiO_2$ powder on glass surface and the glass is made with enhanced hardness through tempering process. In order to apply the ZBS powder uniformly on the glass surface, a screen printing process is used. The main parameters to be considered in screen printing are the oil concentration and mesh opening size. Because the amount of ZBS powder applied to the printing process is controlled by these two parameters, the correlativity is confirmed through the experiments. In order to evaluate the performance of the proposed method, the haze, surface roughness and transmittance are selected as the performance index and are compared with the AG film. As a result of comparison, it is verified that the transmittance of the proposed tempered glass is 83.1%, which is slightly lower than 89.5% of AG film, but the hardness is more than double to 7H.

High rate deposition of poly-si thin films using new magnetron sputtering source

  • Boo, Jin-Hyo;Park, Heon-Kyu;Nam, Kyung-Hoon;Han, Jeon-Geon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.186-186
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    • 2000
  • After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

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Study on Flow Analysis in Glass Panel Vacuum Lift System (Glass 패널 진공흡착시스템의 유동해석 연구)

  • Kim, Dong-Kyun;Yoon, Cheon-Seog
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.33 no.11
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    • pp.886-893
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    • 2009
  • To develop glass panel vacuum lift system for the post process in module line of FPD(Flat panel display) such as LCD and PDP, new vacuum adsorption parts of this system are proposed. These parts are composed of variable geometry configurations utilizing ceramic porous medium for variable size of glass panels. In order to design this device, detail understanding of flow phenomena in the flow path of vacuum adsorption system is essential. Thus, CFD analysis and designs are performed for several configurations in terms of pressure drop and balancing force at the adsorption side. From the result, new configuration is recommended for optimum design and manufacturing purpose.