• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.665-668
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• 1997

We fabricated a number of optical fiber Bragg gratings by varying the UV beam parameters such as the laser energy density, pulse repetition rate and exposing time. The reflectance and the Bragg wavelength shift of the fiber Bragg gratings formed with a KrF excimer laser in real time depend strongly on the UV beam parameters. The index changes in the gratings during the exposing time are well fitted to the well known equations.

• Applied Microscopy
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• v.42 no.4
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• pp.207-211
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• 2012

We examined the electrical properties and microstructure of NiO produced using a sol-gel method and Ni nitrate hexahydrate ($Ni[NO_3]_2{\cdot}6H_2O$) to investigate if this NiO thin film can be used as an insulator layer for resistance random access memory (ReRAM) devices. It was found that as-prepared NiO film was polycrystalline and presented as the nonstoichiometric compound $Ni_{1+x}O$ with Ni interstitials (oxygen vacancies). Resistances-witching behavior was observed in the range of 0~2 V, and the low-resistance state and high-resistance state were clearly distinguishable (${\sim}10^3$ orders). It was also demonstrated that NiO could be patterned directly by KrF eximer laser irradiation using a shadow mask. NiO thin film fabricated by the sol-gel method does not require any photoresist or vacuum processes, and therefore has potential for application as an insulating layer in low-cost ReRAM devices.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.8
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• pp.1140-1147
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• 2001

Experimental schemes that enable characterization of phase-change phenomena in the microscale regime are essential for understanding the phase-change kinetics. Particularly, monitoring rapid vaporization on a submicron length scale is an important yet challenging task in a variety of laser-processing application, including steam laser cleaning and liquid-assisted material ablation. This paper introduces a novel technique based on Michelson interferometry for probing the liquid-vaporization process on a solid surface heated by a KrF excimer laser pulse(λ=248nm, FWHM=24ns) in water. The effective thickness of a microbubble layer has been measured with nanosecond time resolution. The maximum bubble size and growth rate are estimated to be of the order of 0.1㎛ and 1m/s, respectively. The results show that the acoustic enhancement in the laser induced vaporization process is caused by bubble expansion in the initial growth stage, not by bubble collapse. This work demonstrates that the interference method is effective for detecting bubble nucleation and microscale vaporization kinetics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.109-109
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• 2011

1T-1C로 구성되는 기존의 DRAM(Dynamic Random Access Memory)은 데이터를 저장하기 위한 적절한 capacitance를 확보해야 한다. 따라서 캐패시터 면적으로 인한 집적도에 한계에 직면해있다. 따라서 이를 대체하기 위한 새로운 DRAM인 1T (Transistor) DRAM이 각광받고 있다. 기존의 DRAM과 달리 SOI (Silicon On Insulator)기술을 이용한 1T-DRAM은 데이터 저장을 위한 캐패시터가 필요없다. Impact Ionization 또는 GIDL을 이용해 발생한 정공을 채널영역에 가둠으로 서 발생하는 포텐셜 변화를 이용한다. 이로서 드레인 전류가 변화하며, 이를 이용해 '0'과 '1'을 구분한다. 기존의 1T-DRAM은 단결정 실리콘을 이용하여 개발되었으나 좀더 광범위한 디바이스로의 적용을 위해서는 다결정 실리콘 박막의 형태로 제작이 필수적이다. 단결정 실리콘을 이용할 경우 3차원 집적이나 기판재료선택에 제한적이지만 다결정 실리콘을 이용할 경우, 기판결정이 자유로우며 실리콘 박막이나 매몰 산화층의 형성 및 두께 조절이 용이하다. 때문에 3차원 적층에 유리하여 다결정 실리콘 박막 형태의 1T-DRAM 제작이 요구되고 있다. 따라서 이번연구에서는 엑시머 레이저 어닐링 및 고상결정화 방법을 이용하여 결정화 시킨 다결정 실리콘을 이용하여 1T-DRAM을 제작하였으며 메모리 특성을 확인하였다. 기판은 상부실리콘 100 nm, buried oxide 200 nm로 구성된 SOI구조의 기판을 사용하였다. 엑시머 레이저 어닐링의 경우 400 mJ/cm2의 에너지를 가지는 KrF 248 nm 엑시머 레이저 이용하여 결정화시켰으며, 고상결정화 방법은 $400^{\circ}C$ 질소 분위기에서 24시간 열처리하여 결정화 시켰다. 두가지 결정화 방법을 사용하여 제작되어진 박막트랜지스터 1T-DRAM 모두 kink 현상을 확인할 수 있었으며 메모리 특성 역시 확인할 수 있었다.

• Journal of Magnetics
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• v.1 no.1
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• pp.46-50
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• 1996

Highly oriented ${BaFe_{12}{O_{19}$ films were obtained by a KrF excimer laser ablation technique using (110)$(012){Al_2}{O_3}$(001)$(012){Al_2}{O_3}$ and $(012){Al_2}{O_3}$ substrates, respectively.The degree of alignment of more than 95% were achieved for (100) on (110)$(012){Al_2}{O_3}$ and (001)$(001){Al_2}{O_3}$ planes, and heteroepitaxial films of (114) on (012)$(012){Al_2}{O_3}$were possible to be grown with a lasing energy density of 6.67 J/$cm^2$ at an oxygen partial pressure ${PO_2}$ of 900 mTorr. The best magnetic properties were obtained from the as-deposited films at the substrate temperature of $700^{\circ}C$, and post annealing treatment was not needed to enhance the magnetic properties. Experimentally saturated magnetization ($4_pi M_S$) of 3600~3800 Gauss and coercivities $(H_c)$ of 3050~3080 Oe, which approach 85% of those of Ba-ferrite bulk composed of single domain particles, were obtained in this study.

• 한국지구물리탐사학회:학술대회논문집
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• 2007.06a
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• pp.353-360
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• 2007

KIGAM has installed a FLARE+ continuous geomagnetic observation system in 1998 in Daejeon of which the IAGA identification code is DZN. The coordinates of the absolute measurement plinth precisely determined by the PDGPS(Post-Processing Differential Global Positioning System) is (127-21-37.19E, 36-22-43.96N, 45.93 m) in WGS84 for the horizontal and from the geoid surface for the vertical. Periodically we have conducted the absolute geomagnetic measurement on the plinth above. We have processed the continuous time-variation 3-axis geomagnetic data measured on arbitrary sensors' coordinates in the observatory and absolute geomagnetic data together to get as the results the time-variation H(orizontal), D(eclination), Z(vertical down), F(scalar calculated from 3 components) and P(Proton Precession Magnetometer Data). We have compared our own data with those calculated from the 10th generation IGRF(International Geomagnetic Reference Field). All the measured data in the DZN Observatory can be acquired through the website http://geomag.kigam.re.kr.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.475-479
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• 2007

Pulsed laser deposition was utilized to grow MnS thin films on c-sapphire substrate using a KrF excimer laser at growth temperatures that ranged from room temperature to $700^{\circ}C$. The results of X-ray diffraction (XRD) and UV-visible spectroscopy were employed to investigate the structural and optical properties of the MnS films. While the growth rate decreased as $T_s$ increased, the overall quality of the film improved. The highest quality MnS film was obtained at $700^{\circ}C$. Variations in the $T_s$ resulted in the MnS films exhibiting different growth mechanisms. The oriented (200) rocksalt MnS film was grown at room temperature. In the case of higher $T_s,\;200{\sim}500^{\circ}C$, the films consisted of mixed phases of rocksalt and wurtzite. The main structure of the films was altered to (111) rocksalt when the temperature was increased to in excess of $600^{\circ}C$. This behavior may very well be the result of elements such as surface energy and atomic arrangement during the growth process. The optical band gap of the obtained ${\alpha}-MnS$ film was estimated to be 3.32 eV.

• Journal of ILASS-Korea
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• v.3 no.4
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• pp.35-42
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• 1998

Laser Raman scattering method has been applied to measure equivalence ratio of methane/air and propane/air mixture in constant volume combustion chamber. We used high power KrF excimer laser$(\lambda=248nm)$ and a high gain ICCD camera to capture low intensity Raman signal. Raman shifts and Ram cross-sections of $H_2,\;O_2,\;N_2,\;CO_2,\;CH_4\;and\;C_3H_8$ were measured precisely. Our results showed an excellent agreement with other groups. Mole fraction measurement of $O_2\;and\;N_2$ from air showed that $O_2\;:\;N_2$ = 0.206 : 0.794. We used constant volume combustion chamber and gas injector which is operated at $5\sim10barg$. Methane and propane are used as a fuel. 50 Raman signal are obtained and ensemble averaged for measurement of equivalence ratio. Our measured results showed that the equivalence ratio of fuel/air mixture is reasonable at ${\pm}5%$ error range.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.1-8
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• 1993

A design of four-mirror optical system with reduction magnification 5X for deep UV ($\lambda$=248 nm of KrF excimer laser) submicron lithography is presented. Initially by using the paraxial quantities, the domain of solution for $t=d_1+d_2+d_3$<0 (d;: distance between the mirror $c_i$ and $c_{i+1}$ is found for the system which is free from the four off-axial Seidel first order aberrations that are coma, astigmatism, field curvature, and distortion. The solution with $d_5$=2.95 (normalized with respect to $c_i$= -1) is choosen and the aspherization is carried out to the spherical mirror surfaces ($c_3$ and $c_4$ in order to reduce the axial and residual off-axial higher order aberrations. The numerical aperture of the final system is as large as 0.4, which gives Rayleigh resolution of 0.38 $\mu\textrm{m}$.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1884-1886
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• 2005

KrF 펄스 레이저 증착법(pulsed laser deposition: PLD)으로 ZnO 박막을 증착하여 평판 디스플레이 소자 구동용 박막 트랜지스터(thin film transistor) 소자를 제작하였다. 전도성이 높은 실리콘웨이퍼(c-Si, 하부전극) 기판 위에 LPCVD 법으로 silicon nitride 박막을 절연막으로 형성하고, 다양한 공정 조건에서 펄스 레이저 증착법으로 제작한 ZnO 박막을 증착하여 채널층으로 하였으며, Al 박막을 증착하고 패터닝하여 소스 및 드레인 전극으로 하였다. ZnO 박막의 증착 시에 기판 온도를 다양하게 조절하고 산소 분압을 변화시켜 ZnO 박막의 특성을 조절하였다. 제작된 박막의 표면특성은 AFM(atomic force microscopy)로 분석하고, 결정특성은 XRD(X-ray diffraction)로 조사하였다. ZnO 박막의 전기적 특성은 Hall-van der Pauw 법으로 측정하였고, 광학 투과도(optical transparency)를 UV-visible photometer로 조사하였다. ZnO-TFT 소자는 $10^6$ 수준의 on-off ratio와 $2.4{\sim}6.1cm^2/V{\cdot}s$의 전계효과이동도(field effect mobility)를 보였다.