Growth of MnS Thin Film on c-Sapphire by Pulsed Laser Deposition

Pulsed laser deposition was utilized to grow MnS thin films on c-sapphire substrate using a KrF excimer laser at growth temperatures that ranged from room temperature to $700^{\circ}C$. The results of X-ray diffraction (XRD) and UV-visible spectroscopy were employed to investigate the structural and optical properties of the MnS films. While the growth rate decreased as $T_s$ increased, the overall quality of the film improved. The highest quality MnS film was obtained at $700^{\circ}C$. Variations in the $T_s$ resulted in the MnS films exhibiting different growth mechanisms. The oriented (200) rocksalt MnS film was grown at room temperature. In the case of higher $T_s,\;200{\sim}500^{\circ}C$, the films consisted of mixed phases of rocksalt and wurtzite. The main structure of the films was altered to (111) rocksalt when the temperature was increased to in excess of $600^{\circ}C$. This behavior may very well be the result of elements such as surface energy and atomic arrangement during the growth process. The optical band gap of the obtained ${\alpha}-MnS$ film was estimated to be 3.32 eV.

PLD 법에 의한 c-사파이어 기판위의 MnS 박막성장