• Journal of Korea Foundry Society
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• v.20 no.4
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• pp.240-246
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• 2000

Surface layer properties such as composition, phase, hardness, and oxide layer condition are very important if the main failure mechanism of metals is wear. Generally, stable and dense oxide layers are known to decrease the wear rate of metals by prohibition of metallic junction occurred between bare metals. Addition of Si above 4 wt% to DCI(Ductile Cast Iron) is reported to enhance the significant oxidation resistance by forming the silicon-rich surface layer which inhibits further oxidation. And addition of up to 2 wt% Mo to high Si ductile iron produces significant increases in high temperature tensile strength, creep strength, thermal fatigue resistance and oxidation resistance. High pressure wear characteristics of unalloyed DCI(Ductile cast Iron), 4.46 wt% Si ductile iron, 4.3 wt% Si-0.52 wt% Mo ductile iron were investigated through unlubricated pin-on-disc wear test. Wear test was carried out at speed of 23m/min, under pressure of 3 MPa and 3.3 MPa. Wear surfaces of each specimen were observed by SEM to determine the wear mechanism under high pressure wear condition. Addition of Si 4.46 wt% severely deteriorated wear property of ductile iron compared to unalloyed DCI. But combined addition of Si 4.3 wt%andMo0.52wt%decreasedthefrictioncoefficient(${\mu}$)ofductileironsandremarkablydelayedthemild-severeweartransition.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.495-502
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• 2014

Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.136-139
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• 2006

The tunneling magnetoresistance (TMR) ratios of magnetic tunnel junctions (MTJs), in general, decrease abruptly above 250$^{\circ}C$ due to Mn interdiffusion from an antiferromagnet IrMn layer to a ferromagnetic CoFe and/or a tunnel barrier. To improve thermal stability, we prepared MTJs with nano-oxide layers. Using a MTJ structure consisting of underlayer CoNbZr 4/bufferlayer CoFe 10/antiferromaget IrMn 7.5/pinned layer CoFe 3/tunnel barrier AlO/freelayer CoFe 3/capping CoNbZr 2 (nm), we placed a nano-oxide layer (NOL) into the underlayer or bufferlayer. Then, the thermal, structural and magneto-electric properties were measured. The TMR ratio, surface flatness, and thermal stability of the MTJs with NOLs were promoted.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.110-113
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• 1992

$n^{+}$-p homojunction InP diodes were fabricated using thermal diffusion of Sulfur into p-type InP substrates(Zn doped, LEC grown, p=2.3${\times}$10$^{16}$c $m^{-3}$). The Sulfur diffusion was carried out at 550$^{\circ}C$, 600$^{\circ}C$, 700$^{\circ}C$ for 4 hours in a sealed quartz ampule(～2ml in volume) containing 5mg I $n_2$ $S_3$ and Img of red phosphorus. The formed junction depth was below 0.5$\mu\textrm{m}$. After the removal of diffused layer on the rear surface of the wafer, the beak ohmic contacts to the p-side were made with a vacuum evaporation of An-Zn(2%) followed by an annealing at 450$^{\circ}C$ for 5 minutes in flowing Ar gas. The front contacts were made with a vacuum evaporation of Au-Ge(12%) followed by an annealing at 500$^{\circ}C$ for 3 minutes in flowing Ar gas. The remarkable sprctral response of the cells obtained at the region of 6000-8000${\AA}$ region. The open circuit voltage $V_{oc}$ , short circuit current density $J_{sc}$ , fill factor and conversion efficiency η of the fabricated pattern solar cells(diffusion condition : at 700$^{\circ}C$ for 4 hours) were 0.660V, 14.04㎃/$\textrm{cm}^2$, 0.6536 and 10.09%, respectively.y.

• Restorative Dentistry and Endodontics
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• v.21 no.2
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• pp.628-634
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• 1996

The purpose of this study was to investigate the effect of moisture on apical sealing properties of root canal. Fifty five single rooted human teeth were selected from maxillary and mandibular teeth. After removing crown portion at the cemento-enamel junction, all teeth were routinely prepared with step-back method. And then, the canals were dried with paper point and the teeth were randomly divided into 3 groups of 15 teeth each, and remaining 10 teeth were used as positive and negative control teeth : Group 1 were irrigated with 1ml of 95% alcohol and dried with air and paper point. Group 2 and 3 were intentionally contaminated with 0.05ml of 3.5% NaOCl or saliva, respectively. All the teeth were obturated with sealapex and gutta percha cone by lateral condensation technique, and covered with two coat of nail varnish after 48 hours of obturation. The teeth were immersed in india ink for 1 week and cleaned with methyl salicylate and then the degree of dye penetration were measured with stereomicroscope. The data were analyzed statistically by one-way ANOVA. The results were as follows : 1. All experimental groups showed varying degrees of dye penetration, and the mean degree of dye penetration was 0.1mm to 0.7mm. 2. Saliva contamination group(group 3) showed the highest amount of dye penetration, followed by NaOCl contamination group, then alcohol dried group, but there was no significant difference among three experimental groups. * This results suggest that there was no significant differences of apical leakage after canal obturation between alcohol dried canal and moisture present canals and the use of alcohol instead of paper point is unnecessary to dry the canals prior to canal filling. But other factors such as bacterial contamination and sealer discoloration by moisture must be considered in application of this results to clinical practice.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.680-684
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• 2018

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A $POCl_3$ diffusion doping process is used to produce a p-n junction solar cell device based on a polySi wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage($V_{oc}$) is 0.59 V and the short circuit current($I_{sc}$) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6 %, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage($V_{PC-AFM}$) at which the current is 0 A in the I-V characteristic curves increases sharply up to $18W/m^2$, peaking and slowly falling as light intensity increases. Here, $V_{PC-AFM}$ at $18W/m^2$ is 0.29 V, which corresponds to 59 % of the average $V_{oc}$ value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

• New & Renewable Energy
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• v.18 no.1
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• pp.29-34
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• 2022

The most prevalent cause of solar cell efficiency loss is reduced recombination at the metal electrode and silicon junction. To boost efficiency, a a SiO_X/poly-Si passivating interface is being developed. Poly-Si for passivating contact is formed by various deposition methods (sputtering, PECVD, LPCVD, HWCVD) where the ploy-Si characterization depends on the deposition method. The sputtering process forms a dense Si film at a low deposition rate of 2.6 nm/min and develops a low passivation characteristic of 690 mV. The PECVD process offers a deposition rate of 28 nm/min with satisfactory passivation characteristics. The LPCVD process is the slowest with a deposition rate of 1.4 nm/min, and can prevent blistering if deposited at high temperatures. The HWCVD process has the fastest deposition rate at 150 nm/min with excellent passivation characteristics. However, the uniformity of the deposited film decreases as the area increases. Also, the best passivation characteristics are obtained at high doping. Thus, it is necessary to optimize the doping process depending on the deposition method.

• Journal of the Korea Institute of Military Science and Technology
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• v.26 no.3
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• pp.227-233
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• 2023

In this paper, to substitute the existing TWTA(Travailing Wave Tube Amplifier) component in small radar system, we developed the Ku band SSPA(Solid-State Power Amplifier) based on the fabrication of power MMIC (Monolithic Microwave Integrated Circuit) chips. For the development of the 500 W SSPA, the 40 W-grade power MMIC was designed by ADS(Advanced Design System) at Keysight company with UMS GH015 library, and was processed by UMS foundry service. And 70 W main power modules were achieved the 2-way T-junction combiner method by using the 40 W-grade power MMICs. Finally, the 500 W SSPA was fabricated by the wave guide type power divider between the drive power amplifier and power modules, and power combiner with same type between power modules and output port. The electrical properties of this SSPA had 504 W output power, -58.11 dBc spurious, 1.74 °/us phase variation, and -143 dBm/Hz noise level.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.9
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• pp.535-540
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• 2017

The changes in the electrical characteristics of CMOS ICs due to coupling with a narrow-band electromagnetic wave were analyzed in this study. A magnetron (3 kW, 2.45 GHz) was used as the narrow-band electromagnetic source. The DUT was a CMOS logic IC and the gate output was in the ON state. The malfunction of the ICs was confirmed by monitoring the variation of the gate output voltage. It was observed that malfunction (self-reset) and destruction of the ICs occurred as the electric field increased. To confirm the variation of electrical characteristics of the ICs due to the narrow-band electromagnetic wave, the pin-to-pin resistances (Vcc-GND, Vcc-Input1, Input1-GND) and input capacitance of the ICs were measured. The pin-to-pin resistances and input capacitance of the ICs before exposure to the narrow-band electromagnetic waves were $8.57M{\Omega}$ (Vcc-GND), $14.14M{\Omega}$ (Vcc-Input1), $18.24M{\Omega}$ (Input1-GND), and 5 pF (input capacitance). The ICs exposed to narrow-band electromagnetic waves showed mostly similar values, but some error values were observed, such as $2.5{\Omega}$, $50M{\Omega}$, or 71 pF. This is attributed to the breakdown of the pn junction when latch-up in CMOS occurred. In order to confirm surface damage of the ICs, the epoxy molding compound was removed and then studied with an optical microscope. In general, there was severe deterioration in the PCB trace. It is considered that the current density of the trace increased due to the electromagnetic wave, resulting in the deterioration of the trace. The results of this study can be applied as basic data for the analysis of the effect of narrow-band high-power electromagnetic waves on ICs.

• Journal of the Korean Magnetics Society
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• v.20 no.4
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• pp.129-133
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• 2010

Two-layered ferromagnetic alloy films (NiFe, CoFe) with a Conetic (NiFeCuMo) intermediately soft magnetic layer of different thickness were investigated to correlate the coercivity values and magnetization process with the strength of saturation field of hard axis. Thickness dependence of the $H_{EC}$ (coercivity of easy axis), $H_{HS}$ (saturation field of hard axis.), and X (susceptibility) of NiFe and NiFeCuMo thin films for the glass/Ta(5 nm)/[CoFe or NiFe(5 nm-t/2)]/NiFeCuMo(t = 0, 4, 6, 8, 10 nm)/[CoFe or NiFe(5 nm-t/2)]/Ta(5 nm) films prepared by the ion beam deposition method was measured. The magnetic properties $H_{EC}$, $H_{HS}$, and X of two-layered ferromagnetic CoFe, NiFe films with a NiFeCuMo intermediately super-soft magnetic layer were strongly depended on the thickness of NiFeCuMo layer. The value of the coercivity and magnetic susceptibility of the NiFeCuMo film decreased by 25% and doubled relative to that of the NiFe film.