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http://dx.doi.org/10.4283/JKMS.2006.16.2.136

Characteristics of Magnetic Tunnel Junctions Incorporating Nano-Oxide Layers  

Chu, In-Chang (Department of materials Science and Engineering, Korea University)
Chun, Byong-Sun (Department of materials Science and Engineering, Korea University)
Song, Min-Sung (Department of materials Science and Engineering, Korea University)
Lee, Seong-Rae (Department of materials Science and Engineering, Korea University)
Kim, Young-Keun (Department of materials Science and Engineering, Korea University)
Publication Information
Journal of the Korean Magnetics Society / v.16, no.2, 2006 , pp. 136-139 More about this Journal
Abstract
The tunneling magnetoresistance (TMR) ratios of magnetic tunnel junctions (MTJs), in general, decrease abruptly above 250$^{\circ}C$ due to Mn interdiffusion from an antiferromagnet IrMn layer to a ferromagnetic CoFe and/or a tunnel barrier. To improve thermal stability, we prepared MTJs with nano-oxide layers. Using a MTJ structure consisting of underlayer CoNbZr 4/bufferlayer CoFe 10/antiferromaget IrMn 7.5/pinned layer CoFe 3/tunnel barrier AlO/freelayer CoFe 3/capping CoNbZr 2 (nm), we placed a nano-oxide layer (NOL) into the underlayer or bufferlayer. Then, the thermal, structural and magneto-electric properties were measured. The TMR ratio, surface flatness, and thermal stability of the MTJs with NOLs were promoted.
Keywords
magnetic tunnel junction; nano-oxide layer; thermal stability; surface flatness;
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