• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.6A
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• pp.818-824
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• 2000

For the purpose of improving the stopband characteristics, the filter structure having single or double inserted metal plates in the waveguide of a reduced width have been widely stdudied so far. Usually such structures have a waveguide junction discontinuity between two waveguides of different widths. In designing such structures, we should always minimize the insertion loss due to the juction discontinuity. Besides it is difficult to fabricate the junction with desired accuracy. Here we consider new structure of tripple metal insert filter without the junction discontinuity problem, which is more suitable for mass production. An optimization procedure is taken with manufacturing error 0.1mm of inserted metal length. The theory agrees well with experimental data. so, it is show that fabrication of triple metal insert filter is more profitabel by optimization process.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.6
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• pp.38-48
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• 1993

A recessed n-p Juction diode with the self-aligned sturcture is proposed and fabricated by using the polysilicon as an n$^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar divice and the n$^{+}$ polysilicone mitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition. As$^{+}$ dose for the doping of the polysilicon and the annealing condition using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS and the electrical characteristics are analyzed in terms of the ideality factor of diode (n), contact resistance and reverse leakage current. In addition, n$^{+}$-p junction diodes are formed by using the amorphous silicon (of combination of amorphous and polysiliocn) instead of polysilicon and their characteristics are compared with those of the standard sample. The As$^{+}$ dose for the formation of good junction is about 1~2${\times}10^{16}cm^{2}$ at given RTA conditions (1100.deg. C, 10sec).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.152-153
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• 1994

A recessed $n^{+}$-p junction diode with the serf-aligned structure is proposed and fabricated by using the polysilicon as an $n^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar device and the $n^{+}$ polysilicon emitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition $As^{+}$ dose for the doping of the polysilicon, and the annealing using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS. The eleotrical characteristics are analyzed in trims of the ideality factor of diode (n), contact resistance arid reverse leakage current. The $As_{+}$ dose for the formation of good junction is current. The $As^{+}$ dose for the formation of goodjunctions is about 1∼2${\times}$$10^{16}$$cm^{-2}$ at given RTA condition ($1100^{\circ}C$, 10 sec). The $n^{+}$-p structure is successfully applied to the self-aligned bipolar device adopting a single polysilicon technology.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.207-212
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• 2021

The mechanical and electrical characteristics can be improved in 3D stacked IC technology which can accomplish the ultra-high integration by stacking more semiconductor chips within the limited package area through the Cu direct bonding method minimizing the performance degradation to the bonding surface to the inorganic compound or the oxide film etc. The surface was treated in a ultrasonic washer using a diamond abrasive to remove other component substances from the prepared cast plate substrate surface. FE-SEM was used to analyze the bonding characteristics of the bonded copper substrates, and the cross section of the bonded Cu conjugates at the sintering junction temperature of 100 ℃, 150 ℃, 200 ℃, 350 ℃ and the pressure of 2303 N/cm² and 3087 N/cm². At 2303 N/cm², the good bonding of copper substrate was confirmed at 350 ℃, and at the increased pressure of 3087 N/cm², the bonding condition of Cu was confirmed at low temperature junction temperature of 200 ℃. However, the recrystallization of Cu particles was observed due to increased pressure of 3087 N/cm² and diffusion of Cu atoms at high temperature of 350 ℃, which can lead to degradation in semiconductor manufacturing.

• Fire Science and Engineering
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• v.33 no.1
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• pp.105-112
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• 2019

In this study, an architectural acoustics simulation was conducted to examine the clear and uniform transmission of emergency broadcasting sound in a T junction corridor space. The sound absorption performance of the corridor space and the location and spacing of the loudspeaker for emergency broadcasting were varied. The distribution of the sound pressure level and the distribution of sound transmission indices (STI, RASTI) were compared. The simulation showed that the loudspeaker for emergency broadcasting should be installed approximately 10 m from the center of the T junction corridor connection for clear voice transmission. Narrowing the 25 m installation interval of the NFSC shows that an even clearer and sufficient volume of emergency broadcast sound can be delivered evenly.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.1
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• pp.146-157
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• 2018

Over the last 10 years, the number of disasters has been increasing in Korea. As a result, the need for temporary residences or shelters for disaster conditions is increasing. In this study, post-disaster refugees housing was developed using lightweight composite panels that are lighter than the materials that make up the existing shelter. To accomplish this, the structural performance of the lightweight composite panel was validated. Among the performance tests on the panels, the transverse load test was conducted according to the ASTM E 72 criteria. As a result of the experiment, when each specimen was subjected to a uniformly distributed load, the allowable load was determined according to the span. All the experiments were ended due to a loss of adhesive at the junction of the skin and core. Further analysis was conducted to calculate the shear stress when the junction was dropped. The mean shear stress at the adhesive surface of a specimen, 150 mm and 200 mm in thickness, was 0.0170MPa and 0.0156MPa, respectively. This suggests that similar values were obtained from panels of equal thickness. In addition, this stress provides a criterion of judgment that could be used to inspect the structural performance of the panels. The performance of the panel was evaluated based on the allowable load, but it may be possible to increase the strength of the lightweight composite panel by improving the joining method to avoid separation from the junction.

• Journal of the Korean Geotechnical Society
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• v.28 no.7
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• pp.55-65
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• 2012

Total reduction factor that is used when calculating allowable tensile strength of geogrids is made by multiplying the installation damage reduction factor ($RF_{ID}$), chemical degradation reduction factor ($RF_D$), and creep reduction factor ($RF_{CR}$) etc. In case of a model estimating allowable tensile strength considering reduction factor over the short-term tensile strength of geogrids, it has a limit of not considering interaction force between reduction factors. Junction strength comes to be reduced by installation damages or chemical degradation in the same way as tensile strength. Single junction test method cannot properly test damaged samples and shows large deviations as it does not consider scale effect. Besides, regarding calculating shear strength, no reasonable study on reduction factors was conducted yet. Therefore, in this study, reduction factors that may affect the long-term performance of geogrids were revaluated considering various conditions and accurate long-term allowable tensile strength was calculated considering interrelation between reduction factors. Creep results after installation damage and chemical resistance test showed lower value than calculated value according to GRI GG-4. After the installation damage test and the chemical resistance test, the reduction factor of junction strength was less than that of tensile strength. Shear strength before and after installation damage showed no change or increase.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.3
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• pp.138-145
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• 2012

The material used in this study is dielectric and ferrite. Because of the unique characteristics of the material, it is easily exposed to external shocks and pressure, which cause damage to the product. However, after being processed under high-temperature environment repeatedly, the mechanical strength of the product is greatly increased due to the change of the electrical properties. In this paper, dielectric and bonded ferrite material was tested for the material properties. The equipment for this experiment was produced and tested to allow Cylindrical and Three-dimensional geometry of the product for the vacuum deposition. For Cylindrical shape of the product, in order to obtain the equivalent film thickness, the device is constructed in a vacuum chamber which gives arbitrary revolving and rotating capability. The electrical performance of the product is obtained through this process as well. However, as mentioned above, with repeating processes under high temperature and exposure to external environment, the product is easy to be broken. This experiment has enabled us to find out a stable condition to apply the communication of the RF high frequency to each of the core elements, such as Ferrite and Dielectric which is then used for the mechanical strength of the Raw material, hetero-junction material, Hetero-junction Ag Coating material and hetero-junction Ag Coating SiO2 Coating material respectively.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.45-50
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• 2014

In this paper, we propose a super-junction MOSFET (SJ MOSFET) fabricated through a simple pillar forming process by varying the Si epilayer thickness and doping concentration of pillars using SILVACO TCAD simulation. The design of the SJ MOSFET structure is presented, and the doping concentration of pillar, breakdown voltage ($V_{BR}$) and drain current are analyzed. The device performance of conventional Si planar metal-oxide semiconductor field-effect transistor(MOSFET), Si SJ MOSFET, and SiGe SJ MOSFET was investigated. The p- and n-pillars in Si SJ MOSFET suppressed the punch-through effect caused by drain bias. This lead to the higher $V_{BR}$ and reduced on resistance of Si SJ MOSFET. An increase in the thickness of Si epilayer and decrease in the former is most effective than the latter. The implementation of SiGe epilayer to SJ MOSFET resulted in the improvement of $V_{BR}$ as well as drain current in saturation region, when compared to Si SJ MOSFET. Such a superior device performance of SiGe SJ MOSFET could be associated with smaller bandgap of SiGe which facilitated the drift of carriers through lower built-in potential barrier.

• Journal of the Korean Vacuum Society
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• v.22 no.4
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• pp.211-217
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• 2013

Two types of organic thin film solar cell devices with bulk hetero-junction (BHJ) structure were fabricated on plastic substrates using conjugated polymers of $PCDTBT:PC_{71}BM$ and $PTB7:PC_{71}BM$ blended as active channel layer. Time-variant characteristics of the organic thin film solar cell devices were investigated: short circuit current density ($J_{SC}$); open circuit voltage ($V_{OC}$); ; fill factor (FF); power conversion efficiency (PCE, ŋ). All the performance parameters were degraded by progress of the measurement time, while $V_{OC}$ showed the most drastic decrease with time. Possible factors to cause the time-variant alteration of performance parameters were discussed to be clarified.