• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.533-536
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• 1998

The electrical characteristics of NMOSFETs with asymmetrical source/drain regions have been expermentally investigated using test devices fabricated by $0.35\mu\textrm{m}$ CMOS technology. The performance degradation for asymmetric transistor and its causes are analyzed. The parasitic resistances, such as series resistance of active regions and silicide junction contact resistance, are distributed in parallel along the channel. Depending on source/drain geometry, the array of those resistances is changed, that results the various electrical properties.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.7
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• pp.1271-1281
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• 2000

본 논문에서는 모드 매칭법과 일반 산란계수법을 이용하여 경사진 금속봉이 도파란내에 놓여 있을 때 반사 특성과 투과 특성을 구하였으면, 이 결과를 이용하여 동축선로와 도파관과의 접합에 응용할 수 있도록 최적의 조건을 도출하였다. 여기서 반사특성은 기울기사 클수록 뚜렷아세 개선되어서 최소-40dB까지 감소하였고, 투과특성은 최적의 각도 45$^{\circ}$에서 최대의 특성을 얻을 수 있었다. 또한, 이를 HFSS의 결과와 비교하였을 때 잘일치하는 결과를 얻을 수 있었다.

• Journal of Information Display
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• v.6 no.1
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• pp.17-21
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• 2005

We explored a new way of designing dynamic logic gates with low temperature polysilicon thin film transistors to increase the speed. The proposed architecture of logic gates utilizes the structural advantage of smaller junction capacitance of thin film transistors. This method effectively blocks leakage of current through the thin film transistors. Furthermore, the number of transistors used in logic gates is reduced thereby reducing power consumption and chip area. Through HSPICE .simulation, it is confirmed that the circuit speed is also improved in all logic gates designed.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.139-141
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• 2015

Contact resistance of interface between the channel layers and various S/D electrodes was investigated by transmission line method. Different electrodes such as Ti/Au, a-IZO, and multilayer of a-IGZO/Ag/a-IGZO were compared in terms of contact resistance, using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes showed good performance and low contact resistance due to the homo-junction with channel layer.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1370-1371
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• 2006

An electrostatic discharge (ESD) protection device, so called, N-type extended drain silicon controlled rectifier (NEDSCR) device, was analyzed for high voltage I/O applications. A conventional NEDSCR device shows typical SCR-like characteristics with extremely low snapback holding voltage. This may cause latchup problem during normal operation. However, a modified NEDSCR device with proper junction / channel engineering demonstrates itself with both the excellent ESD protection performance and the high latchup immunity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.371-374
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• 2015

This paper suggests a high performance lateral super barrier rectifier (Lateral SBR) device which has the advantages of both Schottky diode and pn junction, that is, low forward voltage and low leakage current, respectively. Advantage of the proposed lateral SBR is that it can be easily implemented and integrated in current BCD platform. As a result of simulation using TCAD, BVdss = 48 V, $V_F=0.38V$ @ $I_F=35mA$, T_j = $150^{\circ}C$ were obtained with very low leakage current characteristic of 3.25 uA.

• ETRI Journal
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• v.31 no.5
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• pp.601-603
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• 2009

This letter presents a high performance 2.4 GHz two-stage power amplifier (PA) operating in the temperature range from $-30^{\circ}C$ to $+85^{\circ}C$ for IEEE 802.11g, wireless local area network application. It is implemented in InGaP/GaAs hetero-junction bipolar transistor technology and has a bias circuit employing a temperature compensation technique for error vector magnitude (EVM) performance. The technique uses a resistor made with a base layer of HBT. The design improves EVM performance in cold temperatures by increasing current. The implemented PA has a dynamic EVM of less than 4%, a gain of over 26 dB, and a current less than 130 mA below the output power of 19 dBm across the temperature range from $-30^{\circ}C$ to $+85^{\circ}C$.

• Journal of the Korean Society of Safety
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• v.11 no.2
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• pp.52-59
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• 1996

This paper presents a new approach for assessing the dynamic reliability in a complex system such as a nuclear power plant. The method is applied to a dynamic analysis of the potential accident sequences which may occur during mid-loop operation. Mid-loop operation is defined as an operation to make RCS water level below the top of the flow area of the hot legs at the junction with the reactor vessel for repairs and maintenance of steam generators and reactor coolant pumps for a specific time. The Idea behind this approach consists of both the use of the concept of the performance achievement/requirement correlation and of a dynamic event tree generation method. The assessment of the system reliability depends on the determination of both the required performance distribution and the achieved performance distribution. The quantified correlation between requirement and achievement represents a comparison between two competing variables. It is demonstrated that this method is easily applicable and flexible in that it can be applied to any kind of dynamic reliability problem.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.131-134
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• 2002

In this work, we have developed a systematic way of utilizing the basic design tools for superconductive electronics. This include WRSPICE, XIC, margin program, and L-meter. Since the high performance analog-to- digital converter can be built with Rapid Single Flux Quantum (RSFQ) logic circuits the development of superconductive analog-to-digital converter has attracted a lot of interests as one of the most prospective area of the application of Josephson Junction technology. One of the main advantages in using Rapid Single Flux Quantum logic in the analog-to-digital converter is the low voltage output from the Josephson junction switching, and hence the high resolution. To design an 1-bit analog-digital converter, first we have used XIC tool to compose a circuit schematic, and then studied the operational principle of the circuit with WRSPICE tool. Through this process, we obtained the proper circuit diagram of an 1-bit analog-digital converter circuit. Based on this circuit we performed margin calculations of the designed circuits and optimized circuit parameters. The optimized circuit was laid out as a mask drawing. Inductance values of the circuit layout were calculated with L-meter. Circuit inductors were adjusted according to these calculations and the final layout was obtained.

• Journal of electromagnetic engineering and science
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• v.5 no.1
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• pp.8-13
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• 2005

The InGaP/GaAs hetero-junction bipolar transistor(HBT) monolithic voltage-controlled dielectric resonator oscillator(VCDRO) is first demonstrated for a Ku-band low noise block down-converter(LNB) system. The on-chip voltage control oscillator core employing base-collector(B-C) junction diodes is proposed for simpler frequency tuning and easy fabrication instead of the general off-chip varactor diodes. The fabricated VCDRO achieves a high output power of 6.45 to 5.31 dBm and a wide frequency tuning range of ]65 MHz( 1.53 $\%$) with a low phase noise of below -95dBc/Hz at 100 kHz offset and -115 dBc/Hz at ] MHz offset. A]so, the InGaP/GaAs HBT monolithic DRO with the same topology as the proposed VCDRO is fabricated to verify that the intrinsic low l/f noise of the HBT and the high Q of the DR contribute to the low phase noise performance. The fabricated DRO exhibits an output power of 1.33 dBm, and an extremely low phase noise of -109 dBc/Hz at 100 kHz and -131 dBc/Hz at ] MHz offset from the 10.75 GHz oscillation frequency.