• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.1
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• pp.7-12
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• 1984

In this paper, the authors applied the method of hydrogen chloride gettering oxidation to fabricate the low noise bipolar transistor. The results of measurements of the effect of guttering on the variation of flicker noise spectral intensity for variable HCI concentrations indicate that flicker noise in bipolar than-sistor is dependent on the surface condition and that the gettering in a mixture of 2% HCI in oxidation produced the optimal results in the fabrication of the low noise device. In addition, it was also noted that the PSG layer formed by the emitter source (phosphorus) did not have so much guttering effect as in the process with HCl getterinng.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.3
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• pp.422-426
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• 2012

Transient radiation is emitted during a nuclear explosion. Transient radiation causes a fatal error in the CMOS circuit as a Upset and Latch-up. In this paper, transient radiation NMOS, PMOS, INVERTER SPICE model was proposed on the basisi of transient radiation effects analysis using TCAD(Technology Computer Aided Design). Photocurrent generated from the MOSFET internal PN junction was expressed to the current source and Latch-up phenomenon in the INVERTER was expressed to parasitic thyristor for the transient radiation SPICE model. For example, the proposed transient radiation SPICE model was applied to CMOS NAND circuit. SPICE simulated characteristics were similar to the TCAD simulation results. Simulation time was reduced to 120 times compared to TCAD simulation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.294-294
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• 2010

Over the last decade, dye-sensitized solar cell (DSSC) has attracted much attention due to the high solar-to-electricity conversion efficiency up to 10% as well as low cost compared with p-n junction photovoltaic devices. DSSC is composed of mesoporous TiO2 nanoparticle electrodes coated with photo-sensitized dye, the redox electrolyte and the metal counter electrode. The performances of DSSC are dependent on constituent materials and interface as well as device structure. Replacing the heavy glass substrate with plastic materials is crucial to enlarge DSSC applications for the competition with inorganic based thin film photovoltaic devices. One of the biggest problems with plastic substrates is their low-temperature tolerance, which makes sintering of the photoelectrode films impossible. Therefore, the most important step toward the low-temperature DSSC fabrication is how to enhance interparticle connection at the temperature lower than $150^{\circ}C$. In this talk, the key issues for high efficiency plastic solar cells will be discussed, and several strategies for the improvement of interconnection of nanoparticles and bendability will also be proposed.

• Progress in Superconductivity
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• v.9 no.2
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• pp.157-161
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• 2008

Due to high speed operations and ultra low power consumptions RSFQ logic circuit is a very good candidate for future electronic device. The focus of the RSFQ circuit development has been on the advancement of analog-to-digital converters and microprocessors. Recent works on RSFQ ALU development showed the successful operation of an 1-bit block of ALU at 40 GHz. Recently, the study of an RSFQ analog-to-digital converter has been extended to the development of a single chip RF digital receiver. Compared to the voltage logic circuits, RSFQ circuits operate based on the pulse logic. This naturally leads the circuit structure of RSFQ circuit to be pipelined. Delay time on each pipelined stage determines the ultimate operating speed of the circuit. In simulations, a two junction Josephson transmission line's delay time was about 10 ps, a splitter's 14.5 ps, a switch's 13 ps, a half adder's 67 ps. Optimization of the 4-bit ALU circuit has been made with delay time consideration to operate comfortably at 10 GHz or above.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.114-114
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• 2011

We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of $150^{\circ}C$ by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good flexibility, transparent in the visible range, and excellent field effect mobility (> 7cm2/$V{\cdot}s$) under low voltage operation (from -1 to 3V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.2
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• pp.24-34
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• 1979

In this paper characteristics of the Ebers-Mull , charge control and Linvill iumped models are reviewed. A 1%eery for systematically modeling solid state device by F.A Lind helm and D. J. Hamilton is discussed in detail. Nonlinear and linear modeds for the junction field effect transistor are derived from the systematic modeling theory. Computer program for the transient analysis is develooped and application of the program to the RC amplifler shows guod results.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.2
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• pp.230-234
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• 1996

A new trenched Hybrid Schottky INjection Field Effect Transistor (HSINFET) is proposed and verified by 2-D semiconductor device simulation. The feature of the proposed structure is that the hybrid Schottky injector is implemented at the trench sidewall and p-n junction injector at the upper sidewall and bottom of a trench. Two-dimensional simulation has been performed to compare the new HSINFET with the SINFET, conventional HSINFET and lateral insulated gate bipolar transistor(LIGBT). The numerical results shows that the current handling capability of the proposed HSINFET is significantly increased without sacrificing turn-off characteristics. The proposed HSINFET exhibits higher latch-up current density and much faster switching speed than the lateral IGBT. The forward voltage drop of the proposed HSINFET is 0.4 V lower than that of the conventional HSINFET and the turn-off time of the trenched HSINFET is much smaller than that of LIGBT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.17-20
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• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.306-307
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• 2017

본 논문에서는 태양광모듈과 전력변환장치간의 접속장치로 사용된 전력용 반도체 스위칭 소자의 소프트 스타팅 기법을 통해 초기 돌입전류를 저감하는 알고리즘을 제안하고자 한다. 태양광 모듈의 경우, 릴레이나 DC차단기 등을 사용하여 전력변환장치와 연동하는 것이 일반적이나, 이 경우 태양광모듈의 수명과 접속장치의 전압 강하 및 응답성 등의 문제를 야기한다. 또한, 전력변환장치 출력단의 커패시터에 초기 동작 시 과도한 동일전류가 발생하게 되고 이는 태양광모듈의 과전류 현상을 발생시켜 모듈의 수명과 더불어 퓨즈의 차단 및 발열 등 비이상적인 현상을 발생시킨다. 따라서, 본 논문에서는 이러한 문제점을 해결하고자 스위칭 소자를 사용한 접속장치 적용하였고, 소프트 스타팅 기법을 이용하여 돌입전류를 저감하고자 한다. 제안한 알고리즘의 경우, 시뮬레이션을 통해서 검증하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.28-28
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• 2010

Photoelectrochemical solar cells such as dye-sensitized cells (DSSCs), which exhibit high performance and are cost-effective, provide an alternative to conventional p-n junction photovoltaic devices. However, the efficiency of such cells plateaus at 11-12%, in contrast to their theoretical value of 33%. Improvements in efficiency can only occur through a fundamental understanding of the underlying physics, materials, and device designs of DSSCs. A photoelectrode consisting of semiconducting oxide nanoparticles and a transparent conducting oxide electrode (TCO) is a key component of DSSC and design of photoelectrode materials is one of promising strategies to improving energy conversion efficiency. We introduce monodisperesed $TiO_2$ nanoparticles prepared by forced hydrolysis method and their superiority as photoelectrode materials was characterized with aids of optical and electrochemical analysis. Multi-layered TCO materials are also introduced and their feasibility for use as photoelectrodes is discussed in terms of optical absorption and charge collecting properties.