• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.585-588
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• 1998

We investigated the ultra-low energy B, P, and As ion implantation using ungraded MDRANGE code to form nanometer junction depths. Even at the ultra-low energies that were simulated in paper, it was found that channeling cases must be carefully considered. In the cases of B, channeling occurred above 500 eV, in the cases of P, channeling occurred above 1 keV, and in the cases of As, channeling occurred above 2 keV. Comparing 2D dopant profiles of 1 keV B, 2 keV P, and 5 keV As with tilts, we demonstrated that most channeling cases occurred not lateral directions but depth directions. Through thus results, even below 5 keV energy ion implant considered here, it is estimated that channeling effects are important in the formation of nanometer junction depths.

• ETRI Journal
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• 제34권1호
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• pp.134-137
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• 2012

Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.

• 전자공학회논문지D
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• 제35D권7호
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• pp.94-101
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• 1998

To form 0.2 .mu.m p$^{+}$-n junctions, BF$_{2}$ ions with the energy of 20keV and the dose of 2*10$^{15}$ cm$^{-2}$ were implanted into the crystalline and preamorphized silicon substrates. Th epreamorphization was performed using 45keV, 3*10$^{14}$ cm$^{-2}$ As or Ge ions. Th efurnace annealing and rapid thermal annealing were empolyed to annihilate the implanted damage and to activate the implanted boron ions.The junction properties were analyzed with the measured values of the junction depth, sheet resistances, residual defects, and leakage currents. The thermal cycle of furnace annela followed by rapid thermal annela shows better characteristics than the annealing sequence of rapid thermal anneal and furnace annela.Among the premorphization species, Ge ion exhibited the better characteristics than the As ion.n.

• 전자공학회논문지A
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• 제30A권11호
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• pp.113-121
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• 1993

In the formation of the shallow p$^{+}$-n junction, the preamorphization method by As$^{+}$ ions was applied in order to avoid the boron channeling effect which is occured during the B$^{+}$ implantation especially with low energy. By As$^{+}$ pre-implant with 60KeV energy and 2*10$^{14}$ cm$^{-2}$ dose, the channelinf of B$^{+}$ ions implanted with 10keV/1.5*10$^{14}$ cm$^{-2}$ can be avoded completely. After the RTA of 1050.deg. C and 10sec, the junction depth was 0.14.mu.m, the leakage current was 20nA/cm$^{2}$(at-5V bias) and the sheet resistance was 107.OMEGA./ㅁ. And the preamorphized Si layer was changed into the perfect crystal si after the RTA.r the RTA.

• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.708-712
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• 2004

Shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes. The dopant implantation was performed into the crystalline substrates using BF$_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth and sheet resistance. A new simulator is designed to model boron diffusion in silicon. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using initial conditions and boundary conditions, coupled diffusion equations are solved successfully. The simulator reproduced experimental data successfully.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 춘계종합학술대회
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• pp.349-352
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• 2001

본 논문은 기가 SRAM급 이상의 초고집적을- 위한 0.1$\mu\textrm{m}$의 설계치수를 갖는 MOSFET의 게이트 영역에서 활성 부분의 면저항을 감소시키기 위해 n영역으로 비소를 이온 주입하였다. 어닐링은 급속 열처리 공정 방법과 엑시머 레이져 어닐링 방법을 이용하였으며, 극히 얕은 접합의 형성이 가능하였다. 얕은 접합 형성 깊이는 10~20nm이며, 비소의 주입량은 2$\times$$10^{14}$ $\textrm{cm}^2$이고, 레이져는 엑시머이며 소스는 KrF로 파장은 248mm로 어닐링 하였다. 극히 얕은 P/N$^{+}$ 접합 깊이가 15nm이며, 이때 1k$\Omega$/$\square$의 낮은 면저항 특성을 갖는 결과가 나타났다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.248-250
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• 1987

Transparent CdS films with low electrical restivity on glass substrates were prepared by coating a CdS slurry which contained 10 wt.% $CdCl_2$, and sintering in a nitrogen atmosphere at $600^{\circ}C$ for 2hr. All-polycrystalline CdS/CdTe solar cells were fabricated by coating CdTe slurries, which contained 1.0 or 4.5 wt.% $CdCl_2$, on the sintered CdS films and sintering at $700^{\circ}C$ for various periods of sintering. The spectral responses of the sintered CdS/CdTe solar cells were measured and compared with theoretically calculated quantum efficiency. The spectral responses of the sintered CdS/CdTe solar cells in the short-wavelength region decreases with-increasing sintering time. The poor response in this region is attributed to the existence of the Cd-S-Te solid solution in the compositional junction. The decrease in the maximum response in the long-wavelength region as the sintering exceeds certain time appears to be caused by the increase in the depth of the buried homo junction and by the increase in the series resistance. The $CdCl_2$ in the CdTe layer during sintering enchances the interdiffusion of S, Te or donor impurities across the metallurgical Junction causing the formation of deeper n-p junction in the CdTe layer.

• 한국진공학회지
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• 제17권6호
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• pp.555-559
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• 2008

순방향 전압-온도 (forward voltage-temperature)법을 이용하여 양자점 레이저 다이오드의 접합온도를 측정하였다. 식각 깊이가 깊은 mesa 구조의 경우 입력전류에 대한 접합온도의 증가율은 0.05 K/mA인 반면, 식각 깊이가 낮은 mesa 구조의 경우 0.07 K/mA로서 상대적으로 높게 측정되었다. 깊은 mesa 구조에서의 상대적으로 낮은 접합온도 증가율은 mesa 측면 방향으로의 열확산 효과 때문인 것으로 설명된다.

• 대한방사선방어학회:학술대회논문집
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• 대한방사선방어학회 2009년도 춘계 학술발표
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• pp.124-125
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• 2009

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• 대한방사선치료학회지
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• 제29권2호
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• pp.93-100
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• 2017

목 적: 쇄골상부림프절(Supraclavicular Lymph Nodes, SCL)을 포함한 유방암 방사선 치료 시 조사야에 인접한 다엽 콜리메이터(Multileaf Collimator, MLC)가 접합부 선량에 미치는 영향을 평가하고자 한다. 대상 및 방법: 접선 조사 기법을 이용하여 SCL을 포함한 유방암 방사선 치료 환자 30명을 대상으로 120-leaf Millennium MLC가 장착된 21EX-S의 6 MV 광자선 에너지를 사용하였다. 치료계획은 유방조직과 SCL 조사야 접합부에 MLC가 모두 위치한 Plan1, 유방조직과 SCL 조사야에 MLC가 각각 위치한 Plan2, Plan3, 그리고 MLC를 모두 Retract 한 Plan4로 하였으며, SCL 조사야는 모든 계획에서 콜리메이터 각도를 $0^{\circ}$, $270^{\circ}$로 나누어 수립하였다. 치료계획에 대한 평가는 접합부 3 cm 깊이 선량(D3 cm)의 평균값으로 비교하였고, Map-CHECK을 이용하여 각 치료계획별 접합부 선량을 측정하였다. 결 과: 치료계획 비교 결과, D3cm의 평균값은 SCL 콜리메이터 $0^{\circ}$에서 4131.1, 4215.9, 4351.4, 4423.0 cGy였고, $270^{\circ}$에서 4044.3, 4246.7, 4291.1, 4441.2 cGy로 나타났다. 콜리메이터 각도에 따른 평균 선량 변화는 SCL 조사야에 MCL가 위치한 Plan1, Plan3 이 MLC가 Retract된 나머지에 비해 크게 나타났다. 그리고 접합부 선량 측정값 또한 치료계획과 같은 경향을 보였다. 결 론: 본 연구를 통해 SCL을 포함한 유방암 방사선 치료계획 시, MLC를 접합부로부터 5 mm Retract 시켜줌으로써 MLC가 접합부 선량에 미치는 영향을 줄일 수 있을 것으로 사료된다.