• Journal of Sensor Science and Technology
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• v.10 no.3
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• pp.196-206
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• 2001

Real temperature profiles of a planar chromel-alumel mutli-junction thermal converter(TC 1) were measured by thermal image. Temperature profiles as a function of input power of thermal converters(TC 1${\sim}$TC 6) were simulated by 3-dimensional ANSYS program based on finite element method. Temperature difference between the hot junction and the cold junction for TC 1 was smallest and largest for TC 6 and correspondingly, he voltage response for TC 1 and TC 6 showed the smallest value of 3.09 mV/mW and the largest value of 4.03 mV/mW, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.1
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• pp.239-245
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• 2013

The temperature monitoring of power cable and cable junction point is the necessary link of the safe and reliable operation of the power system. Many kinds of cables and high voltage junction points are easy to exposed continuous vibrations and momentary impulse in industry field especially power plant industries. This system can predict the overheating of the electric cable interface and the possibility of all kinds of accident, and it helps for eliminating the hazards of electric cable interface and provides the effective guarantee for the safety operation. In order to avoid the faults of the inconvenience of installation and maintenance and the high cost of application, this system used small and contactless IR sensor module. The low power consumption is used in the system. The goal of this study is the low cost and on-line reliable monitoring of power cable and junction point temperature.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.458-464
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• 2017

A magnetic tunnel junction (MTJ) based ternary content addressable memory (TCAM) is proposed which provides non-volatility. A unit cell of the TCAM has two MTJ's and 4.875 transistors, which allows the realization of TCAM in a small area. The equivalent resistance of parallel connected multiple unit cells is compared with the equivalent resistance of parallel connected multiple reference resistance, which provides the averaging effect of the variations of device characteristics. This averaging effect renders the proposed TCAM to be variation-tolerant. Using 65-nm CMOS model parameters, the operation of the proposed TCAM has been evaluated including the Monte-Carlo simulated variations of the device characteristics, the supply voltage variation, and the temperature variation. With the tunneling magnetoresistance ratio (TMR) of 1.5 and all the variations being included, the error probability of the search operation is found to be smaller than 0.033-%.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.18 no.1
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• pp.31-37
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• 2006

The present study has been experimentally investigated the effect of geometric and operating parameters on the two-phase flow distribution of refrigerants in a horizontal T-junction. The operating parameters were the kind of refrigerants (R-22, R- l34a, and R-410A), saturated temperature, and the inlet mass flux and quality. The geometric parameters were the tube diameter and the tube diameter ratio. The measured data of refrigerants were compared with the values predicted using the models developed by several researchers for air/water or steani/water two-phase flow. Among the operating parameters, the inlet Quality was the most sensitive to the mass flow rate ratio. Between the geometric parameters, the tube diameter ratio was more sensitive than tube diameter.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.11 s.242
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• pp.1503-1508
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• 2005

Scanning Thermal Microscope (STU) has been known for its superior resolution for local temperature and thermal property measurement. However, commercially available STU probe which is the key component of SThM does not provide resolution enough to explore nanoscale thermal phenomena. Here, we developed a SThM probe fabrication process that can achieve spatial resolution around 50 m. The batch-fabricated probe has a thermocouple junction located at the end of the tip. The size of the thermocouple junction is around 200 m and the distance of the junction from the very end of the tip is 150 m. The probe is currently being used for nanoscale thermal probing of nano-material and nano device.

• 전기의세계
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• v.20 no.2
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• pp.9-14
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• 1971

N type single crystal CdTe is grown by doping Gallium as 0.01 percent, by using zone melting method. And also p type CdTe is grown by doping Ag, Sb, and Te as 0.01%. Resistivity and Concentration of the n.p type single crystal are measured. And then Li ions are implanted on the n type CdTe by high voltage accellerator with different amount of impurity. Indium is evaporated on the p type in high vacuum condition. These sample are heated so as to make P-N Junction in Argon gas flow. Electrical properties for solar cell are investigated. Photovoltage and current are found to be varyed according to following factor: 1) amount of impurity 2) diffusion thickness 3) temperature and time for making P-N junction. Efficiency of the P-N Junction evaporated Indium is 6.5 when it is heated at 380.deg. C for 15 minutie.

• Journal of Magnetics
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• v.6 no.4
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• pp.126-128
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• 2001

The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300$\^{C}$, reaching ∼46%. A TEM image reveals a structural change in the interface of A1$_2$O$_3$layer for the MTJ annealed by RTA at 300$\^{C}$. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the magnetoresistive properties of MTJs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.51-54
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• 2009

Transparent Cuprous oxide film was deposited by rapid thermal oxidation (RTO) of Cu at $500^{\circ}C$/45s condition on textured single-crystal n-Si substrate to form $Cu_2O$/n-Si heterojunction photodiode. The Hall effect measurements for the $Cu_2O$ films showed a p-type conductivity. The photovoltaic and electrical properties of the junction at room temperature were investigated without any post-deposition annealing. I-V characteristics revealed that the junction has good rectifying properties. The C-V data showed abrupt junction and a built-in potential of 1 V. The photodiode showed good stability and high responsivity in the visible at three regions; 525 nm, 625-700 nm, and 750nm denoted as regions A, B, and C, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.86-86
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• 2012

The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.263-267
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• 1998

In this study, we have fabricated in-situ multilayer $YBa_2Cu_3O_{7-\delta}$/$SrTiO_{3}$/$YBa_2Cu_3O_{7-\delta}$ ramp edge type junctions by using a metal mask and pulsed laser deposition method and studied the junction properties. The junctions showed RSJ-like I-V characteristics. The normal state junction resistance R, of $18 \omega$ was nearly constant with temperature. The dc-SQUID sensors fabricated with the junctions show a sensitivity that transfer function dV/$d\Phi$)~$22\mu$V/$\Phi_{0}$, indicating that the in-situ ramp edge type junction is potentially useful for sensor application.