• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.167-171
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• 2000

Emitter structure effects on the characteristics of AlGaAs/GaAs HBTs have been investigated. Cut-off frequency and maximum oscillation frequency were changed with emitter dimension, and it was attributed to the variation of resistance and junction capacitance with emitter structure. Emitter perimeter and junction area also affected the high frequency performance of HBTs.

• Corrosion Science and Technology
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• v.16 no.5
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• pp.227-234
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• 2017

Reference electrodes are generally implemented for the purpose of monitoring the cathodic protection potentials of buried or immersed metallic structures. In the market, many types of reference electrodes are available for this purpose, such as saturated calomel, silver/silver chloride and copper/copper sulfate. These electrodes contain a porous ceramic junction plate situated in the cylindrical body bottom to permit ionic flux between the internal electrolyte (of the reference electrode) and the external electrolyte. In this work, the copper/copper sulfate reference electrode was modified by replacing the porous ceramic junction plate for a metallic platinum wire. The main purpose of this modification was to avoid the ion copper transport from coming from the inner reference electrode solution into the surrounding electrolyte, and to mitigate the copper plating on the coupon surfaces. Lab tests were performed in order to compare the performance of the two mentioned reference electrodes. We verified that the experimental errors associated with the measurements conducted with developed reference electrode would be negligible, as the platinum surface area exposed to the surrounding electrolyte and/or to the reference electrolyte are maintained as small as possible.

• Journal of Environmental Science International
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• v.16 no.4
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• pp.495-503
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• 2007

In this study, we took the geometrical character of the river channel junction and hydrologic conditions as independent variables, and hydraulic behavior characteristics as an independent variable. The result, after multiple analysis was carried out, proved that, except for the generating area of the accelerating zone of velocity the accelerating zone and both the main channel and the tributary zone of stagnation the stagnation zone, there was correlation of over 90%. Also, derived presumed expression of the hydraulic characteristics of the junction was applied to the real natural channel - the river channel of the Guem-ho main channel(the A-yang bridge to the Guem-ho bridge). As the result, it proved that it represented hydraulic characteristics relatively well.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.11
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• pp.37-47
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• 1997

Utilizing 2-dimensional device simulations incorporating lattic eheating models, we analyzed in detail the DC breakdown characterisics of NMOS trasistors with different structures, which are commonly used as ESD protection transistors. The mechanism leading to device failure resulting from electrostatic discharge was explained by analyzing the 1st and 2nd breakdown characteristics of LDD devices. Also a criteria for more robust designs of NMOS transistor structures against ESD was suggested by examining the characteristics changes with changes in structural parameters such as the LDD doping concentration, the drain junction depth, the distance between source/drain contacts, and the source junction area.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.90-98
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• 1996

We have evaluated the theoretical conversion loss and noise temperature of mixer using the quantum mixer theory and the method to determine the embedding impedance of waveguide-type mixer mount. At fixed backshort position of the mixer, the calculated SSB mixer conversion loss and mixer noise temperature are 5 dB and 10K within frequency range form 85 GHz to 115 GHz, respectively. The SIS mixer has been developed by using through on the calculated rsutls to observe cosmic radio waves. SIS junction of mixer is Nb/Al-AlOx/Nb and it consists of four series array. Area of each of junction is about 2.5${\mu}m^{2}$. The average receiver noise temperature of manufactured receiver with this mixer is about 30 K(DSB). The receiver noise temperature is much lower than that of receiver with a mixer using mechanical tuning backshort.

• Progress in Superconductivity and Cryogenics
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• v.4 no.1
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• pp.8-12
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• 2002

Since the high performance analog-to-digital converter can be built with Rapid Single Flux Quantum (RSFQ) logic circuits the development of superconductive analog-to-digital converter has attracted a lot of interests as one of the most prospective area of the application of Josephson Junction technology. One of the main advantages in using Rapid Sng1e Flux Quantum logic in the analog-to-digital converter is the low voltage output from the Josephson junction switching, and hence the high resolution. To design an analog-digital converter, first we have used XIC tool to compose a circuit schematic, and then studied the operational principle of the circuit with WRSPICE tool. Through this process, we obtained the proper circuit diagram of an 1-bit analog-digital converter circuit. The optimized circuit was laid out as a mask drawing. Inductance values of the circuit layout were calculated with L-meter.

• International Journal of Contents
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• v.11 no.3
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• pp.7-13
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• 2015

One of the biggest problems of skeletonization is the occurrence of distortions at the junction point of the final binary image. At the junction area, a single point usually becomes a small stroke, and the corresponding trajectory task, as well as the OCR, consequently becomes more complicated. We therefore propose an adaptive post-processing method that uses an adaptive threshold technique to correct the distortions. Our proposed method transforms the distorted segments into a single point so that they are as similar to the original image as possible, and this improves the static handwriting images after the skeletonization process. Further, we attained promising results regarding the usage of the enhanced skeletonized images in other applications, thereby proving the expediency and efficiency of the proposed method.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.12
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• pp.2234-2237
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• 2008

Approximate equations for cylindrical breakdown voltages of planar pn junctions are proposed and verified. The equations show good agreement with the Baliga's results for $r_{j}/Wpp{\leqq}0.3$ and with numerical results for $r_{j}/Wpp{\geqq}0.3$ within 1% error. Sensitivity of the breakdown voltage with respect to the doping concentrations is successfully derived using the approximate equations. The sensitivity formula can be utilized in the area of tolerance design of power semiconductor devices.

• Journal of Institute of Control, Robotics and Systems
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• v.6 no.1
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• pp.112-119
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• 2000

A die-casting junction method is usually used to manufacture the tub of an IH(induction heating) jar. If there is a very small air bubble in the junction area, the thermal conductivity is deteriorated and local overheat occurs. Such problem brings serious inferiority of the IH jar. In this paper, we propose a new method to detect such defect with simply measured thermal data. Thermal distribution of preheated tubs is obtained by scanning with infrared thermal sensors and analyzed with the statistic pattern recognition method. By defining the characteristic feature as the temperature difference between sensors and using ellipsoid function as decision boundary, a supervised learning method of genetic algorithm is proposed to obtain the required parpameters. After applying the proposed method to experiment, we have proved that the rate of recognition is high even for a small number of data set.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.4
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• pp.187-191
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• 2004

In this work, we used the PCID simulator for simulation of solar cell and examined the effect of front-back surface recombination velocity, minority carrier diffusion length, junction depth and emitter sheet-resistance. As the effect of base thickness, the efficiency decreased by the increase in series resistance with the increase of the thickness and found decrease in efficiency by decrease of the current as the effect of the recombination. Also, as the effect of base resistivity, the efficiency increased somewhat with the decrease in resistivity, but when the resistivity exceeded certain value, the efficiency decreased as a increase in the recombination ratio. The optimum efficiency was obtained at the resistivity 0.5 $\Omega$-cm, and thickness $100\mu\textrm{m}$. We have successfully achieved 10.8% and 13.7% efficiency large area($103mm{\times}103mm$) mono-crystalline silicon solar cells without and with PECVD silicon nitride antireflection coating.