• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.460-462
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• 2004

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. There are several leakage current mechanisms in which the stored data disappears. The mechanisms of data disappear is as follow, 1 )Junction leakage current between the junction, 2) Junction leakage current from the capacitor node contact, 3)Sub-threshold leakage current if the transfer transistor is affected by gate etch damage etc. In this paper we showed the plasma edge damage effect to find out data retention time effectiveness. First we measured the transistor characteristics of forward and reverse bias. And junction leakage characteristics are measured with/without plasma damage by HP4145. Finally, we showed the comparison TRET with etch damage, damage_cure_RTP and hydrogen_treatment. As a result, hydrogen_treatment is superior than any other method in a curing plasma etch damage side.

• 대한전자공학회논문지SD
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• 제40권2호
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• pp.98-103
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• 2003

본 논문에서는 Magnetic Tunnel Junction (MTJ)의 새로운 SPICE Macro-Model에 대해서 제안하였다. 제안된 Macro-Model은 다섯 개의 터미널을 가지고 있으며 MTJ의 MR 특성인 hysteresis 성질을 그대로 구현하고 있으며, 시간에 따라 변하는 입력 신호에 대해서도 정확하게 동작하도록 구성되어 시다. 또한 MTJ의 MR 특성을 파라미터 변수값으로 입력을 받을 수 있도록 하여 MTJ의 특성변화에 대해서도 용이하게 적용될 수 있도록 하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.257.2-257.2
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• 2015

In this paper, we report on the 10.33% efficient thin film/bulk tandem solar cells with the top cell made of amorphous silicon thin film and p-type bulk crystalline silicon bottom cell. The tunneling junction layers were used the doped nanocrystalline Si layers. It has to allow an ohmic and low resistive connection. For player and n-layer, crystalline volume fraction is ~86%, ~88% and dark conductivity is $3.28{\times}10-2S/cm$, $3.03{\times}10-1S/cm$, respectively. Optimization of the tunneling junction results in fill factor of 66.16 % and open circuit voltage of 1.39 V. The open circuit voltage was closed to the sum of those of the sub-cells. This tandem structure could enable the effective development of a new concept of high-efficiency and low cost cells.

• 대한기계학회논문집B
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• 제28권6호
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• pp.682-687
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• 2004

Y-junction microchannels are widely used as a flew mixer. Fluids are entered from two branch channels and merged together at a combined channel. In this study, we suggest a simple method to create the fluid digitization using flow instability phenomena. Two immiscible liquids (water/oil) are infused continuously to each Y-junction inlets. Because of the differences in fluid and flow properties at the interface, oil droplet is formed automatically followed by flow instability. In order to clarify the hydrodynamic aspects involved in oil droplet formation, a quantitative flow visualization study has performed. Highly resolved velocity vector fields are obtained by a micro-PIV technique, so that detail flow structures around the droplet are illustrated. In this study, fluorescent particles were mixed with water only for visualization of oil droplet and velocity field measurement in water flow.

• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.551-554
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• 2014

This paper was showed latch up characteristics of super junction power MOSFET by parasitic thyristor according to trench etch angle. As a result of research, if trench etch angle of super junction MOSFET is larger, we obtained large latch up voltage. When trench etch angle was $90^{\circ}$, latch up voltage was more 50 V. and we got 700 V breakdown voltage. But we analyzed on resistance. if trench etch angle of super junction MOSFET is larger, we obtained high on resistance. Therefore, we need optimal point by simulation and experiment for solution of trade off.

• Journal of Korean Neurosurgical Society
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• 제41권1호
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• pp.61-64
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• 2007

Lumbo-sacral junction is a transition lone between the mobile lumbar spine and immobile pelvis. Lumbosacral junction has been considered to be the most troublesome portion of the spine to be fused because of the difference in anatomical and biomechanical factors between spine and pelvis. A metastatic sacral tumor in a 57-year-old man was resected, followed by unilateral lumbo-iliac fixation across lumbosacral junction using modified Galveston technique. Rigid fixation was successfully achieved. Detailed anatomy and surgical techniques are presented.

• 전기의세계
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• 제13권3호
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• pp.13-20
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• 1964

The measurements of X-ray and Gamma-ray Dose Rate have been successfully made by measuring the short circuit current of the Silicon P-N Junction Diode being irradiated. The short circuit current flows when a silicon P-N Junction Diode is irradiated by X-ray of Gammaray radiations due to photovoltaic effect. A brief analysis is given in order to verify the proportionality of a short circuit current to the Dose Rate. Using this method, measurements of X-ray Dose Rate were carried out in the range of 0.05-1600 r/m successfully. The calibration was made by comparing with Victoreen condenser r-meter. Some advantages in this Dose Rate meter over a condenser r-meter were found. One can measure a continous variation of X-ray Dose Rate with this rate meter at the control console of X-ray device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.562-565
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• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

• 전자공학회논문지A
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• 제30A권10호
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• pp.12-19
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• 1993

Because of their high sensitivity and moderate bandwidth, superconducting receivers with SIS (Superconductor Insulator Superconductor) tunnel junction mixer are now widely used for millimeter wave radio astronomy. In this paper we have introduced how to determine the parameters of SIS tunnel junction which have to be optimized to achieve a good mixer performance. From these results of optimized junction parameters determined by this methods, SIS junctions which consist of a series array of four Nb/Al-AlOx/Nb junctions with each area 3.4${\mu}m^{2}$ have been fabricated by SNEP (Selective Niobium Etching Process) and RIE (Reactive Ion Eching). Also we have tested their DC current-voltage characteristics. These SIS junctions will be used as a mixer for 100GHz band cosmic waves receiver.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권1호
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• pp.156-161
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• 2017

This work presents a novel structure for junction-less tunneling field effect transistor (JL-TFET) with a floating gate over the source region. Introduction of floating gate instead of fixed metal gate removes the limitation of fabrication process suitability. The proposed device is based on a heavily n-type-doped Si-channel junction-less field effect transistor (JLFET). A floating gate over source region and a control-gate with optimized metal work-function over channel region is used to make device work like a tunnel field effect transistor (TFET). The proposed device has exhibited excellent ID-VGS characteristics, ION/IOFF ratio, a point subthreshold slope (SS), and average SS for optimized device parameters. Electron charge stored in floating gate, isolation oxide layer and body doping concentration are optimized. The proposed JL-TFET can be a promising candidate for switching performances.