• Proceedings of the Korean Institute of Building Construction Conference
• /
• 2018.05a
• /
• pp.14-15
• /
• 2018

This study is to estimate the buckling characteristics of single-layer latticed dome with Span 300m according to junction's conditions of member.

• Proceedings of the KIEE Conference
• /
• 1991.11a
• /
• pp.286-289
• /
• 1991

We simulated ion implantation and annealing condition of 1 ${\mu}m$ CMOS device using process simulator, SUPREM-II. In this simulation, optimal condition of ion implantation for symmetric threshold voltage determination of PMOS and NMOS region, junction depth and sheet resistance of source/drain region, impurity profile of each region are investigated. Ion implantation dose for 3 ${\mu}m$ N-well junction depth and symmetric threshold voltage of $|0.6|{\pm}0.1$ V were $1.9E12Cm^{-2}$(for phosphorus), $1.7E122Cm^{-2}$(for boron) respectively. Also annealing condition for dopant activation are examined about $900^{\circ}C$, 30 minutes. After final process step, N-well junction, P+ S/D junction and N+ S/D junction depth are calculated 3.16 ${\mu}m$, 0.45 ${\mu}m$ and 0.25 ${\mu}m$ respectively.

• International Journal of Air-Conditioning and Refrigeration
• /
• v.14 no.1
• /
• pp.28-39
• /
• 2006

Two-phase flow through a T-junction has been studied by numerous researchers so far. The dividing characteristics of the gas and liquid phases at the T-junction are very complicated due to a lot of related variables. The prediction models have been suggested by using experimental data for a specific condition or working fluid. But, they showed the application limitation for the most of the other conditions or fluids. Since most of them are applicable for their own experimental range, the generalized model for the wide range of conditions and fluids is needed. Even though it's not available now, some of the models developed for air-water flow at a T-junction might be applicable for the part of refrigerants with some modifications. Especially, for the two-phase flow of refrigerants at the T-junction, very few studies have been performed. Further experimental study is required to be performed for the wide range of test conditions and fluids to predict properly the two-phase flow distribution and phase separation through the T-junction.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2000.09a
• /
• pp.325-326
• /
• 2000

Low temperature diagnosis was performed as a probe for the integrity of MTJ(Magnetic tunnel junction) process which is optimised for the given plasma oxidation condition. TMR ratio increased slowly with decreasing temperature than that expected from spin wave exitation theory〔1〕. Junction resistance (RJ) does not follow T$\^$-$\frac{1}{2}$/ law below 200 K, indicating another conduction path besides spin polarized tunneling is involved at low temperature. Temperature dependence of conductance dip and bias dependence of TMR with temperature are discussed, from which the quality of tunnel barrier and its formation process can be inferred.

• Progress in Superconductivity
• /
• v.3 no.1
• /
• pp.60-64
• /
• 2001

We have studied properties of step-edge Junction prepared with crystal orientation of sapphire substrate. The Step on sapphire substrates fabricated by conventional photolithography method and Ar ion milling method. $CeO_2$ buffer layer and in-situ YBCO thin film were deposited on the stepped sapphire substrates by a pulsed laser deposition method with the predetermined optimized condition. The step angle was centre fled low angle of about $25^{\circ}$. The YBCO film thickness was varied to obtain various thickness ratios of the film to the step height in a range from 0.7 to 1.2. I-V curves of junction were showed RSJ-behavior, double junction structure, and hysteresis due to the crystal orientation of substrate.

• Proceedings of the Korean Institute of Intelligent Systems Conference
• /
• 2001.12a
• /
• pp.78-82
• /
• 2001

Electronic Weighting Machine is used an electronic scale which has many trouble because of broken load cells. In this paper, we propose an intelligent Diagnosis System will for an electronic weighting machine using fuzzy logic. It's purpose be detect of the load cell's trouble. The electronic circuit of system, which call 'junction box', will be connected resistances in a series at circuit of Wheatstone Bridge for monitoring the condition of load cells.

• Progress in Superconductivity
• /
• v.12 no.2
• /
• pp.114-117
• /
• 2011

We report our efforts on the development of Nb-based non-hysteretic Josephson junction fabrication process for quantu device applications. By adopting and modifying the existing Nb-aluminum oxide tunnel junction process, we develop a process for non-hysteretic Josephson junction circuits using metal-silicide as metallic barrier material. We use sputter deposition of Nb and $MoSi_2$, PECVD deposition of silicon oxide as insulator material, and ICP-RIE for metal and oxide etch. The advantage of the metal-silicide barrier in the Nb junction process is that it can be etched in $SF_6$ RIE together with Nb electrode. In order to define a junction area precisely and uniformly, end-point detection for the RIE process is critical. In this paper, we employed thin Al layer for the etch stop, and optimized the etch condition. We have successfully demonstrated that the etch stop properties of the inserted Al layer give a uniform etch profile and a precise thickness control of the base electrode in Nb trilayer junctions.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.9 no.1
• /
• pp.51-54
• /
• 2009

Transparent Cuprous oxide film was deposited by rapid thermal oxidation (RTO) of Cu at $500^{\circ}C$/45s condition on textured single-crystal n-Si substrate to form $Cu_2O$/n-Si heterojunction photodiode. The Hall effect measurements for the $Cu_2O$ films showed a p-type conductivity. The photovoltaic and electrical properties of the junction at room temperature were investigated without any post-deposition annealing. I-V characteristics revealed that the junction has good rectifying properties. The C-V data showed abrupt junction and a built-in potential of 1 V. The photodiode showed good stability and high responsivity in the visible at three regions; 525 nm, 625-700 nm, and 750nm denoted as regions A, B, and C, respectively.

• Proceedings of the Korean Institute of Building Construction Conference
• /
• 2009.11a
• /
• pp.47-50
• /
• 2009

The existing techniques used to estimate and manage the compressive strength of concrete do not include the environmental factors that influence the development of compressive strength and the compressive strength itself. Thus, it is necessary to develop a reasonable yet simple way to measure the compressive strength of concrete structures at construction sites by considering concrete's mechanical properties and curing environment. This study was conducted to propose an acrylic form and a junction isolation mold with crack-inducing boards that uses non-destructive methods to create and collect concrete test samples that are cured in the same condition as the actual concrete structures. junction isolation molds were used in high-strength and super high-strength concrete to evaluate the reliability of compressive strength evaluation on the test sample. The following were the findings of this study:

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.429-429
• /
• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.