• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.65.2-65.2
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• 2011

일반적으로 결정질 실리콘 태양전지에서는 junction depth가 얕아짐으로써 단파장 영역에서의 수집효율이 향상되고 Jsc가 상승하기 때문에 junction depth가 얕은 것이 좋다. 또, 태양전지의 효율을 높이기 위해서는 낮은 재결합 속도가 필요한데 이를 위해서도 얕은 junction depth가 필요하다. 하지만 junction depth가 너무 얕으면 FF와 Voc가 낮아져 효율이 떨어지므로 junction depth를 최적화 할 필요가 있다. 본 논문에서는 PC1D 시뮬레이션을 사용하여 표면 농도를 고정시키고 junction depth를 가변하면서 이에 따른 cell의 parameter변화를 관찰하였다. 그 결과, 면저항 $120{\Omega}/{\square}$에서부터 효율이 saturation되었고, 그에 따른 parameter 값은 FF=76.28%, Jsc=$38.17mA/cm^2$, Voc=596.5V이며 junction depth가 $0.1726{\mu}m$일 때 효율은 17.37%이다.

• Journal of computational fluids engineering
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• v.14 no.1
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• pp.35-44
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• 2009

To adequately analyze flows in pipe or duct network system, traditional node-based junction coupling methods require the junction loss which is specified by empirical or analytic correlations. In this paper, a new finite volume junction coupling method using a ghost junction cell is developed by considering the interchange of linear momentum as well as the important wall-effect at junction without requiring any correlation on the junction loss. Also, boundary treatment is modified to preserve the stagnation enthalpy across boundaries, such as pipe-end and the interface between junction and branch. Also, the computational accuracy and efficiency of the Godunov-type finite volume schemes are investigated by tracing the total mechanical energy of rapid transients due to sudden closure of valve at downstream end.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.551-554
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• 2015

This paper was analyzed electrical characteristics of super junction IGBT with super junction field rings. As a result of super junction IGBT with super junction field rings, we obtained 3,300 V breakdown voltage and good thermal characteristics. we obtained shrinked chip size because field ring was decreased than field ring for conventional IGBT, too. And we fabricated super junction IGBT with super junction field rings. As a result of measuring fabricated chip, we obtained 3,300 V breakdown voltage. The fabricated devices were replaced thyristos using high voltage conversion, sufficiently.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.13-20
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• 2000

In this paper, we demonstrated an analytical description method of forward votage drop and reverse leakage current of the junction barrier controlled schottky rectifier with linearly graded junction and abrupt junction models. In this case, the vertical depths of device are 1[${\mu}{\textrm}{m}$] and 2[${\mu}{\textrm}{m}$], respectively. Through ion implantation and annealing process, we obtain the data of lateral and depth from implanted 2-dimensional profiles. Also we applied these data to models that indicate the change of depletion each on linearly-graded and abrupt juction as the forward and revers bias. After applied depletion changes to electric characteristics of JBS rectifiers, we calculated the forward I-V, the reverse leakage current and temperatures vs. power dissipations according to each junction. When we compared the rectifier with calculated and measured data, from the calculated results, forward votage drop with linearly graded junction is lower than that of abrupt junction and reverse leakage current with linearly graded junction is lower(≒1$\times$10\ulcorner times) than that of abrupt junction. Also, the power dissipations according to different juction depth(1[${\mu}{\textrm}{m}$], 2[${\mu}{\textrm}{m}$]) of device are calculated. Seeing the calculated results, we confirmed it from analytic model that the rectifier with linearly graded junction retained a low power dissipation up to 600[$^{\circ}C$] in comparison with the rectifier with abrupt junction.

• Transactions of the Korean Society of Automotive Engineers
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• v.16 no.2
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• pp.136-142
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• 2008

Thermal management of a junction box of a passenger car has recently become more challenging due to its smaller size and larger current capacity. Thus, it is essential to perform the thermal optimization of a junction box in its design on an early stage of vehicle design. In this study, 3 dimensional CFD simulation with experimental measurement has been done to study for better thermal management of the junction box. First, the study of thermal characteristics of electric relays in the junction box has revealed that each surface of the relay has very different thermal resistance. In addition, an idea to install a cooling fan on the junction box has been studied and it was found that the forced cooling method was not effective on the system to keep the thermal resistance to the reasonable level of the junction box. Finally, the effect of external flows around the junction box on the temperatures of the relays, fuses, etc. has been studied and the result shows that the installation of the junction box at the proper place in an engine room can avoid any unnecessary overdesign in thermal management.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.286-289
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• 2003

In the case of high voltage devices, junction termination plays an important role in determining the breakdown voltage of the device. The mesa junction termination has been demonstrated to yield nearly ideal breakdown voltage for 6H-SiC p-n junctions. However, such an approach may not be attractive because of the nonplanar surface, which is difficult to passivate. Moreover, In case of 4H-SiC, ideal breakdown voltage could not be achieved using mesa junction termination. For 4H-SiC planar junction termination technique is more useful one rather than mesa junction termination. In this paper, breakdown characteristics of the 4H-SiC device with planar junction termination, such as FLR(Field Limiting Ring), FP(Field Plate) and JTE(Junction Termination Extension), is presented. In the case of the FLR, breakdown voltage of 1800V is obtained. And breakdown voltage of 1000V and 1150V is also obtained for the case of FP and JTE case, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.342-343
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• 2012

We studied the Drain-Induced-Barrier-Lowering (DIBL) effect by different drain engineering. One other drain engineering is symmetric source-drain n-channel MOSFETs (SSD NMOSs), the other drain engineering is asymmetric source-drain n-channel MOSFETs (ASD NMOSs). Devices were fabricated using state of art 40 nm dynamic-random-access-memory (DRAM) technology. These devices have different modes which are deep drain junction mode in SSD NMOSs and shallow drain junction mode in ASD NMOSs. The shallow drain junction mode means that drain is only Lightly-Doped-Drain (LDD). The deep drain junction mode means that drain have same process with source. The threshold voltage gap between low drain voltage ($V_D$=0.05V) and high drain voltage ($V_D$=3V) is 0.088V in shallow drain junction mode and 0.615V in deep drain junction mode at $0.16{\mu}m$ of gate length. The DIBL coefficients are 26.5 mV/V in shallow drain junction mode and 205.7 mV/V in deep drain junction mode. These experimental results present that DIBL effect is higher in deep drain junction mode than shallow drain junction mode. These results are caused that ASD NMOSs have low drain doping level and low lateral electric field.

• Applied Microscopy
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• v.50
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• pp.17.1-17.9
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• 2020

Recent advances in fabrication have enabled radial-junction architectures for cost-effective and high-performance optoelectronic devices. Unlike a planar PN junction, a radial-junction geometry maximizes the optical interaction in the three-dimensional (3D) structures, while effectively extracting the generated carriers via the conformal PN junction. In this paper, we report characterizations of radial PN junctions that consist of p-type Si micropillars created by deep reactive-ion etching (DRIE) and an n-type layer formed by phosphorus gas diffusion. We use electron-beam induced current (EBIC) microscopy to access the 3D junction profile from the sidewall of the pillars. Our EBIC images reveal uniform PN junctions conformally constructed on the 3D pillar array. Based on Monte-Carlo simulations and EBIC modeling, we estimate local carrier separation/collection efficiency that reflects the quality of the PN junction. We find the EBIC efficiency of the pillar array increases with the incident electron beam energy, consistent with the EBIC behaviors observed in a high-quality planar PN junction. The magnitude of the EBIC efficiency of our pillar array is about 70% at 10 kV, slightly lower than that of the planar device (≈ 81%). We suggest that this reduction could be attributed to the unpassivated pillar surface and the unintended recombination centers in the pillar cores introduced during the DRIE processes. Our results support that the depth-dependent EBIC approach is ideally suitable for evaluating PN junctions formed on micro/nanostructured semiconductors with various geometry.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.7-14
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• 2016

High junction temperature directly or indirectly affects the optical performance and reliability of high power LEDs in many ways. This paper is focused on junction temperature characterization of LEDs. High power LEDs (3W) were tested in temperature steps to reach a thermal equilibrium condition between the chamber and the LEDs. The LEDs were generated by pulsed currents with duty ratios (0.091% and 0.061%) in multiple steps from 0mA and 700mA. The diode forward voltages corresponding to the short pulsed currents were monitored to correlate junction temperatures with the forward voltage responses for calibration measurement. In junction temperature measurement, forward voltage responses at different current levels were used to estimate junction temperatures. Finally junction temperatures in multiple steps of currents were estimated in effectively controlled conditions for designing the reliability of LEDs.

• International Journal of Highway Engineering
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• v.20 no.4
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• pp.15-20
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• 2018

PURPOSES : The purpose of this study is to analyze the magnitude of shoving of asphalt pavement by junction type between airport concrete and asphalt pavements, and to suggest a junction type to reduce shoving. METHODS : The actual pavement junction of a domestic airport, which is called airport "A" was modified by placing the bottom of the buried slab on the top surface of the subbase. A finite element model was developed that simulated three junction types: a standard section of junction proposed by the FAA (Federal Aviation Administration), an actual section of junction from airport "A" and a modified section of junction from airport "A". The vertical displacement of the asphalt surface caused by the horizontal displacement of the concrete pavement was investigated in the three types of junction. RESULTS : A vertical displacement of approximately 13 mm occurred for the FAA standard section under horizontal pushing of 100 mm, and a vertical displacement of approximately 55 mm occurred for the actual section of airport "A" under the same level of pushing. On the other hand, for the modified section from airport "A" a vertical displacement of approximately 17 mm occurred under the same level of pushing, which is slightly larger than the vertical displacement of the FAA standard section. CONCLUSIONS : It was confirmed that shoving of the asphalt pavement at the junction could be reduced by placing the bottom of the buried slab on the top surface of the subbase. It was also determined that the junction type suggested in this study was more advantageous than the FAA standard section because it resists faulting by the buried slab that is connected to the concrete pavement. Faulting of the junctions caused by aircraft loading will be compared by performing finite element analysis in the following study.