Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
권호 표지
DOI QR코드

DOI QR Code

Assessment Methodology of Junction Temperature of Light-Emitting Diodes (LEDs)

  • Chang, Moon-Hwan (Center for Advanced Life Cycle Engineering, Department of Mechanical Engineering, University of Maryland) ;
  • Pecht, Michael (Center for Advanced Life Cycle Engineering, Department of Mechanical Engineering, University of Maryland)
  • Received : 2016.04.04
  • Accepted : 2016.07.22
  • Published : 2016.09.30
Download PDF
⟨ Previous Next ⟩

Abstract

High junction temperature directly or indirectly affects the optical performance and reliability of high power LEDs in many ways. This paper is focused on junction temperature characterization of LEDs. High power LEDs (3W) were tested in temperature steps to reach a thermal equilibrium condition between the chamber and the LEDs. The LEDs were generated by pulsed currents with duty ratios (0.091% and 0.061%) in multiple steps from 0mA and 700mA. The diode forward voltages corresponding to the short pulsed currents were monitored to correlate junction temperatures with the forward voltage responses for calibration measurement. In junction temperature measurement, forward voltage responses at different current levels were used to estimate junction temperatures. Finally junction temperatures in multiple steps of currents were estimated in effectively controlled conditions for designing the reliability of LEDs.

Keywords

References

  1. M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers and M. G. Craford, "Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting", J. Display Technol., 3(2), 160 (2007). https://doi.org/10.1109/JDT.2007.895339
  2. D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin and S. L. Rudaz, "Illumination with Solid State Lighting Technology", IEEE J. Sel. Topics Quantum Electron., 8(2), 310 (2002). https://doi.org/10.1109/2944.999186
  3. F. M. Steranka, J. Bhat, D. Collins, L. Cook, M. G. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.- C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier and J. J. Wierer, "High Power LEDs-Technology Status and Market Applications", Phys. Status Solidi A, 194(2), 380 (2002). https://doi.org/10.1002/1521-396X(200212)194:2<380::AID-PSSA380>3.0.CO;2-N
  4. Y. Aoyama and T. Yachi, "An LED Module Array System Designed for Streetlight Use", Energy 2030 Conference, 2008. Energy 2008. IEEE, 1 (2008).
  5. R. Vittori and A. Scaburri, "New Solid State Technologies and Light Emission diodes as a Mean of Control and Lighting Source Applicable to Explosion Proof Equipment, With the Scope to Reduce Maintenance, to Limit the Risk of Bad Maintenance and to Expand the Plants' Life", PCIC Europe, 2009. PCIC EUROPE'09. Conference Record, 193 (2009).
  6. J.-B. Park, H.-J. Park, T. Jeong, S.-J. Kang, J.-S. Ha, and S.- J. Leem, "Study on the Electrode Design for an Advanced Structure of Vertical LED", J. Microelectron. Packag. Soc., 22(4), 71 (2015). https://doi.org/10.6117/kmeps.2015.22.4.071
  7. T.-Y. Lee, K.-H. Kim, M.-S. Kim, E.-S. Ko, J.-H. Chio, K.- S. Moon, M.-S. Kim and S. Yoo, "Light Efficiency of LED Package with $TiO_2$-Nanoparticle-Dispersed Encapsulant", J. Microelectron. Packag. Soc., 21(3), 31 (2014).
  8. W. Kim, H. S. Kim, D. Shin and H. C. Lee, "Effects of ZnO Composition on the Thermal Emission Properties for LTCC Type of High Power LED Package", J. Microelectron. Packag. Soc., 19(4), 79 (2012). https://doi.org/10.6117/kmeps.2012.19.4.079
  9. J. Liu, W. S. Tam, H. Wong and V. Filip, "Temperature- Dependent Light-Emitting Characteristics of InGaN/GaN Diodes", Microelectron. Reliab., 49(1), 38 (2009). https://doi.org/10.1016/j.microrel.2008.10.002
  10. S. Chhajed, Y. Xi, T. Gessmann, J.-Q. Xi, J. M. Shah, J. K. Kim and E. F. Shubert, "Junction Temperature in Light-Emitting Diodes Assessed by Different Methods", Proc. SPIE, 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, San Jose, California, 16 (2005).
  11. J. Chonko, "Using Forward Voltage to Measure Semiconductor Junction Temperature", Keithley Instruments, Inc., 2681, 1 (2006).
  12. Y. Xi and E. F. Schubert, "Junction-temperature Measurement in GaN Ultraviolet Light-emitting Diodes Using Diode Forward Voltage Method", Appl. Phys. Lett., 85(12), 2163 (2004). https://doi.org/10.1063/1.1795351
  13. F. Jiang, W. Liu, Y. Li, W. Fang, C. Mo, M. Zhou and H. Liu, "Research on the Junction-temperature Characteristic of GaN Light-emitting Diodes on Si Substrate", J. Lumin., 122-123, 693 (2007). https://doi.org/10.1016/j.jlumin.2006.01.262

Cited by

  1. Analysis of junction temperatures for groups III–V semiconductor materials of light-emitting diodes vol.49, pp.5, 2017, https://doi.org/10.1007/s11082-017-1015-6
  2. 전기화학적 정전위 활성화를 사용한 수소 제거에 의한 AlGaN기반의 UV-C 발광 다이오드의 p-형 활성화 vol.28, pp.4, 2016, https://doi.org/10.6117/kmeps.2021.28.4.085