• Title/Summary/Keyword: It Convergence

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Side-Channel analysis and masking scheme for domestic lightweight cipher PIPO (국산 경량 암호 PIPO에 대한 부채널 분석과 마스킹 기법 제안)

  • Sim, Min-Joo;Kim, Hyun-Jun;Kwon, Hyeok-Dong;Jang, Kyung-Bae;Kim, Hyun-Ji;Park, Jae-Hoon;Eum, Si-Woo;Song, Gyeong-Ju;Seo, Hwa-Jeong
    • Proceedings of the Korea Information Processing Society Conference
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    • 2021.05a
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    • pp.171-174
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    • 2021
  • 최근 사물인터넷(IoT) 환경에서 다양한 장비의 인터넷 통신이 가능하여 이에 적절한 경량 블록 암호 알고리즘에 대한 연구가 활발히 진행되고 있다. ICISC 2020에서 새로 발표된 국산 경량 블록 암호 알고리즘인 PIPO는 새로운 경량 S-Box를 조합한 unbalanced-Bridge 구조로 효율적인 비트슬라이싱 구현을 제공한다. IoT 환경에 PIPO가 적용되기 위해서는 부채널 분석에 대한 안전성이 보장되어야 한다. 따라서 본 논문에서는 PIPO가 1차 CPA 공격에 취약함을 확인한다. 그리고 부채널 공격에 대응하기 위해 1차 마스킹 기법을 제안한다. 제안한 마스킹 기법은 1차 CPA 공격에 안전하였으며, 마스킹 적용 전보다 -375%의 성능을 보였다. 그리고 기존 기법보다 1287% 속도가 빨라진 것을 확인하였다.

Analysis of Threats Factor in IT Convergence Security (IT 융합보안에서의 위협요소 분석)

  • Lee, Keun-Ho
    • Journal of the Korea Convergence Society
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    • v.1 no.1
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    • pp.49-55
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    • 2010
  • As the developing of the information communication technology, more and more devices are with the capacity of communication and networking. The convergence businesses which communicate with the devices have been developing rapidly. The IT convergence communication is viewed as one of the next frontiers in wireless communications. In this paper, we analyze detailed security threats against M2M(Machine to Machine), intelligent vehicle, smart grid and u-Healthcare in IT convergence architecture. We proposed a direction of the IT convergence security that imbedded system security, forensic security, user authentication and key management scheme.

Plasma Oxidation Effect on Ultralow Temperature Polycrystalline Silicon TFT on Plastic Substrate

  • Kim, Yong-Hae;Moon, Jae-Hyun;Chung, Choong-Heui;Yun, Sun-Jin;Park, Dong-Jin;Lim, Jung-Wook;Song, Yoon-Ho;Lee, Jin-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1122-1125
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    • 2006
  • The TFT performances were enhanced and stabilized by plasma oxidation of the polycrystalline Si surface prior to the plasma enhanced atomic layer deposition of $Al_2O_3$ gate dielectric film. We attribute the improvement to the formation of a high quality oxide interface layer between the gate dielectric film and the poly-Si film. The interface oxide has a predominant effect on the TFT's characteristics, and is regulated by the gap distance between the electrode and the polycrystalline Si surface.

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A Study on Digital Convergence Related with Our Life using ICT (ICT를 이용한 생활 밀착형 디지털 컨버전스에 관한 연구)

  • Lee, Seong-Hoon
    • Journal of Digital Convergence
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    • v.11 no.11
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    • pp.429-434
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    • 2013
  • In 2011, Government introduced "IT Convergence Technology Prediction Survey 2025". This report includes 10 ICT industries. Convergence was combined with a word 'digital'. Digital convergence means a service or new product which appeared through fusion of unit technologies in information and communication regions. The effects of convergence technologies and social phenomenons are visualized in overall regions of society such as economy, society, culture, etc. In this paper, we described a prospects and technologies needed in digital convergence environment. And we described IT-Building, IT-Car, IT-Medicine, IT-Textile which was related with our lives in today among 10 ICT industries.

Dynamics of the Evolution of ICT Convergence : Knowledge Convergence in Silicon Valley (ICT 융합 진화과정의 동태성 : 실리콘밸리 지식 융합 사례를 중심으로)

  • Jeong, Soon-Ki;Rhee, Byung Ho
    • Journal of Information Technology Services
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    • v.12 no.1
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    • pp.143-161
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    • 2013
  • Convergence is now the trend of knowledge information society. Information technology and knowledge transfer are main sources of convergence. There are many articles which studied outcomes of convergence while there are few articles that try to study the process of convergence. The purpose of this study is to investigate how convergence is dynamically formalized. For the analysis, we used Institutional Analysis and Development(IAD) framework from the point of convergence. IAD framework could synthetically study the origin and the process of convergence. We investigated the case of sillicon valley whether or not dynamics of ICT convergence could be explicable by IAD framework. The results shows that ICT technology and knowledge could be the enabler for the formation of convergence. ICT technology accelerates convergence and knowledge convergence from information converge different technologies and industries. This article provides a theoretical foundation for future research to analyze dynamics of ICT convergence by the IAD framework. For the future work, it is recommended that a study is to be empirically analyzed the dynamics of ICT convergence.

A Study on the Development of High School Convergence-Education Model and Program (고등학교 융합 교육 모형 및 프로그램 개발에 관한 연구)

  • Bae, Sang-Yong;Yun, Ju-Ho;Ryu, Dae-Hyun;Shin, Seung-Jung
    • Proceedings of the Korea Information Processing Society Conference
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    • 2012.04a
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    • pp.1046-1047
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    • 2012
  • 산업화 시대에서 지식정보화 사회로, 현재는 융합 사회로 진화되고 있다. 하지만 교육은 현재의 사회를 반영하지 못하고 아직도 단일 교과 중심의 교육이 이루어 지고 있다. 이에 고등학교 교육에 융합교육 모형을 개발하고자 한다.

Technological Convergence of IT and BT: Evidence from Patent Analysis

  • Geum, Young-Jung;Kim, Chul-Hyun;Lee, Sung-Joo;Kim, Moon-Soo
    • ETRI Journal
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    • v.34 no.3
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    • pp.439-449
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    • 2012
  • In recent innovation trends, one notable feature is the merging and overlapping of technologies: in other words, technological convergence. A key technological convergence is the fusion of biotechnology (BT) and information technology (IT). Major IT advances have led to innovative devices that allow us to advance BT. However, the lack of data on IT-BT convergence is a major impediment: relatively little research has analyzed the inter-disciplinary relationship of different industries. We propose a systematic approach to analyzing the technological convergence of BT and IT. Patent analysis, including citation and co-classification analyses, was adopted as a main method to measure the convergence intensity and coverage, and two portfolio matrices were developed to manage the technological convergence. The contribution of this paper is that it provides practical evidences for IT-BT convergence, based on quantitative data and systematic processes. This has managerial implications for each sector of IT and BT.

Nanogap Array Fabrication Using Doubly Clamped Freestanding Silicon Nanowires and Angle Evaporations

  • Yu, Han-Young;Ah, Chil-Seong;Baek, In-Bok;Kim, An-Soon;Yang, Jong-Heon;Ahn, Chang-Guen;Park, Chan-Woo;Kim, Byung-Hoon
    • ETRI Journal
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    • v.31 no.4
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    • pp.351-356
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    • 2009
  • We present a simple semiconductor process to fabricate nanogap arrays for application in molecular electronics and nano-bio electronics using a combination of freestanding silicon nanowires and angle evaporation. The gap distance is modulated using the height of the silicon dioxide, the width of the Si nanowires, and the evaporation angle. In addition, we fabricate and apply the nanogap arrays in single-electron transistors using DNA-linked Au nanoparticles for the detection of DNA hybridization.

A Study on Convergence Education of IT & Design for Training Creative Talent (창의적 인재 양성을 위한 IT & 디자인 분야의 융합 교육 연구)

  • Kwon, Hyo-Jeong
    • Journal of Korea Multimedia Society
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    • v.17 no.11
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    • pp.1354-1362
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    • 2014
  • In order to solve the complicated problems faced by the spread of diversified information devices and changes in the user environment in recent years, the importance of training creative talent as well as the need for interdisciplinary convergent approach have emerged. As a future technology development project, convergence education with the design sector for training creative talent in the IT field is also urgent. In this study, we recognized the importance and problems of the convergent approach between IT and design sector by examining the convergence theory and cases with a focus on effective creativity development and sought a new direction for convergence education in the future by investigating the awareness on the convergent approach of college students and analyzing the results. This will be able to have significance as a basic study for discovering creative and innovative convergent talent in the IT and design sector in the future and strengthening basic competence.

Temperature, Current, and Voltage Dependences of Junction Failure in PIN Photodiodes

  • Park, Sahng-Gi;Sim, Eun-Deok;Park, Jeong-Woo;Sim, Jae-Sik;Song, Hyun-Woo;Oh, Su-Hwan;Baek, Yong-Soon
    • ETRI Journal
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    • v.28 no.5
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    • pp.555-560
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    • 2006
  • A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of $190^{\circ}C$, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.

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