• 한국지진공학회논문집
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• 제12권4호
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• pp.55-61
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• 2008

면진장치 중에서 최근 많은 연구가 이루어지고 있는 마찰진자 베어링은 적절한 마찰력을 얻기 위해 PTFE(Polytetrafluoroethylene) 마찰재가 이용되고 있다. 본 연구에서는 자력의 반발력을 이용해 재료의 성질을 대체하여 면진성능을 향상 시킬 수 있는 자력을 이용한 마찰진자 베어링을 제안하였다. 제안된 시스템은 자력에 의한 반발력이 수직력을 줄여줌으로써 재료에 의한 마찰계수의 영향을 줄일 수 있음을 가정하였다. 또한 자력의 영향을 가정하기 위해서 간단한 실험을 구성해 보았으며, 자력이 작용을 할 때 마찰계수($\mu$)를 약 20%정도 줄여줄 수 있었다. 실험 결과를 적용한 수치해석을 통해 다양한 지진에 대해서 기존의 마찰진자 베어링보다 향상된 성능을 보여주었고, 특히 지진으로 인해 구조물의 파괴에 작용하는 주된 요소인 최상층의 가속도와 구조물의 상대변위를 비교함으로써 제안된 시스템이 면진장치로서의 기능을 가지고 있음을 확인하였다. 자력을 이용하여 기존의 PTFE 마찰재를 대체할 수 있는 자력을 이용한 마찰진자 베어링의 구조적 설계를 할 수 있다면 마찰진자 베어링의 문제점을 보완한 기초격리장치로서 적용될 수 있을 것으로 사료된다.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Smart Structures and Systems
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• 제17권5호
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• pp.691-708
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• 2016

Recently, number of smart material are investigated and widely used in civil construction and other industries. Present study investigates the application of smart semi-active piezoelectric friction damper (PFD) made with piezoelectric material for the seismic control of the horizontally curved bridge isolated with lead rubber bearing (LRB). The main aim of the study is to investigate the effectiveness of hybrid system and to find out the optimum parameters of PFD for seismic control of the curved bridge. The selected curved bridge is a continuous three-span concrete box girder supported on pier and rigid abutment. The PFD is located between the deck and abutments or piers in chord and radial directions. The bridge is excited with four different earthquake ground motions with all three components (i.e. two horizontal and a vertical) having different characteristics. It is observed that the use of semi-active PFD with LRB is quite effective in controlling the response of the curved bridge as compared with passive system. The incorporation of the smart damper requiring small amount of energy in addition with an isolation system can be used for effective control the curved bridge against the dynamic loading.

• 한국환경보건학회지
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• 제31권1호
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• pp.31-38
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• 2005

An anti-fungal material produced by actinomycetes was isolated from domestic soil. This actinomycetes was identified as Streptomyces albogriseus by 16S rDNA sequence. YEME (yeast extract 4 g, malt extract 10 g, glucose 4 g, D.W 1l, pH 7.00.2) medium was used for production of anti-fungal materials. S. albogriseus was cultured in a shaking incubator for 2 weeks at 150 rpm and $25^{\circ}C$. An anti-fungal material produced by S. albogriseus was identified at 340 nm by uv/vis- spectrometer and it showed powerful anti-fungal activity. This is the first report that secondary metabolite produced by S. albogriseus showed an activity against phytopathogenic fungi such as Collectrichum coccodes, Botrytis cinerea, Cladosporium cucumerinum, Didymella bryoniae.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.29-33
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.356-357
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• 2005

Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials at their surfaces. Especially, polishing pad is considered as one of the most important consumables because of its properties. Subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure pad. Microstructure pad is designed to have uniform structure on its surface and fabricated by micro-molding technology. And then STI CMP performances such as oxide dishing and nitride corner rounding are evaluated.

• 한국정보통신학회논문지
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• 제14권4호
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• pp.983-990
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• 2010

본 논문에서는 향후 차세대 통신망으로 예상되는 LTE(Long Term Evolution)와 DCS1800, DCS1900, WCDMA 대역에 적용 가능한 MIMO 안테나를 설계 및 제작하였다. 기존 모노폴 안테나 구조에 MD 매질을 이용하여 저주파 대역인 LTE 대역의 성능을 만족함과 동시에 소형화를 이루고, 고주파 대역인 DCS, WCDMA 대역의 광대역화를 동시에 만족시켰으며 전 대역 우수한 격리도 특성을 나타내었다. 제안된 MIMO 안테나는 LTE 대역과 DCS1800, DCS1900, WCDMA 대역 모두 VSWR < 2 및 격리도 -10 dB 이하를 만족하였고, -1.66 ~ 1.33 dBi의 이득 및 전방향성 방사패턴을 얻었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.565-568
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm 6.7$$\times$$10^{-3}$/$^{\circ}C$ and $\pm 8.2$$\times$$10^{-4}$/$^{\circ}C$respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and hip high-temperature operation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.9-12
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• 2004

In this paper, a new small sized Lateral Trench Electrode Power MOS was proposed. This new structure, called LTEMOS(Lateral Trench Electrode Power MOS), was based on the conventional lateral power MOS. But the entire electrodes of LTEMOS were placed in trench oxide. The forward blocking voltage of the proposed LTEMOS was improved by 1.5 times with that of the conventional lateral power MOS. The forward blocking voltage of LTEMOS was about 240 V. At the same size, an improvement of the forward blocking voltage of about 1.5 times relative to the conventional MOS was observed by using ISE-TCAD which was used for analyzing device's electrical characteristics. Because all of the electrodes of the proposed device were formed in each trench oxide, the electric field was crowded to trench oxide and punch-through breakdown was occurred, lately.

• 한국기계가공학회지
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• 제18권4호
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• pp.34-40
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• 2019

We performed shape optimization of an anti-vibration rubber assembly which is used in the field option cabin of agricultural tractors to improve the vibration isolation capability. To characterize the hyper-elastic material property of rubber, we performed uniaxial and biaxial tension tests and used the data to calibrate the material model applied in the finite element analyses. We conducted a field test to characterize the input excitation from the tractor and the output response at the cabin frame. To account for the nonlinear behavior of rubber, we performed static analyses to derive the load-displacement curve of the anti-vibration rubber assembly. The stiffness of the rubber assembly could be calculated from this curve and was input to the harmonic analyses of the cabin. We compared the results with the test data for verification. We utilized Taguchi's parameter design method to determine the optimal shape of the anti-vibration rubber assembly and found two distinct shapes with reduced stiffness. Results show that the vibration at the cabin frame was reduced by approximately 35% or 47.6% compared with the initial design using the two optimized models.