• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.72-80
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• 2001

In this paper, we present a systematic method of extracting the input parameters of poly-Si TFT(Thin-Film Transistor) for Spice simulations. This method has been applied to two different types of poly-Si TFTs such as ELA (Excimer Laser Annealing) and SMC (Silicide Mediated Crystallization) with good fitting results to experimental data. Among the Spice circuit simulators, the PSpice has the GUI(graphic user interface) feature making the composition of complicated circuits easier. We added successfully the poly-Si TFT model of AIM-Spice to the PSpice simulator, and analyzed easily to compare the electrical characteristics of pixels without or with the line RC delay. In the comparative results, the ELA poly-Si TFT is superior to the SMC poly-Si TFT in the charging time and the kickback voltage for the TFT-LCD (Thin Film Transistor-Liquid Crystal Display).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.25-35
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• 2001

In order to analyze the electrical characteristics of complicated thin film transistor-liquid crystal display (TFT-LCD) array circuits, it is indispensible to use simulation programs such as PSPICE and AIM-SPICE. In this paper, we present a systematic method of extracting the input parameters of poly-Si TFT for SPICE simulations. This method was applied to two different types of poly-Si TFTs, fabricated by excimer laser annealing and silicide mediated crystallization methods, and yielded good fitting results to experimental data. Among the SPICE simulators, PSPICE has the graphic user interface feature making the composition of complicated circuits easier. We added successfully a poly-Si TFT device model to the PSPICE simulator, and analyzed easily the electrical characteristics of pixels considering the line RC delay. The results of this work would contribute to efficient simulations of poly-Si TFT-LCD arrays.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.153-161
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• 2011

In this work, we report the physics-based SPICE model of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and demonstrate the SPICE simulation of amorphous InGaZnO (a-IGZO) TFT inverter by using Verilog-A. As key physical parameter, subgap density-of-states (DOS) is extracted and used for calculating the electric potential, carrier density, and mobility along the depth direction of active thin-film. It is confirmed that the proposed DOS-based SPICE model can successfully reproduce the voltage transfer characteristic of a-IGZO inverter as well as the measured I-V characteristics of a-IGZO TFTs within the average error of 6% at $V_{DD}$=20 V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.7 no.1
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• pp.83-91
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• 1996

The SPICE circuit analysis program has a limited math capability and, in general, cannot be used for RF and microwave simulation because a complex arithmetic is required to compute S-parameters from node voltages. This paper presents two test bench models that can be used to obtain node voltages proportional to incident, reflected, and transmitted signals. From SPICE computed node voltages, S-parameters are computed using the math capability of the PSPICE post processor, PROBE, as an example for a low-pass filter consisting of transmission line sections. The results of this example are compared with another high frequency circuit analysis program, TOUCHSTONE. The difference between the results of these two programs in magnitude was less than 0.003 and in phase was a few tenths of a degree. By using these test benchs to simulate a filter, RF and microwave analysis can be made with the SPICE, which can be a cost-effective and readily available computational tool for educators and practicing engineers.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.3
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• pp.422-426
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• 2012

Transient radiation is emitted during a nuclear explosion. Transient radiation causes a fatal error in the CMOS circuit as a Upset and Latch-up. In this paper, transient radiation NMOS, PMOS, INVERTER SPICE model was proposed on the basisi of transient radiation effects analysis using TCAD(Technology Computer Aided Design). Photocurrent generated from the MOSFET internal PN junction was expressed to the current source and Latch-up phenomenon in the INVERTER was expressed to parasitic thyristor for the transient radiation SPICE model. For example, the proposed transient radiation SPICE model was applied to CMOS NAND circuit. SPICE simulated characteristics were similar to the TCAD simulation results. Simulation time was reduced to 120 times compared to TCAD simulation.

• Journal of Sensor Science and Technology
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• v.30 no.4
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• pp.261-266
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• 2021

A simple memristor model is proposed for the neuromorphic system in the Simulation Program for Integrated Circuits Emphasis (SPICE). The memristive I-V characteristics with different voltage and frequencies were analyzed. And with the model, we configured a learning and inference system with 4 by 4 memristor array to show the practical use of the model. We examined the applicability by configuring the simplest neuromorphic circuit. The total simulation time for the proposed model was 18% lesser than that for the one-memristor model. When compared with more memristor models in a circuit, the time became even shorter.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.606-608
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• 2014

The Study on the technique of applying the method USB redirection on Linux-based SPICE-GTK VDI solution for in (Virtual Desktop Infrastructure) VDI solution for Android-based USB redirection in this paper. VDI solutions are developed according to the development of many of the latest Android-based devices, but a VDI solution that supports USB redirection is limited. Also does not support USB redirection of Android to use the SPICE VDI solution. Therefore, the text presents the techniques applied to the Android-based VDI solutions applied to analyze the way USB redirection of SPICE-GTK VDI solution based on Linux. G PRO smartphone devices to install and use Linux-based VDI server to a test of the method applied in this paper, and the USB redirection applied VDI clients using a USB storage device, USB redirection is done playing files results you can check

• The Journal of Korean Institute of Communications and Information Sciences
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• v.15 no.3
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• pp.197-212
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• 1990

This paper present a new design concept of a single chip 16-bit data path using the concept of modular design, the whole system is divided into several blocks which can be operated as an independent system itself. Making the internal blocks can act as a subsystem, it is possible to shorten design turn-around time, to be redesigned effectively, and to optimize the system performance. The designed system is data path. The data path is to manipulate 16-bit integer data. It is composed of aritmetic logic unit, register file, barrel shifter and bus circuit. The widths and lengths of gate in the circuit were determined using SPICE2. The results of circuit simulation were in good agreement with expected circuit characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.278-282
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• 2018

We propose a SPICE model of drain-induced barrier lowering (DIBL) for a junctionless cylindrical surrounding gate (JLCSG) MOSFETs. To this end, the potential distribution in the channel is obtained via the Poisson equation, and the threshold voltage model is presented for the JLCSG MOSFET. In a JLCSG nano-structured MOSFET, a channel radius affects the carrier transfer as well as the channel length and oxide thickness; therefore, DIBL should be expressed as a function of channel length, channel radius, and oxide thickness. Consequently, it can be seen that DIBLs are proportional to the power of -3 for the channel length, 2 for the channel radius, 1 for the thickness of the oxide film, and the constant of proportionality is 18.5 when the SPICE parameter, the static feedback coefficient ${\eta}$, is between 0.2 and 1.0. In particular, as the channel radius and the oxide film thickness increase, the value of ${\eta}$ remains nearly constant.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.4
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• pp.8-14
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• 2004

In this paper, We designed the electronic ballast power factor corrected(PFC) circuity for an 400[W] hight pressure soldium lamp using boost-converter. The values of PFC elements in the proposed boost-converter circuit are calculated theoretically and performed simulation using IsSPICE. We also implemented the ballast for high pressure sodium lamp and experiments. We found that the experimental characteristics of implemented PFC circuit were same with those of simulation results. The experimental results show the performance as PF 90.3[%] at output 400(W).