• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.485-489
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• 2015

An accurate large-signal BSIM4 macro model including new empirical bias-dependent equations of the drain-source capacitance and channel resistance constructed from bias-dependent data extracted from S-parameters of RF MOSFETs is developed to reduce $S_{22}$-parameter error of a conventional BSIM4 model. Its accuracy is validated by finding the much better agreement up to 40 GHz between the measured and modeled $S_{22}$-parameter than the conventional one in the wide bias range.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.23-30
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• 2016

We report a STT-MRAM write-scheme, in which the length of the write-pulse is determined dynamically by sensing the status of MTJ cells. The proposed scheme can reduce the power consumption by eliminating unnecessary writing current after the switching has occurred. We also propose a reference cell design, which is optimized for the use in write-circuits. The performance of the proposed circuit was verified by SPICE level simulations of the circuit implemented in a $0.13{\mu}m$ CMOS process.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.11
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• pp.56-65
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• 1997

In this paper, a design of current-mode continuous-time filters for low voltage and high frequency applictions using complementary bipolar current mirror paris is presented. The proposed current-mode filters consist of simple bipolar current mirrors and capacitors and are quite suitable for monolithic integrtion. Since the design method of the proposed curent-mode filters is based on the integrator type of realization, it can be used for a wide range of applications. And the cutoff frequency of th efilters can be easily changed by the DC cntrolling current. As design examples, the 5th order butterworth filters are designed by cascade and leapfrog methods with tunable cutoff frequencies from 30MHz to 100MHz. The characteristics of the designed current mode filters are simulated and examined by SPICE using standard bipolar transistor parameters.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1138-1143
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• 2015

Effects of fabrication process variations on impedance of microelectrodes integrated on a neural probe were examined through equivalent circuit modeling and SPICE simulation. Process variation and the corresponding range were estimated based on experimental data. The modeling results illustrate that the process variation induced by metal etching process was the dominant factor in impedance variation. We also demonstrate that the effect of process variation is frequency dependent. Another process variation that was examined in this work was the thickness variation induced by deposition process. The modeling results indicate that the effect of thickness variation on impedance is negligible. This work provides a means to predict the variations in impedance values of microelectrodes on neural probe due to different process variations.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.567-570
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• 2002

The LVDS (Low Voltage Differential Signaling) I/O cells, fully compatible with ANSI TIA/ EIA-644 LVDS standard, are designed using a 0.35${\mu}m$ standard CMOS technology. With a single 3V supply, the core cells operate at 1.34Gbps and power consumption of the output driver and the input receiver is 10. 5mW and 4.2mW, respectively. In the output driver, we employ the DCMFB (Dynamic Common-Mode FeedBack) circuit which can control the DC offset voltage of differential output signals. The SPICE simulation result of the proposed output driver shows that the variation of the DC offset voltage is 15.6% within a permissible range. In the input receiver, the proposed dual input stage with a positive feedback latch covers rail-to-rail input common-mode range and enables a high-speed, low-power operation. 5-channels of the proposed LVDS I/O pair can handle display data up to 8-bit gray scale and UXGA resolution.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.768-776
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• 2014

Using a simplified high-frequency small-signal equivalent circuit model for BSIM3 MOSFET, the fully differential two-stage folded-cascode CMOS operational amplifier is analyzed to obtain its small-signal voltage transfer function. As a result, the expressions for dc gain, five zero frequencies, five pole frequencies, unity-gain frequency, and phase margin are derived for op amp design using design equations. Then the analysis result is verified through the comparison with Spice simulations of both a high speed op amp and a low power op amp designed for the $0.13{\mu}m$ CMOS process.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.103-107
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• 2006

In this paper, a CMOS complementary bridge rectifier for driving RFID transponder chips is presented. The proposed RFID CMOS complementary bridge rectifier is designed with two NMOSs at the input, which are configured by cross-connected gate structures, and two PMOSs and two NMOSs at the output, which are configured by diode-connected MOS structures. Output characteristics of the proposed rectifier are analyzed with the high frequency small-signal equivalent circuit and verified with SPICE for RFID operating frequencies of 13.56 MHz HF for ISO 18000-3, 915MHz UHF for ISO 18000-6, and 2.45 GHz microwave for ISO 18000-4. Simulation results show well-rectified and high enough DC output voltages for driving the low power microchip in the RFID transponder for the frequency range from HF to microwave. DC output voltages are dropped by only around 0.7 V from the input peak-to-peak voltages.

• Proceedings of the KIEE Conference
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• 1998.11b
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• pp.612-614
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• 1998

As chip feature size decrease, interconnect delay gains more importance. A accurate timing analysis required to estimate interconnect delay as well as cell delay. In this paper, we present a timing-level delay calculation tool of which the accuracy is bounded within 10% of SPICE results. This delay calculation tool generates delay values in SDF(Standard Delay Format) for parasitic data extracted in SPEF(Standard Parasitic Exchange Format). The efficiency of the tool is easily seen because it uses AWE(Asymptotic Waveform Evaluation) algorithm for interconnect delay calculation, and precharacterized library and effective capacitance model for cell delay calculation.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.33B no.9
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• pp.107-116
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• 1996

In the stochastic structure for doing exact calculationk, an input number must be changed to a pulse stream. Because the performance of random number generator (RNG) is controlled by its initial condition, we suggested newly modified cellular automata (MCA) which is uses a counter for boundary condition. We compared newly suggested MCA RNG to previously reported RNGs using the AND gate passing outputs which have the same meaning of multiplication in the stochastic calculation. In order to use stochastic we studied about the method, one large RNG can generate many small random numbers. In this method, RNG must have large drive capabilities for many input comparator. So we studied about drive capabilities using BiCMOS circuit and CMOS circit by SPICE.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2552-2554
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• 2001

This paper presents a front-end electronic circuits for signal detection on multi-gap resistive plate. The input to the circuit is the signal(voltage : -800mv, frequency : 20${\sim}$40MHZ, noise : 50mv, 1GHz) from the multi-gap resistive plate chamber and the output is the 5v pulse signal. The front-end electronic circuit consists of preamplifier, peak-detector, and comparator. Spice simulation show that the circuit has the better response time than the one of the conventional measuring instruments.