• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.7-12
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• 2006

Local minority carrier lifetime control by means of particle irradiation is an useful technology for Production of modern silicon Power devices. Crystal damage due to ion irradiation can be easily localized by choosing appropriate irradiation energy and minority tarrier lifetime can be reduced locally only in the damaged layer. In this work, proton irradiation technology was used for improving the switching characteristics of a un diode. The irradiation was carried out with various energy and dose condition. The device was characterized by current-voltage, capacitance-voltage, and reverse recovery time measurements. Forward voltage drop was increased to 1.1 V at forward current of 5 A, which was $120\%$ of its original device. Reverse leakage current was 64 nA at reverse voltage of 100 V, and reverse breakdown voltage was 670 V which was the same voltage as original device without irradiation. The reverse recovery time of device was reduced to about $20\%$ compared to that of original device without irradiation.

• Nuclear Engineering and Technology
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• v.45 no.7
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• pp.941-950
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• 2013

The Korean Nuclear-Hydrogen Technology Development (NHTD) Plan will be performing irradiation testing of coated particle fuel at HANARO to support the development of VHTR in Korea. This testing will be carried out to demonstrate and qualify TRISO-coated particle fuel for use in VHTR. The testing will be irradiated in an inert gas atmosphere without on-line temperature monitoring and control combined with on-line fission product monitoring of the sweep gas. The irradiation device contains two test rods, one has nine fuel compacts and the other five compacts and eight graphite specimens. Each compact contains about 260 TRISO-coated particles. The irradiation device is being loaded and irradiated into the OR5 hole of the in HANARO core from August 2013. The device will be operated for about 150 effective full-power days at a peak temperature of about $1030^{\circ}C$ in BOC (Beginning of Cycle) during irradiation testing. After a peak burn-up of about 4 atomic percentage and a peak fast neutron fluence of about $1.7{\times}10^{21}\;n/cm^2$, PIE (Post-Irradiation Examination) of the irradiated coated particle fuel will be performed at IMEF (Irradiated Material Examination Facility). This paper reviews the design of test rod and irradiation device for coated particle fuel, and discusses the technical results for irradiation testing at HANARO.

• Journal of Korean Neurosurgical Society
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• v.43 no.1
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• pp.26-30
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• 2008

Objective : The authors developed a stereotactic device for irradiation of small animals with Leksell Gamma Knife Model C. Development and verification procedures were described in this article. Methods : The device was designed to satisfy three requirements. The mechanical accuracy in positioning was to be managed within 0.5 mm. The strength of the device and structure were to be compromised to provide enough strength to hold a small animal during irradiation and to interfere the gamma ray beam as little as possible. The device was to be used in combination with the Leksell G-$frame^{(R)}$ and $KOPF^{(R)}$ rat adaptor. The irradiation point was determined by separate imaging sequences such as plain X-ray images. Results : The absolute dose rate with the device in a Leksell Gamma Knife was 3.7% less than the value calculated from Leksell Gamma $Plan^{(R)}$. The dose distributions measured with $GAFCHROMIC^{(R)}$ MD-55 film corresponded to those of Leksell Gamma $Plan^{(R)}$ within acceptable range. The device was used in a series of rat experiments with a 4 mm helmet of Leksell Gamma Knife. Conclusion : A stereotactic device for irradiation of small animals with Leksell Gamma Knife Model C has been developed so that it fulfilled above requirements. Absorbed dose and dose distribution at the center of a Gamma Knife helmet are in acceptable ranges. The device provides enough accuracy for stereotactic irradiation with acceptable practicality.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1073-1077
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. The I-V, breakdown voltage, and turn-off delay time of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. For proton irradiated device, the breakdown voltage and the on-state voltage were 733 V and 1.85 V which were originally 749 V and 1.25 V, respectively. The turn-off time has been reduced to 170 ns, which was originally $6{\mu}s$ for the un-irradiated device. The proton irradiated device was superior to e-beam irradiated device for the breakdown voltage and the on-state voltage which were 698 V and 1.95 V, respectively, nevertheless turn-off time of proton irradiated device was reduced to about 60 % compared to that of the e-beam irradiated device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.14-15
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• 2007

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. The proton irradiation was carried out at 5.56 MeV energy from the back side of processed wafers and at 2.39 MeV energy from the front side of the wafers. The on-state and off-state I-V characteristics and switching properties of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. The proton irradiated device by 5.56 MeV energy was superior to e-beam irradiated device for the on-state and off-state I-V characteristics, nevertheless turn-off time of proton irradiated device was superior to that of the e-beam irradiated device.

• Biomedical Science Letters
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• v.15 no.1
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• pp.81-86
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• 2009

Lasers are necessity in our life related to the fields of medicine and cosmetic surgery. With 808 nm diode laser and $CO_2$ laser, we made some wounds on a dorsum of rat by laser irradiation. All of irradiations shows thermal effects on the whole region of skin tissues. They make wound damage depending on laser power and irradiation time. Because a collagen is plays an important role in tissue repair, we studied collagen accumulation in wound tissue. For wound healing, collagen accumulation was found in the near region of damage in epidermis and dermis layer of the rat skin. In case of the quantitative analysis of collagen in wound tissue, the amount of collagen in wound tissue by $CO_2$ laser irradiation is higher than that of 808 nm diode laser irradiation. And re-epithelialization was significantly faster in wound by $CO_2$ laser irradiation compared with that of 808 nm diode laser irradiation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.22-23
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. Characterization of the device was performed by I-V, breakdown voltage, threshold voltage, and turn-off delay time measurement. For irradiated device by 5.56 MeV energy, the breakdown voltage and the threshold voltage were 730 V and 6.5~6.6 V, respectively. The turn-off time has been reduced to 170 ns, which was original $6\;{\mu}s$ for the un-irradiated device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.300-300
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• 2008

In this study, the advanced DuoPIGatron-type ion beam (IB) system was applied to inorganic thin film for aligning liquid crystal (LC). LC alignment on $Ta_2O_5$ via IB irradiation was embodied. As a result of IB irradiation, the homogeneously aligned liquid crystal display (LCD) on $Ta_2O_5$ was observed with low pretilt angles. The $Ta_2O_5$ were deposited on indium-tin-oxide coated Coming 1737 glass substrates by rf magnetron sputtering at $200^{\circ}C$. The deposition process resulted in forming very uniform thin film on glass substrates without any defects. To confirm the application of the inorganic alignment on modem display optical devices, we fabricated twisted nematic LCD and measured optical property and response time. As a result of the experiment, the electro optical characteristics of the LCD fabricated by using IB irradiation on $Ta_2O_5$ alignment layer were similar with the other LCD fabricated by using rubbing process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.9
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• pp.25-31
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• 2020

In this study, for the safe use of a portable ultrasonic skin-beauty device, an android app was developed to show the irradiation locations of focused ultrasound to a user through augmented reality (AR) and enable stable self-surgery. The utility of the app was assessed through testing. While the user is making a facial treatment with the beauty device, the user's face and the ultrasonic irradiation location on the face are detected in real-time with a smart-phone camera. The irradiation location is then indicated on the face image and shown to the user so that excessive ultrasound is not irradiated to the same area during treatment. To this end, ML-Kit is used to detect the user's face landmarks in real-time, and they are compared with a reference face model to estimate the pose of the face, such as rotation and movement. After mounting a LED on the ultrasonic irradiation part of the device and operating the LED during irradiation, the LED light was searched to find the position of the ultrasonic irradiation on the smart-phone screen, and the irradiation position was registered and displayed on the face image based on the estimated face pose. Each task performed in the app was implemented through the thread and the timer, and all tasks were executed within 75 ms. The test results showed that the time taken to register and display 120 ultrasound irradiation positions was less than 25ms, and the display accuracy was within 20mm when the face did not rotate significantly.

• Biomedical Science Letters
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• v.14 no.3
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• pp.167-172
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• 2008

We compared the clinical efficacy of LED therapy using 880 nm and 630 nm LED to test collagen accumulations in subcutaneous tissue of mouse after LED irradiation by measuring the quantity of collagen. 880 nm and 630 nm LED was irradiated on the back of ICR mouse given at $10.8J/cm^2$ followed for 30 minutes everyday for 5 weeks. Histological observation was performed by Hematoxylin & Eosin staining and Masson's Trichrome collagen staining. We also used Sircol soluble collagen assay kit for measuring the amounts of collagen in the mouse skin tissue after 1, 3, and 5 weeks post LED irradiation, respectively. Collagen generation was found at subcutaneous tissue, and the quantity of collagen in 880 nm LED group had grown more than that of 630 nm LED group at 5 weeks follow-up later. About 75% more efficacies for collagen generation were found in the group of 5th week of 880nm LED irradiation. The efficacy of 880nm LED could be more useful than 630 nm LED for synthesizing collagens in mouse subcutaneous tissue as time followed.