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http://dx.doi.org/10.4313/JKEM.2006.19.12.1073

Improvement of Turn-off Switching Characteristics of the PT-IGBT by Proton Irradiation  

Choi, Sung-Hwan (경북대학교 전자전기컴퓨터공학부)
Lee, Yong-Hyun (경북대학교 전자전기컴퓨터공학부)
Kwon, Young-Kyu (위덕대학교 전자공학부)
Bae, Young-Ho (위덕대학교 전자공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.19, no.12, 2006 , pp. 1073-1077 More about this Journal
Abstract
Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. The I-V, breakdown voltage, and turn-off delay time of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. For proton irradiated device, the breakdown voltage and the on-state voltage were 733 V and 1.85 V which were originally 749 V and 1.25 V, respectively. The turn-off time has been reduced to 170 ns, which was originally $6{\mu}s$ for the un-irradiated device. The proton irradiated device was superior to e-beam irradiated device for the breakdown voltage and the on-state voltage which were 698 V and 1.95 V, respectively, nevertheless turn-off time of proton irradiated device was reduced to about 60 % compared to that of the e-beam irradiated device.
Keywords
Proton; Irradiation; Lifetime; Minority carrier; PT-IGBT;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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