• 제목/요약/키워드: Ionizing radiation effect

검색결과 152건 처리시간 0.026초

아리랑 2호의 방사능 환경 및 영향에 관한 분석(I)- TOTAL IONIZING DOSE 영향 중심으로 - (THE ANALYSIS ON SPACE RADIATION ENVIRONMENT AND EFFECT OF THE KOMPSAT-2 SPACECRAFT(I): TOTAL IONIZING DOSE EFFECT)

  • 백명진;김학정
    • Journal of Astronomy and Space Sciences
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    • 제18권2호
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    • pp.153-162
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    • 2001
  • 본 논문에서는 아리랑 2호가 운용될 궤도의 우주방사능 환경 및 total ionizing dose(TID) 영향에 대하여 분석하였다. 포획된 양자의 경우 SAA(South Atlantic Anomaly) 지역에 집중되어 있음을 알 수 있었으며, TID에 영향을 미치는 우주 방사능은 포획된 양자 및 전자와 태양양자임을 알 수 있었다. 저 에너지 입자는 알루미늄 차단 구조물을 이용하여 방사능 영향을 효과적으로 차단할 수 있음을 알 수 있었으나, 고 에너지 입자의 경우 구조물의 두께를 증가하여도 방사능 영향을 효과적으로 차단할 수 없음을 알 수 있었다. 아리랑 2호의 임무수명기간 동안 전자부품에 계속적으로 피폭되는 전체 방사량을 알루미늄 차단두께의 함수로 나타내었으며, 이 값들은 아리랑 2호의 전자부품의 선택기준 및 위성체 또는 구성품의 구조물 두께를 설정할 수 있는 기준으로 제시하였다.

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Recent Advances in Radiation-Hardened Sensor Readout Integrated Circuits

  • Um, Minseong;Ro, Duckhoon;Kang, Myounggon;Chang, Ik Joon;Lee, Hyung-Min
    • Journal of Semiconductor Engineering
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    • 제1권3호
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    • pp.81-87
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    • 2020
  • An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.

Effect of the Storage Temperature, Duration and Gamma Irradiation on the Respiration Rate and Sugar Content of Minituber 'Superior'

  • Lim, Ji-Hyeok;HwangBo, Jun-Kwon;Baek, Myung-Hwa;Kim, Jin-Hong;Kim, Jae-Sung;Lee, Myung-Chul
    • 한국환경농학회지
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    • 제24권1호
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    • pp.61-65
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    • 2005
  • This study was to evaluate whether ionizing gamma radiation could be applied to break the dormancy of a potato minituber. The respiration rate of the minitubers was significantly affected by the storage temperature and a low dose gamma radiation. Ionizing radiation of 8 Gy enhanced the respiration rate of the potato tuber stored at $10^{\circ}C$ for 20 days. The potato tuber subjected to 4 and 8 Gy after 40 days storage at 10 and $20^{\circ}C$ exhibited higher respiration rates compared to the control (non-irradiated), but not at st. However, the ionizing radiation did not exhibit on significant effect on the respiration rate of the potato tuber stored for 60 days. It was observed that minitubers stored for 20 days had significant response to the storage temperature in terms of the total sugar content the higher the storage temperature, the lower the total sugar content. It was measured that the reducing sugar content was increased under the storage conditions both 5 and $10^{\circ}C$ for 40 days, but not to $20^{\circ}C$. The total sugar contents in the minituber stored for 60 days were similar to those stored for 40 days. The data was discussed on the relationships among the storage duration, temperature and ionizing radiation.

Effects of Ionizing Radiation on Plants and the Radiological Protection of the Environment

  • Stanislav A. Geras'kin;Kim, Jin-Kyu
    • 환경생물
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    • 제21권4호
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    • pp.321-327
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    • 2003
  • Differences between the principles for the radiological protection of man and the environment are compared. The derived levels of exposure for man and biota recommended by the international agencies with dose rates for chronic radiation producing effects at different levels of biological organization were given in terms of the biological effects. Cytogenetic effects on plants after an exposure to ionizing radiation at low doses alone and in combination with other factors are discussed. A wide range of experimental data were analysed and the general conclusions were extracted to cover the topics such as non-linearity of dose response, synergistic and antagonistic effects of the combined exposure of different factors, radiation-induced genomic instability, and the phenomena of radioadaptation.

Effect of D-(+)-Glucose on the Stability of Polyvinyl Alcohol Fricke Hydrogel Three-Dimensional Dosimeter for Radiotherapy

  • Yang, Yuejiao;Chen, Jie;Yang, Liming;Chen, Bin;Sheng, Zhenmei;Luo, Wenyun;Sui, Guoping;Lu, Xun;Chen, Jianxin
    • Nuclear Engineering and Technology
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    • 제48권3호
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    • pp.608-612
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    • 2016
  • D-(+)-glucose (Glc) was added to the original Fricke polyvinyl alcohol-glutaraldehyde-xylenol orange (FPGX) hydrogel dosimeter system to make a more stable FPGX hydrogel three-dimensional dosimeter in this paper. Polyvinyl alcohol was used as a substrate, which was combined with Fricke solution. Various concentrations of Glc were tested with linear relevant fitting for optimal hydrogel production conditions. The effects of various formulations on the stability and sensitivity of dosimeters were evaluated. The results indicated that D-(+)-Glc, as a free radical scavenger, had a great effect on stabilizing the dose response related to absorbency and reducing the auto-oxidization of ferrous ions. A careful doping with Glc could slow down the color change of the dosimeter before and after radiation without any effect on the sensitivity of the dosimeter.

Implementation of a Radiation-hardened I-gate n-MOSFET and Analysis of its TID(Total Ionizing Dose) Effects

  • Lee, Min-Woong;Lee, Nam-Ho;Jeong, Sang-Hun;Kim, Sung-Mi;Cho, Seong-Ik
    • Journal of Electrical Engineering and Technology
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    • 제12권4호
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    • pp.1619-1626
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    • 2017
  • Electronic components that are used in high-level radiation environment require a semiconductor device having a radiation-hardened characteristic. In this paper, we proposed a radiation-hardened I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistors) using a layout modification technique only. The proposed I-gate n-MOSFET structure is modified as an I-shaped gate poly in order to mitigate a radiation-induced leakage current in the standard n-MOSFET structure. For verification of its radiation-hardened characteristic, the M&S (Modeling and Simulation) of the 3D (3-Dimension) structure is performed by TCAD (Technology Computer Aided Design) tool. In addition, we carried out an evaluation test using a $Co^{60}$ gamma-ray source of 10kGy(Si)/h. As a result, we have confirmed the radiation-hardened level up to a total ionizing dose of 20kGy(Si).

UVB Irradiation Increases the Expression of Pro-inflammatory Cytokine in Jurkat T Cells Exposed to Triglycerides

  • Jaewon Lim
    • 대한의생명과학회지
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    • 제29권4호
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    • pp.376-381
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    • 2023
  • Abscopal effect is a form of secondary immune response that occurs in ionizing radiation therapy, resulting in changes in the immune response through activation of immune cells such as macrophages and T lymphocytes. UVB causes DNA damage similar to ionizing radiation and causes similar intracellular reactions, so it is often used as an alternative in research on the effects of ionizing radiation. In a previous study, we found that pro-inflammatory cytokines, including TNF-α, increased in Jurkat T cells exposed to TGs. In this study, we confirmed the effects of UVB irradiation on T lymphocytes exposed to TGs, similar to the effects of ionizing radiation. As a result, it was shown that the mRNA expression of pro-inflammatory cytokines such as IL-1β and IFN-γ in Jurkat T cells exposed to TGs increased by UVB irradiation. In addition, it was confirmed that the increase in the expression of pro-inflammatory cytokines caused by UVB was caused by the activation of iNOS protein. This is very similar to the immune response that occurs when T lymphocytes are exposed to TGs. These results suggest that activation of iNOS protein is involved in the increase in pro-inflammatory cytokines caused by UVB irradiation in T lymphocytes exposed to TGs.

전리방사선 센서용 MOS Capacitors의 구조적 변화에 따른 감도 특성 분석 (Sensitivity Analysis of the Structural Characteristics of the MOS Capacitors for Sensing the Ionizing Radiation Effects)

  • 황영관;이남호;이현진
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.1181-1182
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    • 2008
  • The study presents the results of the analysis on the structural characteristics of MOS capacitor for sensing the ionizing radiation effect. Increasing the thickness of MOS capacitor's oxide layer enhanced the sensitivity of MOS capacitor under irradiation condition, but the sensitivity of irradiated MOS capacitor is uninfluenced by the area of MOS capacitor.

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