대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2008년도 하계종합학술대회
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- Pages.1181-1182
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- 2008
전리방사선 센서용 MOS Capacitors의 구조적 변화에 따른 감도 특성 분석
Sensitivity Analysis of the Structural Characteristics of the MOS Capacitors for Sensing the Ionizing Radiation Effects
- Hwang, Young-Gwan (Korea Atomic Energy Research Institute) ;
-
Lee, Nam-Ho
(Korea Atomic Energy Research Institute)
;
- Lee, Hyun-Jin (Korea Atomic Energy Research Institute)
- 발행 : 2008.06.18
초록
The study presents the results of the analysis on the structural characteristics of MOS capacitor for sensing the ionizing radiation effect. Increasing the thickness of MOS capacitor's oxide layer enhanced the sensitivity of MOS capacitor under irradiation condition, but the sensitivity of irradiated MOS capacitor is uninfluenced by the area of MOS capacitor.
키워드