• 제목/요약/키워드: Ion-pairs

검색결과 76건 처리시간 0.025초

Tetra-n-Butyl Ammonium Chloride에 의한 알코올류의 상전이 반응에 대한 선택 특이성 (A Selectivity Character for the Phase Transfer Reactions of Alcohols by Tetra-n-Butyl Ammonium Chloride)

  • 지종기;최원복;이광필
    • 분석과학
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    • 제8권1호
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    • pp.33-40
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    • 1995
  • 미량의 hydroxide 이온은 Tetra-n-Butyl Ammonium(TBAC)에 의해 수액상에서 유기상으로 추출될 수 있다. 일차 알코올류, 특히 다이올류의 적은 양을 첨가하면 상전이 촉매계의 거동이 급격히 변하고 과량의 염기를 유기상에서 발견할 수 있다. 정량 측정은 유기상에서 1차, 2차 알콕사이드와 다이올 음이온들의 추출한 양에 대해 행하였다. 한편, 일차 알코올류와 벤질 알코올의 추출에 대한 선택상수들은 수액상과 유기상에서 $Q^+RO^-$($Q^+$ : quaternary 양이온, $RO^-$ : 알콕사이드 이온)와 $Q^+Cl^-$과 같은 이온쌍들의 평형상수와 이 두 상간의 분배계수로 분리되었다. 따라서 $Q^+RO^-$의 선택성에 대한 전제 특성을 본 연구결과에서 언급된 여러 상수들에 대하여 자유에너지에 상응하는 값들을 사용해서 더욱 상세하게 논하였다.

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박막 소자 개발과 보론 확산 시뮬레이터 설계 (Shallow Junction Device Formation and the Design of Boron Diffusion Simulator)

  • 한명석;박성종;김재영
    • 대한공업교육학회지
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    • 제33권1호
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    • pp.249-264
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    • 2008
  • 본 연구에서는 저 에너지 이온 주입과 이중 열처리를 통하여 박막 $p^+-n$ 접합을 형성하였고, 보론 확산 모델을 가지고 새로운 시뮬레이터를 설계하여 이온 주입과 열처리 후의 보론 분포를 재현하였다. $BF_2$ 이온을 가지고 실리콘 기판에 저 에너지 이온 주입을 하였고, 이후 RTA(Rapid Thermal Annealing)와 FA(Furnace Annealing)를 통하여 열처리 과정을 수행하였다. 시뮬레이션을 위한 확산 모델은 점결함의 생성과 재결합, BI 쌍의 생성, 보론의 활성화와 침전 현상 등을 고려하였다. FA+RTA 열처리가 RTA+FA 보다 면저항 측면의 접합 특성에서 우수한 결과를 나타내었고, 시뮬레이터에서도 동일한 결과를 나타내었다. 따라서 본 연구를 통하여 박막접합을 형성할 때 열적 효율성을 고려하면 제안된 확산 시뮬레이터와 FA+RTA 공정 방법의 유용성을 기대할 수 있다.

납-티오황산 착물생성과 구리치환에 의한 미량 납(II)의 비색분석에 관한 연구 (Spectrophotometric Determination of Trace Lead(II) After Extraction of Lead-Thiosulfate Complex into Aliquat336-CHCl$_3$ and Replacement by Cu)

  • Lee, Seok-Ki;Joung, Chang-Ung
    • 한국환경보건학회지
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    • 제24권3호
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    • pp.1-5
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    • 1998
  • A spectrophotometric method was developed for the acidic solution stripped after an extraction of 0.5 to 2.5 ppm of Lead(II) from 50 mL of $Na_2S_2O_3$ solution into chloroform as the ion-pairs formed between their thiosulfate complexes and alkylamine, Aliquat336. Pb(II) in the stripped solution forms an complex with DDTC in pH 7.3 buffer solution, and was developed in yellow by copper replacement. The ydlow-colored solution have the maximum absorbance at 435 nm in the measurement of absorbance by UV-Visible spectrophotometer. The interference ions such as Fe(III), Hg (II), Al(III), Co, Cu, Ni, Zn, Ca, Sn, have great effects on the extraction, but they were overcomed by the usage of adequate masking agents before an extraction. At last, a good result was obtained in applying this method to synthetic water.

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Kinetic Modeling of Non-Isothermal Anionic Styrene-Butadiene Block Copolymerization And Its Industrial Applications

  • Park, Seung-Young;Yeon, Young-Joo;Lee, Jong-Ku
    • 한국고분자학회:학술대회논문집
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    • 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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    • pp.380-380
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    • 2006
  • Styrene-Butadiene diblock or styrene-butadiene-styrene triblock copolymers are industrially important materials for asphalt modification and adhesives. A kinetic modeling study on non-isothermal anionic styrene-butadiene diblock copolymerization system is presented. The model deals with the association/dissociation reaction of initiator and propagating ion pairs in its kinetic scheme. By comparing model calculation results with real plant data, it is possible to obtain useful ideas for more efficient plant operation. For example, the model clearly provides important relation between the reaction temperature profile and the conversion of monomers.

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Jet Measurements with High-Vision 3D-PTV

  • Doh D. H.;Kim D. H.;Cho Y. B.;Saga T.;Kobayashi T.;Pyun Y. B.
    • 한국가시화정보학회:학술대회논문집
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    • 한국가시화정보학회 2001년도 Proceedings of 2001 Korea-Japan Joint Seminar on Particle Image Velocimetry
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    • pp.6-13
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    • 2001
  • A new GA-3D-PTV technique has been constructed to measure an impinging jet. The measurement system consists of three CCD cameras, Ar-ion laser, an image grabber and a host computer. GA (Genetic Algorithm) was used based on one-to-one correspondences in order to take advantage of the combinatorial optimization in tracking the pairs of the whole particles of the two images having a time interval. Two fitness functions were introduced in order to enhance the correspondences of the particles. One was based on a concept of the continuum theory and the other one was based on a minimum distance error. The constructed GA-3D-PTV system was applied in success to the measurement of flow characteristics of the impinging jet.

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이단 냉각열처리에 의한 Co계 비정질 합금의 연자기 특성 향상 (Enhancement of the Soft Magnetic Properties of Co-based Amorphous Alloy by Two-step Cooling Method.)

  • 양재호;김만중;정연춘;김윤배;김택기
    • 한국자기학회지
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    • 제10권1호
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    • pp.7-10
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    • 2000
  • Co계 비정질합금을 400~46$0^{\circ}C$에서 열처리 한 후 냉각조건에 따른 자기특성의 변화를 조사하였다 42$0^{\circ}C$에서 30분 열처리 한 뒤 큐리점까지 노냉 후 수냉 시킨 경우 초투자율이 수냉 또는 노냉 했을 때보다 60-100% 정도 증가했다. 냉각속도에 따른 자기적 특성 변화를 내부음력 및 이온쌍의 규칙도(ordering) 관점에서 고찰하였다

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Photoinduced Charge-Transfer Association of Tetracyanoquinodimethane with Aminobiphenyls

  • Kim, Yong-Hee;Jung, Sang-Don;Chung, Myung-Ae;Song, Ki-Dong;Cho, Dae-Won
    • Bulletin of the Korean Chemical Society
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    • 제29권5호
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    • pp.948-952
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    • 2008
  • The molecular association of acceptors with electron donors is studied in the highly-polar solvent $CH_3CN$. Tetracyanoquinodimethane (TCNQ) forms a stable charge-transfer complex with donor molecules such as 4- aminobiphenyl (4-AB), benzidine (BD) and 2-aminobiphenyl (2-AB) with high association constants. The complexes of TCNQ with 4-AB or BD show new absorption bands at around 800 and 500 nm, which can be identified as reduced $TCNQ^{{\bullet}-}$ and $TCNQ^{2-}$ species, respectively. These bands grow quickly upon photoirradiation, implying that the charge-transfer complexes are easily formed in an excited state. Conversely, a small spectral manifestation of the charge transfer was observed in the case of 2-AB complex. It is demonstrated that the structural orientation between the geminate ion pairs could play an important role in building a stable complex.

Robustness of Complete Diallel cross designs with a Single Missing Observation

  • Kwon, Yong-Man;Lee, Jang-Jae
    • 통합자연과학논문집
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    • 제5권2호
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    • pp.135-138
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    • 2012
  • The reduction of efficiency of missing observations on complete diallel cross designs are examined. we studies robustness of optimal block designs for estimating general combining ability against loss of missing observations in diallel cross. A-efficiencies suggest that these designs are fairly robust. Simple g-inverses may be found for the information matrices of the line effects which allow evaluation of expressions for the variances of the differences between the pairs of line effects with missing observations. we numerically calculate the reduction of efficiency for estimating general combining ability against loss of missing observations in diallel cross.

Cathodoluminescence Enhancement of CaTiO3:Pr3+ by Ga Addition

  • Kang, Seung-Youl;Byun, Jung-Woo;Kim, Jin-Young;Suh, Kyung-Soo;Kang, Seong-Gu
    • Bulletin of the Korean Chemical Society
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    • 제24권5호
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    • pp.566-568
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    • 2003
  • The phosphor $CaTiO_3:Pr^{3+}$ attracts much attention as a low-voltage red phosphor because of its good chromaticity and intrinsic conductivity. The addition of Ga into this CaTiO₃:Pr led the luminance intensity to greatly enhance without the change of the wavelength for the electronic transition and the peak shape of it. The increase of the recombination rate of electron-hole pairs through the Ga ion doping, which was expected to play a role of a hole-trap center, is proposed to be one of the reasons for the enhancement of the cathodoluminescence intensity.

박막 P+-n 접합 형성과 보론 확산 시뮬레이터 설계 (Shallow P+-n Junction Formation and the Design of Boron Diffusion Simulator)

  • 김재영;이충근;김보라;홍신남
    • 한국전기전자재료학회논문지
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    • 제17권7호
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    • pp.708-712
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    • 2004
  • Shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes. The dopant implantation was performed into the crystalline substrates using BF$_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth and sheet resistance. A new simulator is designed to model boron diffusion in silicon. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using initial conditions and boundary conditions, coupled diffusion equations are solved successfully. The simulator reproduced experimental data successfully.