• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.115-117
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• 2005

In this paper, we formed the shallow junction by preamorphization and low energy ion implantation. And a simulator is designed for predicting the annealing process results. Especially, if considered the applicable to single step annealing process(RTA, FA) and dual step annealing process(RTA+FA, FA+RTA). In this simulation, the ion implantation model and the boron diffusion model are used. The Monte Carlo model is used for the ion implantation. Boron diffusion model is based on pair diffusion at nonequilibrium condition. And we considered that the BI-pairs lead the diffusion and the boron activation and clustering reaction. Using the boundary condition and initial condition, the diffusion equation is solved successfully. The simulator is made ofC language and reappear the experimental data successfully.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.346-349
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• 2002

High Power and high dose ion implantation is essentially needed to make power MOSFET devices based on SiC wafers, because the diffusivities of the impurities such as Al, N, p, B in SiC crystal are very low. In addition, it is needed high temperature annealing for electrical activation of the implanted species. Due to the very high annealing temperature, the surface morphology after electrical activation annealing becomes very rough. We have found the different surface morphologies between implanted and unimplanted region. The unimplanted region showed smoother surface morphology It implies that the damage induced by high energy ion implantation affects the roughening mechanism. Some parts of Si-C bonding are broken in the damaged layer, s\ulcorner the surface migration and sublimation become easy. Therefore the macrostep formation will be promoted. N-type 4H-SiC wafers, which were Al ion implanted at acceleration energy ranged from 30kev to 360kev, were activated at 1600$^{\circ}C$ for 30min. The pre-activation annealing for damage relaxation was performed at 1100-1500$^{\circ}C$ for 30min. The surface morphologies of pre-activation annealed and activation annealed were characterized by atomic force microscopy(AFM).

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.143-150
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• 2000

Wet-chemical process using ammonia to precipitate aluminum ion dissolved in a zirconia sol solution is examined. Formation of crystalline bayerite is unfavorable for fine dispersion of zirconia nanoparticles in alumina matrix after heat treatment. To avoid the bayerite formation, it was preferred to make a precipitation with a diluted ammonia or with an ammonia gas flow at high temperature. By optimizing the precipitation process and the calcination temperature, we successfully prepared the uniform microstructure in which tetragonal zirconia particles of ∼30nm is finely dispersed within the alumina grains.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.36-39
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• 2014

Formation mechanism of residual carbon layer, frequently observed in the $CuInSe_2$ (CIS) thin film prepared by direct solution coating routes, was investigated in order to find a way to eliminate it. As a model system, a methanol solution with dissolved Cu and In salts, whose viscosity was adjusted by adding ethylcellulose (EC), was chosen. It was found that a double layer, a top metal ion-derived film and bottom EC-derived layer, formed during an air drying step presumably due to different solubility between metal salts and EC in methanol. Consequently, the top metal ion-derived film acts as a barrier layer inhibiting further thermal decomposition of underlying EC, resulting a formation of bottom carbon residue layer.

• Korean Chemical Engineering Research
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• v.55 no.4
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• pp.535-541
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• 2017

On the basis of 200 ppm of Ag and 120 l/h of feed flow rate, we built a pilot plant of an ion exchange fiber system having an double tube type ion exchange chamber with strong base ion exchange fiber (FIVAN A-6) which was designed to replace fibers easily and to eliminate the need for a fixture. The following results were obtained for the double tube type of ion exchange fiber system with an ion exchange capacity of 4.6 meq/g for Ag. The adsorption process was operated in the range of 40~90 l/h after confirming the effect of the flow rate and, pH did not affect formation of complex ion of Ag in the range of pH 7~12. In the case of backwash process, the recovery rate of Ag was tested in the range of 60~120 l/h and comparative experiments were carried out using NaOH, $NH_4Cl$, and NaCl as the chemicals for backwash. Although the desorption time was shortened at higher concentration, the desorption efficiency per mol was lowered. Therefore, it was confirmed that the desorption time and the concentration should be well balanced to operate economically. The desorption pattern of the backwash process is slower than the adsorption process and takes a lot of time. The results showed that the Ag adsorption ratio was 99.5% or more and the Ag recovery ratio was 96% or more, and commercialization was possible.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.59-63
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$ This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Journal of the Semiconductor & Display Technology
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• v.13 no.2
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• pp.29-35
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• 2014

In this study general solar cell production process was complemented, with research on improvement of solar cell efficiency through surface structure and thermal annealing process. Firstly, to form the pyramid structure, the saw damage removal (SDR) processed surface was undergone texturing process with reactive ion etching (RIE). Then, for the formation of smooth pyramid structure to facilitate uniform doping and electrode formation, the surface was etched with HND(HF : HNO3 : D.I. water=5 : 100 : 100) solution. Notably, due to uniform doping the leakage current decreased greatly. Also, for the enhancement and maintenance of minority carrier lifetime, antireflection coating thermal annealing was done. To maintain this increased lifetime, front electrode was formed through Au plating process without high temperature firing process. Through these changes in two processes, the leakage current effect could be decreased and furthermore, the conversion efficiency could be increased. Therefore, compared to the general solar cell with a conversion efficiency of 15.89%, production of high efficiency solar cell with a conversion efficiency of 17.24% was made possible.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.3
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• pp.294-301
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• 1988

A study on the lattice damages and impurity depth profiles have been performed with BF2 ion implanted silicon materials. Electrical measurement, SIMS and TEM analysis techniques were used in order to identify the reverse annealing phenomena, impurity depth profiles and lattice damages. A typical reverse annealing phenomena were shown at the dose of 1x10**15/cm\ulcorner and non-reverse annealing at the dose of 5x10**15/cm\ulcorner This was explained with the formation of the amorphous region at BF2+ ion implantation with high dose. That is, the amorphous reigons were recrystallized centrated at certain regions were measured by SIMS technique. The dislocation loops-like crystalline defects were observed with TEM cross sections, which were formed at the lattice damaged region during annealing process.

• Journal of Surface Science and Engineering
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• v.25 no.6
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• pp.299-308
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• 1992

Titanium nitride(TiN) has been synthesized by nitrogen ion irradiation onto the Ti thin film deposited on STD11 and SKH9 tool materials. The effect of irradiation flux and substrate temperature on the formation behavior and mechanical properaties of TiN were investigated through X-ray diffraction analysis, hardness and pin-on-disc wear testings. Nitrogen ion irradiation onto arc evaporated Ti thin film produced TiN of < 200> orientation at elevated temperature and thereby enhancing surface microhardness by 50% at maximum. Wear resistance was also improved by nitrogen irradiation at most process conditions. The enhancement of wear resistance appeared to be more effective for the nitrogen irradiated conditions at room temperature than at elevated temperature.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.20-24
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• 2017

Currently, techniques mainly used in semiconductor impurity diffusion processes include furnace thermal diffusion, ion implantation, and vacuum plasma doping. However, there is a disadvantage that the process equipment and the unit cost are expensive. In this study, boron diffusion process using relatively inexpensive atmospheric plasma was conducted to solve this problem. With controlling parameters of Boron diffusion process, the doping characteristics were analyzed by using secondary ion mass spectrometry. As a result, the influence of each variable in the doping process was analyzed and the feasibility of atmospheric plasma doping was confirmed.