• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.159-162
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• 2002

Ferroelectric $YMnO_{3}$ thin films were etched with $Ar/Cl_{2}$ and $CF_{4}/Cl_{2}$ inductivly coupled plasma (ICP). The maximum etch rate of $YMnO_{3}$ thin film was $300{\AA}/min$ at a $Ar/Cl_{2}$ gas mixing ratio of 2/8, a RF power of 800 W, a dc bias of 200 V, a chamber pressure of 15 mTorr, and a substrate temperature of ${30^{\circ}C}$. From the X-ray photoelectron spectroscopy (XPS) analysis ， yttrium not only etched by chemical reactions with Cl radicals, but also assisted by Ar ion bombardments in $Ar/Cl_{2}$ plasma. In $CF_{4}/Cl_{2}$ plasma, yttrium are remained on the etched surface of $YMnO_{3}$ and formed of nonvolatile YFx compounds Manganese etched effectively by chemical reactions with Cl and F radicals. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the $YMnO_{3}$ thin film etched in $Ar/Cl_{2}$ plasma shows lower value than that in $CF_{4}/Cl_{2}$ plasma. It is indicates that the crystallinty of $YMnO_{3}$ thin film is more easily damaged by the Ar ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.

• Proceedings of the Korea Concrete Institute Conference
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• 2008.04a
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• pp.537-540
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• 2008

Up to now, the RC structures have been recognized as being socially semi-permanent. But in recent years there were reports about the cases of early deterioration of RC structures. Most of all pore structure effects on the durability of concrete as well as mechanical properties of concrete. Therefore, in this study, mixing design was proportioned with the water-binder ratio 0.55 binder compositions corresponding to cement without any supplementary materials(OPC), cement with 50% blast-furnace slag replacement (BFS50), cement with 15% fly ash replacement (FA15), and ternary cement with cement, 15% fly ash, and 35% slag replacement (BFS35+FA15). And this study is to compare pore structure property of concrete by carbonation to investigate the effect of the permeation of deterioration factors such as $CO_2$ and chloride ion under the combined deterioration environments. The results showed that pore volume effects on the diffusibility of chloride ion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.826-830
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• 2013

In this paper, we carried out the investigations of both etch characteristics and mechanisms for the $SnO_2$ thin films in $O_2/BCl_3/Ar$ plasma. The dry etching characteristics of the $SnO_2$ thin films was studied by varying the $O_2/BCl_3/Ar$ gas mixing ratio. We determined the optimized process conditions that were as follows: a RF power of 700 W, a DC-bias voltage of - 150 V, and a process pressure of 2 Pa. The maximum etch rate was 509.9 nm/min in $O_2/BCl_3/Ar$=(3:4:16 sccm) plasma. From XPS analysis, the etch mechanism of the $SnO_2$ thin films in the $O_2/BCl_3/Ar$ plasma can be identified as the ion-assisted chemical reaction while the role of ion bombardment includes the destruction of the metal-oxide bonds as well as the cleaning of the etched surface form the reaction products.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.44-55
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• 1996

Emerald (3BeO{\cdot}Al$_{2}$O_{3}{\cdot}6SiO_2 : Cr^{3+}$) single crystals were grown by flux method of $Li_2O-MoO_3 - V_2O_5$ system. The composition of starting materials were 1, 3, 5 mole ratio of $MoO_3 - V_2O_5/$Li_2O$, 20 - 15% of emerald content to flux composition and 1% of $Cr_2O_3$ colordopant to emerald composition. After mixing those were melted at $1100^{\circ}C$ in Pt crucible of electric furnace. Single crystal growth was cooled down slowly rate of $3^{\circ}C$/hr from $1100^{\circ}C$ to $650^{\circ}C$, for the cooling period it was controlled and prevented the nucleation of microcrystallite from variation of each thermal fluctuation range. Specially it has been obtained plenty of large emerald single crystal when thermal fluctuation was treated for cooling period at $1050 ~ 950^{\circ}C$, in 3 mole ratio of $V_2O_5 - MoO_3/Li_2O$ flux. Emerald single crystal growing effect and $Cr_{+3}$ ion of substitutional solid solution effect for $Al_{+3}$ ion was good than mole ratio of 5. Emerald single crystals were c (0001) hexagonal rystal face of preferencial direction and m (1010) post side. Emerald was hexagonal columnar greenish transparent and 2.65 ~ 2.66 of specific gravity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• Journal of Surface Science and Engineering
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• v.36 no.1
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• pp.27-33
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• 2003

Pulsed magnetron sputtering of graphite target was employed for deposition of diamond-like carbon (DLC) films. Time-resolved probe measurements of magnetron discharge plasma have been performed. It was shown that the pulsed magnetron discharge plasma density ($∼10^{17}$ $m^{-3}$ ) is close to that of vacuum arc cathode sputtering of graphite. Raman spectroscopy was sed to examine DLC films produced at low ( $U_{sub}$ / < 1 kV) pulsed bias voltages applied to the substrate. It has been shown that maximum content of diamond-like carbon in the coating (50-60%) is achieved at energy per deposited carbon atom of $E_{c}$ =100 eV. In spite of rather high percentage of $sp^3$-bonded carbon atoms and good scratch-resistance, the films showed poor adhesion because of absence of ion mixing between the film and the substrates. Electric breakdowns occurring during the deposition of the insulating DLC film also thought to decrease its adhesion.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.147-147
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• 2013

Multiferroic material $BiFeO_3$ (BFO) is a typical multiferroic material with a room-temperature magnetoelectric coupling in view of high magnetic- and ferroelectric-ordering temperatures (Neel temperature $T_N$ ~ 647 K and Curie temperature TC ~1,103 K). Rare-earth ion substitution at the Bi sites is very interesting, which induces suppressed volatility of the Bi ion and improved ferroelectric properties. At the same time, the Fe-site substitution with magnetic ions is also attracting, since the enhanced ferromagnetism was reported. In this study, BFO, $Bi_{0.9}Dy_{0.1}FeO_3$ (BDFO), $BiFe_{0.97}Co_{0.03}O_3$ (BFCO) and $Bi_{0.9}Dy_{0.1}Fe_{0.97}Co_{0.03}O_3 $ (BDFCO) compounds were prepared by conventional solid-state reaction and wet-mixing method. High-purity $Bi_2O_3$, $Dy_2O_3$, $Fe_2O_3$ and $Co_3O_4$ powders with the stoichiometric proportions were mixed, and calcined at $500^{\circ}C$ for 24 h. The samples were immediately put into an oven, which was heated up to 800oC and sintered in air for 1 h. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The field-dependent magnetization measurements were performed with a vibrating-sample magnetometer. The electric polarization was measured at room temperature by using a standard ferroelectric tester (RT66B, Radiant Technologies). Dy and Co co-doping at the Bi and the Fe sites induce the enhancement of both magnetic and ferroelectric properties of $BiFeO_3$.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1188-1195
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• 1999

The effect of aluminosilicate sol on the formation of mullite layer in zircon shell mold was investigated. Aluminosilicate sol was prepared by mixing of colloidal silica(NALCO(R) 1130) and an aqueous solution of aluminium nitrate at room temperature. The sol gelled at 50$^{\circ}C$ for 48 hrs. It was identified that the gel consists of aluminosilicate complexes and gibbsite. The coordination number of all aluminium ion bonded with silicon ion was four. Mullite phase formed by sintering above 1300$^{\circ}C$. XRD peak of mullite sharpened with increasing sintering temperature and the content of aluminium nitrate. Mullite phase displayed whisker-like 0.5~5${\mu}m $ particles. Separation between 1st and 3rd layers during sintering and the difference in thermal expansion coefficient between residual silica and mullite.

• Journal of Powder Materials
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• v.26 no.1
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• pp.49-57
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• 2019

Layered $LiNi_{0.83}Co_{0.11}Mn_{0.06}O_2$ cathode materials single- and dual-doped by the rare-earth elements Ce and Nd are successfully fabricated by using a coprecipitation-assisted solid-phase method. For comparison purposes, non-doping pristine $LiNi_{0.83}Co_{0.11}Mn_{0.06}O_2$ cathode material is also prepared using the same method. The crystal structure, morphology, and electrochemical performances are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) mapping, and electrochemical techniques. The XRD data demonstrates that all prepared samples maintain a typical ${\alpha}-NaFeO_2$-layered structure with the R-3m space group, and that the doped samples with Ce and/or Nd have lower cation mixing than that of pristine samples without doping. The results of SEM and EDS show that doped elements are uniformly distributed in all samples. The electrochemical performances of all doped samples are better than those of pristine samples without doping. In addition, the Ce/Nd dual-doped cathode material shows the best cycling performance and the least capacity loss. At a 10 C-rate, the electrodes of Ce/Nd dual-doped cathode material exhibit good capacity retention of 72.7, 58.5, and 45.2% after 100, 200, and 300 cycles, respectively, compared to those of pristine samples without doping (24.4, 11.1, and 8.0%).

• Journal of the Korean Recycled Construction Resources Institute
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• v.10 no.1
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• pp.48-55
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• 2022

This study uses the recovered water as mixing water and artificial lightweight aggregate pre-wetting water as part of a study to increase the recycling rate and reduce greenhouse gas of the ready-mixed concrete recovered during the concrete transport process, and cement fine powder of blast furnace slag(BFS) and fly ash(FA). The engineering characteristics of the three-component lightweight aggregate mortar used as a substitute were reviewed. For this purpose, the flow, dry unit mass, compressive strength, drying shrinkage, neutralization depth, and chloride ion penetration resistance of the three-component lightweight aggregate mortar were measured. When used together with the formulation, when 15 % of BFS and 5 % of FA were used, it was found to be positive in improving the compressive strength and durability of the mortar.