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http://dx.doi.org/10.4313/JKEM.2013.26.11.826

A Study on Etching Characteristics of SnO2 Thin Films Using High Density Plasma  

Kim, Hwan-Jun (School of Electrical and Electronics Engineering, Chung-Ang University)
Joo, Young-Hee (School of Electrical and Electronics Engineering, Chung-Ang University)
Kim, Seung-Han (School of Electrical and Electronics Engineering, Chung-Ang University)
Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University)
Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.11, 2013 , pp. 826-830 More about this Journal
Abstract
In this paper, we carried out the investigations of both etch characteristics and mechanisms for the $SnO_2$ thin films in $O_2/BCl_3/Ar$ plasma. The dry etching characteristics of the $SnO_2$ thin films was studied by varying the $O_2/BCl_3/Ar$ gas mixing ratio. We determined the optimized process conditions that were as follows: a RF power of 700 W, a DC-bias voltage of - 150 V, and a process pressure of 2 Pa. The maximum etch rate was 509.9 nm/min in $O_2/BCl_3/Ar$=(3:4:16 sccm) plasma. From XPS analysis, the etch mechanism of the $SnO_2$ thin films in the $O_2/BCl_3/Ar$ plasma can be identified as the ion-assisted chemical reaction while the role of ion bombardment includes the destruction of the metal-oxide bonds as well as the cleaning of the etched surface form the reaction products.
Keywords
$SnO_2$; Etching; Inductively coupled plasma; $BCl_3$; XPS;
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1 J. F. Wager, Transparent Electronics Display Applications (SID 07 Digest, 2007) p. 1824.
2 M. Prins, S. Zinnemers, J. Cillessen, and J. Giesbers, Appl. Phys. Lett., 70, 458 (1997).   DOI   ScienceOn
3 R. Presley, C. Munsee, C. Park, D. Hong, J. Wager, and D. Keszler, J. Phys. D, Appl. Phys., 37, 2810 (2004).
4 H. Hidenori, N. Kenji, Y. Hiroshi, K. Toshio, H. Masahiro, and H. Hideo, Appl. Phys. Lett., 93, 032113 (2008).   DOI   ScienceOn
5 Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Kimura, M. Hirano, and H. Hosono, Physica Status Solidi., 206, 2187 (2009).   DOI   ScienceOn
6 X. Yang, J. C. Woo, D. S. Um, and C. I. Kim, Trans. Electr. Electron. Mater., 11, 202 (2010).   DOI   ScienceOn
7 S. I. Kim and K. H. Kwon, Trans. Electr. Electron. Mater., 10, 1 (2009).   DOI   ScienceOn
8 J. Szuber, G. Czempik, R. Larciprete, and B. Adamowicz, Sensr and Actuators., 70, 177 (2000).   DOI   ScienceOn
9 J. Szuber, G. Czempik, R. Larciprete, D. Koziej, and B. Adamowicz, Thin Soild Films, 391, 198 (2001).   DOI   ScienceOn
10 M. Kwoka, L. Ottaviano, M. Passacantando, S. Santucci, G. Czempik, and J. Szubera, Thin Solid Films, 490, 36 (2005).   DOI   ScienceOn