• Applied Chemistry for Engineering
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• v.7 no.6
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• pp.1132-1141
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• 1996

Heterogeneous cation exchange membrane(HCEM) was prepared with LLDPE(Linear Low Density Poly-ethylene) as binder, powdered cation exchange resins($diameter{\leq}149{\mu}m$) as ion-exchange material and glycerol as additive for electrodialysis and electrodeionization system. The weight ratio of (binder/ion exchange)/glycerol was (60%/40%)/5%, (55%/45%)/5%, (50%/50%)/5% and (40%/60%)/5%. The characterization of prepared HCEM was evaluated on mechanical, electrochemical, morphology and ion permeable properties. It was compared with commercial membrane. Electrochemical properties of HCEM of (50%/50% )/5% were very similar to value of IONPURE(commercial membrane), in which ion exchange capacity, ion transfer number and membrane resistance were to be 1.733meq/g, 0.96 and $16.08{\Omega}/cm^2$, respectively. Ion permeability of the membrane was better than that of IONPURE membrane. Compared with IONPURE membrane, the HCEM had a higher tensile strength and lower elongation and modulus, in which HCEM had tensile strength of $62.33kg/cm^2$, elongation of 87.42% and modulus of $658.53kg/cm^2$. The HCEM of (50%/50% )15% was optimum combination.

• Membrane Journal
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• v.26 no.2
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• pp.97-107
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• 2016

This study was carried out to prepare a heterogeneous cation exchange membrane by mixing polyvinylidene fluoride (PVDF), commercial cation exchange resin and sulfonated poly(phenylene oxide)(SPPO) in order to propose an optimum condition for the preparation, and to compare its properties with commercial membrane. Study results show that the ion exchange capacity and electrical resistance were outstanding when the ratio of polymer matrix was less than 30% comparing between PVDF-IER, PVDF-SPPO and PVDF-SPPO-IER. The tensile strength was confirmed that seemed a hard look was five times greater compared to the commercial heterogeneous membrane, despite the weak durability of PVDF resin. Therefore, when chemical and mechanical properties are considered, the optimum mixing ratio between PVDF, IER and SPPO was 30 : 70, at which electric resistance was measured as $3{\sim}5{\Omega}{\cdot}cm^2$, ion exchange capacity as 0.6~1.0 meq/g, while mechanical strength was in a range of $12{\sim}15kgf/cm^2$.

• Journal of Surface Science and Engineering
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• v.41 no.5
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• pp.189-193
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• 2008

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$ and $HfO_2$) of TiN thin films in the $CH_4$/Ar inductively coupled plasma. The maximum etch rate of $274\;{\AA}/min$ for TiN thin films was obtained at $CH_4$(80%)/Ar(20%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as RF power, Bias power, and process pressure. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4$ containing plasmas.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.12-15
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• 2013

In this study, we carried out an investigation of the etching characteristics (etch rate, and selectivity to $SiO_2$) of $ZrO_2$ thin films in a $CF_4$/Ar inductively coupled plasma (ICP) system. The maximum etch rate of 60.8 nm/min for $ZrO_2$ thin films was obtained at a 20 % $CF_4/(CF_4+Ar)$ gas mixing ratio. At the same time, the etch rate was measured as a function of the etching parameter, namely ICP chamber pressure. X-ray photoelectron spectroscopy (XPS) analysis showed efficient destruction of the oxide bonds by the ion bombardment, as well as an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch characteristics for the $CF_4$-containing plasmas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.996-1002
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• 2000

Ferroelectric (Ba, Sr) TiO$_3$(BST) thin films have attracted much attention for use in new capacitor materials of dynamic random access memories (DRAMs). In order to apply BST to the DRAMs, the etching process for BST thin film with high etch rate and vertical profile must be developed. However, the former studies have the problem of low etch rate. In this study, in order to increase the etch rate, BST thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) that have much higher plasma density than RIE (reactive ion etching) and ICP (inductively coupled plasma). Experiment was done by varying the etching parameters such as CF$_4$/(CF$_4$+Ar) gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 170nm/min under CF$_4$/CF$_4$+Ar) of 0.1, 600 W/-350 V and 5 mTorr. The selectivities of BST to Pt and PR were 0.6 and 0.7, respectively. Chemical reaction and residue of the etched surface were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.12-16
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• 2001

We investigated the etching characteristics of $YMnO_3$ thin films in high-density plasma etching system. In this study. $YMnO_3$ thin films were etched with $CF_{4}/Ar$ gas chemistries in inductively coupled plasma (ICP). Etch rates of $YMnO_3$ were measured according to gas mixing ratios. The maximum etch rate of $YMnO_3$ is 18 nm/min at $CF_{4}/(CF_{4}+Ar)$ of 20%. In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing $CF_4$ content. Chemical states of $YMnO_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. $YF_x$, $MnF_x$ such as YF, $YF_2$, $YF_3$ and $MnF_3$ Were detected using SIMS analysis. The etch slope is about $65^{\circ}C$ and free of residues.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.46-50
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• 2002

C-SiC films with different content of SiC on stainless steel substrate were prepared with ion beam mixing. It was found that hydrogen concentrations in C-SiC coatings was higher than that in stainless steel after H$\^$+/ ion implantation followed by thermal annealing. Infrared (IR) transmission measurement was used to study the mechanism of hydrogen retention by C-SiC films. The vibrational features in the range between 400 and 3200 cm$\^$-1/ in IR transmission spectra show the Si-CH$_3$, Si-CH$_2$, Si-H, CH$_2$and CH$_3$bonds, which are responsible for retaining hydrogen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.933-938
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• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.29-32
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• 2004

This work was devoted to an investigation of etching mechanisms for $(Ba,Sr)TiO_3$ (BST) thin films in inductively coupled $CF_4/Ar$ plasma. We have found that an increase of the Ar content in $CF_4/Ar$ plasma causes non-monotonic behavior of BST etch rate, which reaches a maximum value of 40 nm/min at 80% Ar. Langmuir probe measurements show a weak sensitivity of both electron temperature and electron density to the change of $CF_5/Ar$ mixing ratio. O-D model for plasma chemistry gave monotonic changes of both volume densities and fluxes for active species responsible for the etching process. The analysis of surface kinetics confirms the possibility of non-monotonic etch rate behavior due to the concurrence of physical and chemical pathways in ion-assisted chemical reaction.

• Transactions of the Korean Society of Mechanical Engineers
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• v.14 no.6
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• pp.1661-1668
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• 1990

In a turbulent premixed flame stabilized by the streamline step, and dominated by a coherent eddy, a flame micro-structure was investigated with analyzing the signals of temperature, the ion current, and schieren phtographs simultaneously. Generally the contours of large scale coherent eddies of schlieren photographs was considered as the flame front, however, the main reaction can be occurred within the eddy as a structure of fine flamelets scale. The surrounding burned gas of flamelets could not propagate to a unburned mixture, obstructing flamelets from propagating to a unburned mixture. Consequently, it could restrain flashback. The main reaction region was found to be located at higher temperature of the burned gas rather than at maximum rms of fluctuating temperature. The peak probability of higher temperature was 6 times greater than that of lower temperature. As it was difficult to infer a flame structure from PDF distribution of the fluctuating temperature in form of bimodal shape, it should be taken into consideration with other informations related to the sensitive flame front, for instance, ion current.