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http://dx.doi.org/10.4313/JKEM.2002.15.11.933

The Etching Characteristics of (Ba0.6Sr0.4)TiO3 films Using Ar/CF4 Inductively Coupled Plasma  

강필승 (중앙대학교 전자전기공학부)
김경태 (중앙대학교 전자전기공학부)
김동표 (중앙대학교 전자전기공학부)
김창일 (중앙대학교 전자전기공학부)
이수재 (ETRI 반도체 원천 기술 연구소)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.15, no.11, 2002 , pp. 933-938 More about this Journal
Abstract
(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.
Keywords
BST; Sol-Gel; ICP; OES; XPS; SIMS;
Citations & Related Records
Times Cited By KSCI : 6  (Citation Analysis)
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