• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.401-406
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• 1998

For the applications in optical waveguides and devices, LiNbO_3$ single crystals need to overcome the weakness of optical damage due to the inhomogeneities of laser-induced refractive index. This problem can be solved by doping of Mg in LiNbO_3$ and proton exchange of LiNbO_3$. In this study, to understand the mechanism of optical damage resistance in LiNbO_3$, the changes of lattice defects in LiNbO_3$ caused by MgO doping and acid treatment were observed indirectly by $OH^-$ absorption bands using a FT-IR spectrophotometer. The effect of lattice defects on temperature, heat-treatment and polishing were also investigated. It is shown that MgO doping increases optical damage resistance by generating the defects of $Mg_{Nb}^{2+}$ in the lattice of LiNbO_3$, and that proton exchange by implantation of $H^+$ ion in the hexagonally closest packed oxygen layers on the surface of LiNbO_3$, makes lattice defects, which diffuse into the crystal after heat-treatment above $400^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.213-224
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• 2010

An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.213-218
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• 2011

The load cell is a force sensor and a transducer that is used to convert a physical force into a electrical signal for weighing equipment. Most conventional load cells are widely used a metal foil strain gauge for sensing element when force being applied spring element in order to converts the deformation to electrical signals. The sensitivity of a load cell is limited by its low gauge factor, hysteresis and creep. But silicon-based sensors perform with higher reliability. This paper presents the basic design and development of the silicon type load cell with an SUS630 diaphragm. The load cell consists of two parts the silicon strain gauge and the SUS630 structure with diaphragm. Structure analysis of load cell was researched by theory to optimize the load cell diaphragm design and to determine the position of peizoresistors on a silicon strain gauge. The piezo-resistors are integrated in the four points of silicon strain gauge processed by ion implantation. The thickness of the silicon strain gauge was polished by CMP under 100 ${\mu}M$. The 10 mm diameter SUS630 diaphragm was designed for loads up to 10 kg with 300 ${\mu}M$ of diaphragm thickness. The load cell was successfully tested, the variation of ${\Delta}$R(%) of four points on the silicon strain gauge is good linearity properties and sensitivity.

• Proceedings of the Korean Vacuum Society Conference
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• 1992.02a
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• pp.17-18
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• 1992

SIMS is an indispensable surface analysis instrument in trace element depth p profiling because of high detection sensitivity and excellent depth r resolution, however, it requires standard sample to do quantitative analysis d due to matrix effect depending on the species of impurities and sample m matricies and on the sputtering rates. A Among the SNMS technology developed to supply the deficiency, we researched i into CsX+ SNMS which improved the resul t quanti tati vely wi thout any extra epuipments. So basic SNMS functions were confirmed through matrix element composition rate a analysis using Si02 layer etc. and adaptability to trace element c concentration analysis was tried. For that purpose we compared SIMS depth profile data for Boron which presented s strong matrix effect on account of Fluorin existence after BF2 ion implantation on silicon substrate with SNMS data. d dynamic range were investigated. A After these experements we concluded that CsX+ SNMS reduced matrix effect and we could apply it to profile impurity elements.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.115-120
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• 1992

SIMS is an indispensable surface analysis instrument in trace element depth profiling because of high detection sensitivity and excellent depth resolution, however, it requires a standard sample to do quantitative analysis due to matrix effect depending on the species of impurities and sample matricies and on the sputtering rates. Among the SNMS technology developed to supply the deficiency, we researched into CsX+ SNMS which improved the result quantitatively without any extra epuipments. So basic SNMS functions were confirmed through matrix element composition rate analysis using Siq layer etc., and adaptability to trace element concentration alaysis was tried. For that purpose we compared SIMS depth profile data for Boron which presented strong matrix effect on account of Fluorin existence after BF2 ion implantation on silicon substrate with SNMS data. Also detection limit and dynamic range were investigated. After these experements we concluded that CsX+ SNMS reduced matrix effect and we could apply it to profile impurity elements.

• Journal of the Korean Institute of Gas
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• v.16 no.6
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• pp.143-147
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• 2012

Photocatalytic properties of $TiO_2$ nanopowders has been received much attention due to their high potentials for environmental applications such as remediation of polluted environments. The $TiO_2$ nanopowders doped with metal or non-metal elements have been synthesized by variety methods such as flame method, chemical vapor synthesis, sol-gel, ion implantation, which affect a doping behavior in different ways resulting in different surface characteristics, leading to different photocatalytic activity. In addition to an effect of synthesis methods, the photocatalytic activity of $TiO_2$ nanopowders can be improved by subsequent heat-treatments. In this study, to obtain a highly efficient photocatalyst, we synthesized $TiO_2$ nanopowders doped with tungsten by the chemical vapor synthesis method (CVS) and determined their physical properties and photocatalytic activity, together with subsequent post-treatment in the range of $300^{\circ}C$ to $700^{\circ}C$.

• Asian-Australasian Journal of Animal Sciences
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• v.25 no.1
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• pp.44-51
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• 2012

Calcium ions play an important role in the establishment and maintenance of pregnancy, but molecular and cellular regulatory mechanisms of calcium ion action in the uterine endometrium are not fully understood in pigs. Previously, we have shown that calcium regulatory molecules, transient receptor potential vanilloid type 5 (TRPV6) and calbindin-D9k (S100G), are expressed in the uterine endometrium during the estrous cycle and pregnancy in a pregnancy status- and stage-specific manner, and that estrogen of conceptus origin increases endometrial TRPV6 expression. However, regulation of S100G expression in the uterine endometrium and conceptus expression of S100G has been not determined during early pregnancy. Thus, we investigated regulation of S100G expression by estrogen and interleukin-$1{\beta}$ (IL1B) in the uterine endometrium and conceptus expression of S100G during early pregnancy in pigs. We obtained uterine endometrial tissues from day (D) 12 of the estrous cycle and treated with combinations of steroid hormones, estradiol-$17{\beta}$ ($E_2$) and progesterone ($P_4$), and increasing doses of IL1B. Real-time RT-PCR analysis showed that $E_2$ and IL1B increased S100G mRNA levels in the uterine endometrium, and conceptuses expressed S100G mRNA during early pregnancy, as determined by RT-PCR analysis. To determine if endometrial expression of S100G mRNA during the implantation period was affected by the somatic cell nuclear transfer (SCNT) procedure, we compared S100G mRNA levels in the uterine endometrium from gilts with SCNT-derived conceptuses with those from gilts with conceptuses derived from natural mating on D12 of pregnancy. Real-time RT-PCR analysis showed that levels of S100G mRNA in the uterine endometrium from gilts carrying SCNT-derived conceptuses was significantly lower than those from gilts carrying conceptuses derived from natural mating. These results showed that S100G expression in the uterine endometrium was regulated by estrogen and IL1B of conceptus origin, and affected by the SCNT procedure during early pregnancy. These suggest that conceptus signals regulate S100G, an intracellular calcium transport protein, for the establishment of pregnancy in pigs.

• Journal of the Korean Magnetics Society
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• v.14 no.4
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• pp.149-161
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• 2004

The fusion of nano technology and information technology is essential to sustain the present growth rate and to induce new industry in this ever-growing information age. Considering Korean industry whose competitiveness lies heavily on information related technologies, this field will be inevitable for future. Nano materials can be described as novel materials whose size of elemental structure has been engineered at the nanometer scale. Materials in the nanometer size range exhibit fundamentally new behavior, as their size falls below the critical length scale associated with any given property. " Bottom-up' techniques involve manipulating individual atoms and molecules. Bottom-up process usually implies controlled or directed self assembly of atoms and molecules into nano structures. It resembles more closely the processes of biology and chemistry, where atoms and molecules come together to create structures such as crystals or living cells. Nano scale sensors are included in the electronics area since the diverse sensing mechanisms are often housed on a semiconductor substrate and usually give rise to an electronic signal. The application of nano technology to the chemical sensors should allow improvements in functionality such as gas sensing. In this presentation, we will discuss about the nano scale information materials and devices fabricated by using the organic/inorganic nano templates.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.6
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• pp.34-42
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• 2002

In this paper, we propose a temperature independent the detective voltage source in voltage detector. The value of a detective voltage source is designed to become m times of silicon bandgap voltage at zero absolute temperature. By properly choosing the temperature coefficient of diode, the temperature coefficient of a concave voltage nonlinearities generated by the ${\Delta}V_{BE}$ section of diode between base and emitter of transistors with a different area can be summed with convex nonlinearities the $V_{BE}$ voltage to achieve the near zero temperature coefficient of the detective voltage source. We designed that the value of a detective voltage can be varied by ${\Delta}V_{BE}$, the $V_{BE}$multiplier circuit and resistor. In order to verify the performance of a proposed detective voltage source, we manufactured the voltage detector IC for 1.9V which is fabricated in $6{\mu}m$ Bipolar technology and measured the operating characteristics, the temperature coefficient of a detective voltage. To reduce the deviation of a detective voltage in the IC process step, we introduced a trimming technology, ion implantation and an isotropic etching. In manufactured IC, the detective voltage source could achieve the stable temperature coefficient of 29ppm/$^{\circ}C$ over the temperature range of -30$^{\circ}C$ to 70$^{\circ}C$. The current consumption of a voltage detector constituted by the proposed detective voltage source is $10{\mu}A$ from 1.9V-supply voltage at room temperature.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.14-22
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• 2010

The source/channel/drain regions are formed by ion implantation with different dopant types of $n^+/p^{(+)}/n^+$ in the fabrication of the conventional n-type metal-oxide-semiconductor field effect transistor(NMOSFET). In implementing the ultra-small devices with channel length of sub-30 nm, in order to achieve the designed effective channel length accurately, low thermal budget should be considered in the fabrication processes for minimizing the lateral diffusion of dopants although the implanted ions should be activated as completely as possible for higher on-current level. Junctionless (JL) MOSFETs fully capable of the the conventional NMOSFET operations without p-type channel for enlarging the process margin are under researches. In this paper, the optimum design of the JL MOSFET based on silicon nanowire (SNW) structure is carried out by 3-D device simulation and the basic radio frequency (RF) characteristics such as conductance, maximum oscillation frequency($f_{max}$), current gain cut-off frequency($f_T$) for the optimized device. The channel length was 30 run and the design variables were the channel doping concentration and SNW radius. For the optimally designed JL SNW NMOSFET, $f_T$ and $f_{max}$ high as 367.5 GHz and 602.5 GHz could be obtained, respectively, at the operating bias condition $V_{GS}$ = $V_{DS}$ = 1.0 V).