• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1305-1306
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• 2006

A monolayer assembly of anthracene-viologen linked thiol ($AMVC_{8}SH$) was fabricated on a gold electrode by self-assembly method. Structural property of the self-assembled monolayers (SAMs) was carried out by optical and electrochemical method. Firstly, we investigated PL spectrum and UV/visible absorption for the optical properties in solution state. Secondly, we determined the characteristics of charge transfer in different electrolyte solutions by electrochemical quartz crystal microbalance (EQCM). From the data, the PL spectrum and UV/visible absorption were observed and the well-defined shape peaks were nearly equal charges during redox reactions and existed to an excellent linear relationship between the scan rates and existed to currents. The mass change was determined during redox reaction. The mass change behavior of SAMs was not only governed by the mobility of the ion in the viologen but the valence of the ion in the electrolyte solution.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.8
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• pp.1376-1382
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• 2016

The discharge characteristics of inductively coupled $Ar/CH_4$ plasma were investigated by fluid simulation. The inductively coupled plasma source driven by 13.56 Mhz was prepared. Properties of $Ar/CH_4$ plasma source are investigated by fluid simulation including Navier-Stokes equations. The schematics diagram of inductively coupled plasma was designed as the two dimensional axial symmetry structure. Sixty six kinds of chemical reactions were used in plasma simulation. And the Lennard Jones parameter and the ion mobility for each ion were used in the calculations. Velocity magnitude, dynamic viscosity and kinetic viscosity were investigated by using the fluid equations. $Ar/CH_4$ plasma simulation results showed that the number of hydrocarbon radical is lowest at the vicinity of gas feeding line due to high flow velocity. When the input power density was supplied as $0.07W/cm^3$, CH radical density qualitatively follows the electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.94-97
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• 2017

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.

• Polymer(Korea)
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• v.25 no.6
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• pp.826-832
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• 2001

In this study, PPy/gold/mylar type electroactive bi-layer actuator was prepared by the electrochemical polymerization of pyrrole onto the gold/mylar film and the actuation characteristics were studied using bending beam method. Conducting polymer-based actuators undergo volumetric changes due to the movement of dopant ions into the film during the electrical oxidation process. The bilayer films exhibited different actuation characteristics depending on dopant ion size. It was observed that the relatively small dopant ion (i.e. toluene sulfonate) moved into the PPy film at oxidized state, so volume expanded to result in bending motion. In case of the film having large dopant ion (i.e. dodecylbenzenesulfonate), volume expansion was observed at reduced state. This is due to the incorporation of $Na^+$ counterion with water molecules, while the large dopant ion was fixed in the film due to the limited mobility during tile redox process.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.187-189
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• 2015

A charge-trap flash (CTF) thin film transistor (TFT) memory is proposed at a low-temperature process (≤ 450℃). The memory cell consists of a sputtered oxide-nitride-oxide (ONO) gate dielectric and Schottky barrier (SB) source/drain (S/D) junctions using nickel silicide. These components enable the ultra-low-temperature process to be successfully achieved with the ONO gate stacks that have a substrate temperature of room temperature and S/D junctions that have an annealing temperature of 200℃. The silicidation process was optimized by measuring the electrical characteristics of the Ni-silicided Schottky diodes. As a result, the Ion/Ioff current ratio is about 1.4×10⁵ and the subthreshold swing and field effect mobility are 0.42 V/dec and 14 cm²/V·s at a drain voltage of −1 V, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.51-58
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• 1993

N-channel TFTs fabricated on the pre-amorphized (by Si ion implantation) and recrystallized Si film having 10.1V threshold voltage, 20.7cm$^{2}$/V$\cdot$s field effect mobility and ~10$^{5}$/ ON/OFF ratio, whowed improved characteristics comparing to those obtained from the as-deposited (by LPCVD) poly Si film which had 11.2V, 9cm$^{2}$/V$\cdot$s and ~10$^{4}$ respectively.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.546-548
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• 1987

We have studied 1iquid phase regrowth of phosphorus ion implanted silicon films on insulator (SOI) by rapid thermal annealing (RTA) method. Many twin boundaries were observed on the regrown silicon layer and mobility of the layer was increased from $14\;cm^2/v.sec$ to $38\;cm^2/v.sec$ after annealing at $1150^{\circ}C$ for 15 sec.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.10
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• pp.1862-1868
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• 2010

A corona motor, as one of a powerful cooling means of microelectronic devices, has been employed because of its very simple structure of no coils and no brushes. In this paper, the effect of polarity of applied voltage and the number of blade corona electrodes on the fundamental properties of rotation of the motor was investigated. The I-V and rotation characteristics of the blade corona electrode were significantly different from the different polarities of applied voltages and the blade corona electrode numbers, due to the different space charge effect resulted by the different migration mobility of the positive and negative ions generated near the blade corona electrode tip of the rotor of the motor. The rotation speed of the motor was influenced significantly by the polarity of corona discharge, the number of blades, and mass of rotor. At the same corona current, an effective rotation can be obtained with the positive corona caused by the lower ion mobility. On the other hand, the higher rotation speed can be obtained with the negative corona resulted from its higher corona current. The highest rotation speed and energy efficiency can be obtained with the rotor having 4 blades.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.373-379
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• 2013

Mg-doped zinc tin oxide (ZTO:Mg) thin films were prepared on glasses by rf magnetron sputtering. $O_2$ was introduced into the chamber during the sputtering. The optical properties of the films as a function of oxygen flow rate were studied. The crystal structure, elementary properties, and depth profiles of the films were investigated by X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS), respectively. Bottom-gate transparent thin film transistors were fabricated on $N^+$ Si wafers, and the variation of mobility, threshold voltage etc. with the oxygen flow rate were observed.