• Title/Summary/Keyword: Ion beam exposure

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Improvement of Electrical Property and Stability of Silver Nanowire Transparent Electrode Via Ion-beam Treatment (이온빔 처리를 통한 은나노와이어 전극의 전기적 특성과 안정성 향상)

  • Jung, Sunghoon;Lee, Seunghun;Kim, Do-Geun
    • Journal of the Korean institute of surface engineering
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    • v.50 no.6
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    • pp.455-459
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    • 2017
  • The development of flexible transparent electrode has been paid attention for flexible electronics. In this study, we have developed transparent electrode based on silver nanowires with improved electrical property and stability through ion-beam treatment. The energetic particles of ion-beam could sinter junctions of each silver nanowires and etch out polyvinylpyrollidone(PVP) coated on silver nanowires. The sheet resistance of silver nanowire transparent electrode was reduced by 74%, and the resistance uniformity was increased about 3 times after exposure of ion beam. Moreover, the stability at $85^{\circ}C$ of temperature and 85% of relative humidity could be also improved.

Statistical Modeling of Pretilt Angle Control using Ion-beam Alignment on Nitrogen Doped Diamond-like Carbon Thin Film

  • Kang, Hee-Jin;Lee, Jung-Hwan;Han, Jung-Min;Yun, Il-Gu;Seo, Dae-Shik
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.6
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    • pp.297-300
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    • 2006
  • The response surface modeling of the pretilt angle control using ion-beam (IB) alignment on nitrogen doped diamond-like carbon (NDLC) thin film layer is investigated. This modeling is used to analyze the variation of the pretilt angle under various process conditions. IB exposure angle and IB exposure time are considered as input factors. The analysis of variance technique is settled to analyze the statistical significance, and effect plots are also investigated to examine the relationships between the process parameters and the response. The model can allow us to reliably predict the pretilt angle with respect to the varying process conditions.

Evolution the surface morphology and mechanical properties of Polyimide induced by Ion Beam Irradiation

  • Ahmed, Sk. Faruque;Nho, Gun-Ho;Moon, Myoung-Woon;Han, Jun-Hyun;Lee, Kwang-Ryeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.98-98
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    • 2010
  • Ion beam irradiation has been extensively used for surface modification of polymers, glassy metals and amorphous and crystalline materials at micron and submicron scales. The surface structures created by exposure to an ion beam range from dots, steps and one-dimensional straight wrinkles to highly complex hierarchical undulations and ripples. In general, the morphology of these nanoscale features can be selected by controlling the ion beam parameters (e.g. fluence and acceleration voltage), making ion beam irradiation a promising method for the surface engineering of materials. In the work, we presented that ion beam irradiation results in creation of a peculiar nanoscale dimple-like structure on the surface of polyimide - a common polymer in electronics, large scale structures, automobile industry, and biomedical applications. The role of broad Ar ion beam on the morphology of the structural features was investigated and insights into the mechanisms of formation of these nanoscale features were provided. Moreover, a systematic experimental study was performed to quantify the role of ion beam treatment time, and thus the morphology, on the coefficient of friction of polyimide surfaces covered by nanostructure using a tribo-experiment. Nano-indentation experiment were performed on the ion beam treated surfaces which shows that the hardness as well as the elastic modulus of the polyimide surface increased with increase of Ar ion beam treatment time. The increased of hardness of polyimide have been explained in terms of surface structure as well as morphology changes induced by Ar ion beam treatment.

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Monte-Carlo Simulation of Focused ton Beam Lithography (집속 이온빔 리소그라피의 몬데칼로 전산 모사)

  • 이현용;정홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.134-136
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    • 1993
  • Microelectronic fabrication technology .is based on the use of lithsgraphy to create small linewidths and patterns that make up ULSI. In previous papers, we discussed the theoretically calculated values such as ion range, ion concentration,ion transmission coefficient and the defocused ion beam-induced characteristics in a-Se$_{75}$Ge$_{25}$. In this paper, the typical Monte Carlo (MC) simulation results and p개cedures for the focused ion beam lithography were presented. The interaction and scattering of ions with the resist depend on the beam energy, impact parameter arid resist parameters. For ion exposure simulations, the quantity of interest is the spatial distribution of energy deposited by ions in the resist due to interaction phenomena with resist ions.s.s.

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Inorganic Thin film for Horizontal Aligned Liquid Crystal with Non-rubbing Technologies (무기막에서의 수형배향된 액정의 특성에 대한 연구)

  • Choi, Daesub;Shin, Hochul
    • Journal of Satellite, Information and Communications
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    • v.10 no.2
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    • pp.75-79
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    • 2015
  • In this study, we investigated the electro-optical (EO) characteristic of fringe-field switching (FFS) mode cell by the ion beam alignment method on the a-C:H thin film. The suitable inorganic thin films for FFS cell and the aligning capabilities of nematic liquid crystal (NLC) using the new alignment material of a-C:H thin film were studied. An excellent voltage-transmittance (V-T) and response time curve of the ion beam aligned FFS-LCD was observed with oblique ion beam exposure on the a-C:H thin films. Also, the V-T hysteresis characteristics of the ion beam-aligned FFS-LCD with IB exposure on the a-C:H thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide surface.

Liquid Crystal Alignment on the SiC Thin Film by the Ion Beam Exposure Method

  • Park, Chang-Joon;Hwang, Jeoung-Yeon;Kang, Hyung-Ku;Kim, Young-Hwan;Seo, Dae-Shik;Ahn, Han-Jin;Kim, Kyung-Chan;Kim, Jong-Bok;Baik, Hong-Koo
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.1
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    • pp.22-24
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    • 2005
  • We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about $87{\circ}$ of stable pretilt angle was achieved at the range from $30{\circ}$ to $45{\circ}$ of incident angle. The good LC alignment is maintained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to $300{\circ}C$.

Liquid Crystal Alignment on the SiC Thin Film by the Ion Beam Exposure Method (SiC 박막에 이온빔 배향을 이용한 틸트 발생에 관한 연구)

  • Kang, Hyung-Ku;Kang, Hee-Jin;Hwang, Jeoung-Yeon;Lee, Whee-Won;Bae, Yu-Han;Moon, Hyun-Chan;Kim, Young-Hwan;Seo, Dae-Shik;Lim, Sung-Hoon;Jang, Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.489-490
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    • 2005
  • We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}$ to $45^{\circ}$ of incident angle. The good LC alignment is main-tained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to 300.

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The optical characteristics of amorphous $Se_{75}Ge_{25}$ thin film by the low-energy lon beam exposure (저 에너지 이온빔 조사에 따른 비정질 $Se_{75}Ge_{25}$ 박막의 광학적 특성)

  • 이현용;오연한;정홍배
    • Electrical & Electronic Materials
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    • v.7 no.2
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    • pp.100-106
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    • 1994
  • A bilayer film consisting of a layer of a-Se$_{75}$ Ge$_{25}$ with a surface layer of silver -100[.angs.] thick and a monolayer film of a-Se$_{75}$ Ge$_{25}$ are irradiated with 9[keV] Ga$^{+}$ ion beam. The Ga$^{+}$ ion (10$^{16}$ [ions/cm$^{2}$] exposed a-Se$_{75}$ Ge$_{25}$ and Ag/a-Se$_{75}$ Ge$_{25}$ thin films show an increase in optical absorption, and the absorption edge on irradiation with shifts toward longer wavelength. The shift toward longer wavelength called a "darkening effect" is observed also in film exposure to optical radiation(4.5*10$^{20}$ [photons/cm$^{2}$]). The 0.3[eV] edge shift for ion irradiation films is about twice to that obtained on irradiation with photons. These large changes are primarily due to structural changes, which lead to high etch selectivity and high sensitivity.

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Strain Improvement Based on Ion Beam-Induced Mutagenesis (이온빔을 이용한 미생물의 균주 개량)

  • Jeong, Hae-Young;Kim, Kye-Ryung
    • Microbiology and Biotechnology Letters
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    • v.38 no.3
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    • pp.235-243
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    • 2010
  • For decades, traditional mutation breeding technologies using spontaneous mutation, chemicals, or conventional radiation sources have contributed greatly to the improvement of crops and microorganisms of agricultural and industrial importance. However, new mutagens that can generate more diverse mutation spectra with minimal damage to the original organism are always in need. In this regard, ion beam irradiation, including proton-, helium-, and heavier-charged particle irradiation, is considered to be superior to traditional radiation mutagenesis. In particular, it has been suggested that ion beams predominantly produce strand breaks that often lead to mutations, which is not a situation frequently observed in mutagenesis induced by gamma-ray exposure. In this review, we briefly describe the general principles and history of particle accelerators, and then introduce their successful application in ion beam technology for the improvement of crops and microbes. In particular, a 100-MeV proton beam accelerator currently under construction by the Proton Engineering Frontier Project (PEFP) is discussed. The PEFP accelerator will hopefully prompt the utilization of ion beam technology for strain improvement, as well as for use in nuclear physics, medical science, biology, space technology, radiation technology and basic sciences.

Study of Liquid Crystal Alignment and Polarization-dependence on organic surface with slanted ion beam irradiation (유기절연막으로의 경사진 이온빔조사가 유기막 표면에서의 편광발생과 액정배향에 미치는 영향에 관한 연구)

  • Han, Jeong-Min;Choi, Dae-Sub;Hwang, Jong-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03b
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    • pp.15-16
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    • 2010
  • We used Brewster's Law to examine the mechanism of liquid crystal (LC) alignment on an organic insulation layer when subjected to ion-beam irradiation. Brewster's Law implies that the maximum rate polarized rayon a slanted insulation layers on the substrate and it illustrates the dependence of polarization and themechanical structure on the ion beam irradiation process. The pretilt angle of nematic LCs on the organic insulation surface was about $1.13^{\circ}$ for an ion beam exposure of $45^{\circ}$ for 1 minute at 1800eV. This shows the dependence of LC alignment on the polarization ratio in a slanted organic insulation layer. We also discussed the electro-optical characteristic of twisted nematic (TN) LCD using ion beam irradiation on organic overcoat layer.

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