• Proceedings of the Korean Radioactive Waste Society Conference
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• 2011.05a
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• pp.307-308
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• 2011

• Membrane Journal
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• v.24 no.6
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• pp.448-452
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• 2014

Nanocomposite membrane to show facilitated olefin transport was prepared for enhanced separation performance. Addtion of halogen molecules into PVP/AgNPs/ TCNQ nanocomposite membrane was expected to further polarize the surface of AgNPs for enhancing the separation performance. The formation of AgNPs and presence of iodine was confirmed by TEM and EDS analysis, respectively. The separation performance for propylene/propane mixture was compared with that of PVP/AgNPs/TCNQ nanocomposite membrane. The long-term stability of membrane was investigated with time.

• Nuclear Engineering and Technology
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• v.52 no.8
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• pp.1638-1649
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• 2020

In the case of a severe accident in a Light Water Reactor, the issue of late release of fission products, from the primary circuit surfaces is of particular concern due to the direct impact on the source term. CsI is the main iodine compound present in the primary circuit and can be deposited as particles or condensed species. Its chemistry can be affected by the presence of molybdenum, and can lead to the formation of gaseous iodine. The present work studied chemical reactions on the surfaces involving gaseous iodine release. CsI and MoO₃ were used to highlight the effects of carrier gas composition and oxygen partial pressure on the reactions. The results revealed a noticeable effect of the presence of molybdenum on the formation of gaseous iodine, mainly identified as molecular iodine. In addition, the oxygen partial pressure prevailing in the studied conditions was an influential parameter in the reaction.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.2
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• pp.68-72
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• 2002

The $\beta$-$FeSi_2$ and $\alpha$-$FeSi_2$ single crystals were synthesized by chemical vapour transport (CVT) using iodine as a transporting agent from the commercially available $FeSi_2$ powder. The $FeSi_2$ powder together with iodine were sealed in an evacuated quartz ampoule and the ampoule then being placed in two-zone electrical furnace for growing crystal. The CVT of $FeSi_2$ with iodine yielded $\beta$-$FeSi_2$ and $\alpha$-FeSi$_2$ single crystals at deposition temperature of 750 and $950^{\circ}C$ respectively. The source temperature was $1050^{\circ}C$ in both cases. The crystals of the $\alpha$-FeSi$_2$ phase were typically plate shaped with dimensions of about $10\times 10 \textrm{mm}^2$, whereas the crystals of orthorhombic $\beta$-$FeSi_2$ phase grew predominantly in the fonts of thin needle of about 10 mm in length. The composition of$\alpha$-FeSicrystal determined by electron probe microanalysis (EPMA) resulted in Si-rich $FeSi_{2.58}$ . 57. Furthermore, the CVT $\beta$-$FeSi_2$ crystal was found to be transformed to the high temperature $\alpha$-$FeSi_2$phase above $930^{\circ}C$.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1997.10a
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• pp.211-216
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• 1997

The tungsten disulfide (WS$_2$) solid lubricant was synthesized by two different reaction processes, and the chemical and physical characteristics of synthesized WS$_2$ powder were analyzed in terms of the average particle size, morphology, crystalline phase. The solid WO$_3$ powder with the average size of 0.2 $\mu$m was reacted with CS$_2$ gas flowed with N$_2$ or 96% N$_2$ + 4% H$_2$ forming gas for 36 h and 24 h at 900$\circ$C respectively. In the case of vapour phase transport method, the 3.5 wt% iodine was added as a vapour transport reagent into the composition of tungsten and sulfur powders maintaining a constant molar ratio of W : S = 1 : 2.2. The mixture was then heat treated at 850$\circ$C for 2 weeks in vacuum The reaction product obtained showed the average size of 12 $\mu$m and the hexagonal plate shape of typical solid lubricant with 2H-WS$_2$ crystalline phase.

• Tribology and Lubricants
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• v.13 no.4
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• pp.60-65
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• 1997

The tungsten disulfide $(WS_2)$ solid lubricant was synthesized by two different reaction processes, i.e., the reaction between $CS_2$ gas phase and solid $WO_3$powder, and the vapour phase transport method of tungsten and sulfur in a high vacuum. The chemical and physical characteristics of synthesized $WS_2$powder were analyzed in terms of the average particle size, morphology, crystalline phase etc. in comparison with those of commercial $WS_2$powder. The solid $WO_3$ powder with the average size of 0.2 ${\mu}{\textrm}{m}$ was reacted with $CS_2$gas flowed with$N_2$or 96%$N_2{\times}4%H_2$forming gas for 36 h and 24 h at 90$0^{\circ}C$ respectively. $WS_2$ crystalline phase was then formed through the intermediate phase of .$W_{20}O_{58}$ In the case of vapour phase transport method, the 3.5 wt% iodine was added as a vapour transport reagent into the composition of tungsten and sulfur powders maintaining a constant molar ratio of W:S=1:2.2. The mixture was then heat treated at 85$0^{\circ}C$ for 2 weeks in vacuum. The reaction product obtained showed the average size of 12 ${\mu}{\textrm}{m}$ and the hexagonal plate shape of typical solid lubricant with 2H-$WS_2$crystalline phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.272-279
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• 2003

In this work Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystals were grown by the chemical transport reaction method in which the iodine was used as the transporting agent. The Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystal was found to have a monoclinic structure. The optical absorption spectra of grown crystals were investigated using a temperature-controlled UV-VIS -NIR spectrophotometer. The temperature dependence of band-edge absorption was in a good agreement with the Varshni equation. The observed impurity absorption peaks could be explained as arising from the electron transition between energy levels of Co$^{2+}$ ion sited at the T$_{d}$ symmetry point.

• Nuclear Engineering and Technology
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• v.48 no.5
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• pp.1273-1279
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• 2016

Production of iodine-131 by neutron activation of tellurium in tellurium dioxide ($TeO_2$) material requires a target that meets the safety requirements. In a radiopharmaceutical production unit, a new lid for a can was designed, which permits tight sealing of the target by using tungsten inert gaswelding. The leakage rate of all prepared targets was assessed using a helium mass spectrometer. The accepted leakage rate is ${\leq}10^{-4}mbr.L/s$, according to the approved safety report related to iodine-131 production in the TRIGA Mark II research reactor (TRIGA: Training, Research, Isotopes, General Atomics). To confirm the resistance of the new design to the irradiation conditions in the TRIGA Mark II research reactor's central thimble, a study of heat effect on the sealed targets for 7 hours in an oven was conducted and the leakage rates were evaluated. The results show that the tightness of the targets is ensured up to $600^{\circ}C$ with the appearance of deformations on lids beyond $450^{\circ}C$. The study of heat transfer through the target was conducted by adopting a one-dimensional approximation, under consideration of the three transfer modes-convection, conduction, and radiation. The quantities of heat generated by gamma and neutron heating were calculated by a validated computational model for the neutronic simulation of the TRIGA Mark II research reactor using the Monte Carlo N-Particle transport code. Using the heat transfer equations according to the three modes of heat transfer, the thermal study of I-131 production by irradiation of the target in the central thimble showed that the temperatures of materials do not exceed the corresponding melting points. To validate this new design, several targets have been irradiated in the central thimble according to a preplanned irradiation program, going from4 hours of irradiation at a power level of 0.5MWup to 35 hours (7 h/d for 5 days a week) at 1.5MW. The results showthat the irradiated targets are tight because no iodine-131 was released in the atmosphere of the reactor building and in the reactor cooling water of the primary circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.230-233
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.234-237
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility,carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.