• Title/Summary/Keyword: Intermediate band

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Studies on the Physiological Chemistry of the Spring Habits in Naked Barley IV. Electrophoretic Variations in Seed Proteins during Ripening (과맥의 파성에 대한 생리화학적 연구 제4보 등숙과정에 있어서의 종자단백질의 전기영동특성 변이)

  • 최선영;이강수
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.27 no.1
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    • pp.55-59
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    • 1982
  • With naked barley varieties which are different in their spring habits, variations in seed proteins during ripening were checked by acrylamide gel electrophoresis. In case of 7% acrylamide gel among protein bands ⅰ-band was observed only in both Sedohadaka (intermediate type) and Wanju (spring type) throughout the ripening period, and j-band was detected in all the three varieties until 33 days after heading, but not in Nonsangwa (winter type) thereafter. In case of 6M urea-7% acrylamide gel z-band was traced only in Nonsangwa, contrary to i-band, throughout the ripening period. U-band was observed in all the three varieties until 23 days after heading, but not in Nonsangwa thereafter. X-band showed opposite from u-band. Throughout the ripening period Sedohadaka was significantly more similar in the electrophoretic patterns to Wanju than to Nonsangwa.

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Design and Implementation of W-CDMA Transmitter for 2 GHZ Band (2 GHz대 W-CDMA 송신기의 설계 및 제작)

  • 이승대;백주기;이병선;방성일;진년강
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.10 no.3
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    • pp.368-377
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    • 1999
  • In this paper, the wide-band CDMA transmitter for 2 GHz band is designed and implemented. The CC-OQPSK implemented as ASIC has better spectral and power efficiency than the conventional QPSK system because it has constant envelope characteristics. Good harmonics rejection characteristics and gain of 20 dB are shown on the intermediate frequency stage using double-conversion scheme. The output power of two-stage RF amplifier is +2l.14 dBm in 1.9 GHz band. It is confirmed that the electrical characteristics of the transmitter satisfy with required the specification of the wide-band CDMA transmitter for 2 GHz band.

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Binary Black Hole Inspirals and GW detection in 0.1-10 Hz

  • Bae, Yeong-Bok;Ahn, Sang-Hyeon;Kang, Gungwon;Kim, Chunglee;Kim, Whansun;Oh, John J.;Oh, Sang Hoon;Park, Chan;Son, Edwin J.;Lee, Yong Ho
    • The Bulletin of The Korean Astronomical Society
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    • v.42 no.2
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    • pp.53.3-53.3
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    • 2017
  • The pilot study of SLGT (Superconducting Low-frequency Gravitational-wave Telescope) is being performed by KKN (KASI-KISTI-NIMS) collaboration. In this presentation, we discuss prospectives of detecting GWs in the low-frequency band (0.1-10 Hz), which is a target frequency band of SLGT, but can be hardly observed by advanced LIGO. IMBHBs (Intermediate Mass Black Hole Binaries) and IMRIs (Intermediate Mass Ratio Inspirals) with total masses of O(1000) up to O(10,000) solar masses are most probable sources between 0.1-10 Hz. We estimate horizon distances and signal to noise ratios of IMBHBs and IMRIs for different SLGT design sensitivities. Based on our calculations, detection rates for IMBHBs and IMRIs with SLGT will be discussed.

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Implementation of Ku-band Low Noise Block for Global Multi-Band Digital Satellite Broadcasting (글로벌형 다중대역 디지털 위성방송용 Ku-대역 LNB 개발)

  • Kim, Sun Hyo;Rhee, Young-Chul
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.1
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    • pp.23-28
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    • 2016
  • In this paper, a Multi-Band Ku-band down converter was designed for reception of multi-band digital satellite broadcasting. The Multi-band low-nose down converter was designed to form four local oscillator frequencies (9.75, 10, 10.75 and 11.3GHz) representing a low phase noise due to VCO-PLL with respect to input signals of 10.7 to 12.75GHz and 3-stage low noise amplifier circuit by broadband noise matching, and to select an one band of intermediate frequency (IF) channels by digital control. The developed low-noise downconverter exhibited the full conversion gain of 64dB, and the noise figure of low-noise amplifier was 0.7dB, the P1dB of output signal 15dBm, and the phase noise -73dBc@100Hz at the band 1 carrier frequency of 9.75GHz. The low noise block downconverter (LNB) for receiving four-band digital satellite broadcasting designed in this paper can be used for satellite broadcasting of vessels navigating international waters.

The Design and Implementation of TV Tuner for the Digital Terrestrial Broadcasting (지상파 디지털 방송용 TV 튜너 설계 및 구현)

  • 정영준;김재영;최재익;박재홍
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.2
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    • pp.302-312
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    • 2000
  • Digital TV tuner for 8-VSB modulation was developed with satisfying the requirements of ATSC. Double frequency conversion and active tracking filter was used in order to suppress IF beat and image band, which results in reducing the interference between adjacent channels and multi-channels. The implemented digital TV tuner has excellent performance such as the wide dynamic range, good flatness in passing band, and low phase noise. The developed tuner is available to handle the digital and analogue television signal at the same time.

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A D-Band Balanced Subharmonically-Pumped Resistive Mixer Based on 100-nm mHEMT Technology

  • Campos-Roca, Y.;Tessmann, A.;Massler, H.;Leuther, A.
    • ETRI Journal
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    • v.33 no.5
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    • pp.818-821
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    • 2011
  • A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

Intermediate band solar cells with ZnTe:Cr thin films grown on p-Si substrate by pulsed laser deposition

  • Lee, Kyoung Su;Oh, Gyujin;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.247.1-247.1
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    • 2016
  • Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

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Implementation of Down Converter for Ku-Band Application (Ku 대역용 주파수변환기의 구현)

  • 정동근;김상태;하천수
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.4 no.3
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    • pp.527-536
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    • 2000
  • This paper discusses the design of self-oscillating mixer type low noise down converter using the microwave field effect transistor. The mixer is consists of local oscillator in which high stability dielectric resonator and band pass filter to get rid of spurious oscillation at intermediate frequency stage. The microstrip antenna was integrated in the same substrate which generate 12.3GHz and low noise amplifier was also added after antenna using 3 stage of high electron mobility transistors. The output frequency from the local oscillator was chosen as 11.3GHz for the Ku-band application. The measured phase noise was -804dBc/Hz at 100kHz offset frequency, and the gain was 7~12dB in frequency range from 12.0GHz to 12.7GHz. The noise figure at intermediate frequency stage was 64H. The designed model shows less conversion loss than previous diode type mixer. The proposed mixer can be used in digital satellite broadcasting and communication system and expected to use in next generation low noise block design.

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A Low-power High-resolution Band-pass Sigma-delta ADC for Accelerometer Applications

  • Cao, Tianlin;Han, Yan;Zhang, Shifeng;Cheung, Ray C.C.;Chen, Yaya
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.3
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    • pp.438-445
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    • 2017
  • This paper presents a low-power high-resolution band-pass ${\Sigma}{\Delta}$ ADC for accelerometer applications. The proposed band-pass ${\Sigma}{\Delta}$ ADC consists of a high-performance 6-th order feed-forward ${\Sigma}{\Delta}$ modulator with 1-bit quantization and a low-power, area-efficient digital filter. The ADC is fabricated in 180 nm 1P6M mixed-signal CMOS process with a die area of $5mm^2$. This high-resolution ADC got 90 dB peak signal to noise plus distortion ratio (SNDR) and 96 dB dynamic range (DR) over 4 kHz bandwidth, while the intermediate frequency (IF) is shifting from 100 KHz to 200 KHz. The power dissipation of the chip is 5.6 mW under 1.8 V (digital)/3.3 V (analog) power supply.

Study of the Effects of ZnO Intermediate Layer on Photoluminescence Properties of Magnetron Sputtering Grown GaN Thin Films (ZnO Intermediate Layer가 GaN 박막의 PL 특성에 미치는 영향 연구)

  • 성웅제;이용일;박천일;최우범;성만영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.574-577
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    • 2001
  • GaN thin films on sapphire were grown by rf magnetron sputtering with ZnO buffer layer. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The improved film quality has been obtained by using thin ZnO buffer layer. Using Auger electron spectroscopy(AES), it was observed that the annealing process improved the GaN film quality. The surface roughness according to the annealing temperatures(700, 900, 1100$^{\circ}C$) were investigated by AFM(atomic force microscopy) and it was confirmed that the crystallization was improved by increasing the annealing temperature. Photoluminescence at 8K shows a near-band-edge peak at 3.2eV with no deep level emission.

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