• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.106-106
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• 1995

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.20-23
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• 2011

Amorphous Ti-(50-x)Ni-xCu (at%) (x = 20, 25, 27, 30) alloy ribbons were prepared by melt spinning. Subsequently, the crystallization behavior of the alloy ribbons was investigated by X-ray diffraction and differential scanning calorimetry. ${\Delta}T$ (the temperature gap between $T_g$ and $T_x$) increased from 33 K to 47 K and the wavenumber ($Q_p$) decreased from 29.44 $nm^{-1}$ to 29.29 $nm^{-1}$ with increasing Cu content from 20 at% to 30 at%. The activation energy for crystallization decreased from 188.5 kJ/mol to 170.6 kJ/mol with increasing Cu content from 20 at% to 25 at%; afterwards, the activation energy remained near constant. Crystallization occurred in two-stage: amorphous-B2-$TiCu_2$ in Ti-Ni-Cu alloys with Cu content less than 25 at%, while it occurred in three-stage; amorphous-B2-TiCu-$TiCu_2$ in Ti-Ni-Cu alloys with Cu content more than 27 at%.

• Korean Journal of Metals and Materials
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• v.48 no.5
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• pp.417-423
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• 2010

A dense nanostructured MoSi$_{2}$-SiC composite was synthesized by a pulsed current activated combustion synthesis method within 2 min of one step from mechanically activated powders of Mo$_{2}$C and Si. Simultaneous combustion synthesis and consolidation were accomplished under the combined effects of a pulsed current and mechanical pressure. Highly dense MoSi$_{2}$-SiC with a relative density of up to 98% was produced under simultaneous application of an 80 MPa pressure and pulsed current. The average grain size and mechanical properties of the composite were investigated.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.180-186
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• 2011

Isothermal annealing and electromigration tests were performed at $125^{\circ}C$ and $125^{\circ}C$, $3.6{\times}10_4A/cm^2$ conditions, respectively, in order to compare the growth kinetics of the intermetallic compound (IMC) in the Cu/thin Sn/Cu bump. $Cu_6Sn_5$ and $Cu_3Sn$ formed at the Cu/thin Sn/Cu interfaces where most of the Sn phase transformed into the $Cu_6Sn_5$ phase. Only a few regions of Sn were not consumed and trapped between the transformed regions. The limited supply of Sn atoms and the continued proliferation of Cu atoms enhanced the formation of the $Cu_3Sn$ phase at the Cu pillar/$Cu_6Sn_5$ interface. The IMC thickness increased linearly with the square root of annealing time, and increased linearly with the current stressing time, which means that the current stressing accelerated the interfacial reaction. Abrupt changes in the IMC growth velocities at a specific testing time were closely related to the phase transition from $Cu_6Sn_5$ to $Cu_3Sn$ phases after complete consumption of the remaining Sn phase due to the limited amount of the Sn phase in the Cu/thin Sn/Cu bump, which implies that the relative thickness ratios of Cu and Sn significantly affect Cu-Sn IMC growth kinetics.