• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.59-59
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• 1999

DLC(diamond-like carbon)필름은 다이아몬드와 유사한 강도, 낮은 마차계수, 높은 Optical band gap, NEA(negative electron affinity)등의 우수한 특성을 가지고 있어, 내마모 코팅이나 정보저장 매체의 윤활 코팅, FED(field emission display)의 전계방출소자등 다양한 분야에의 응용이 연구되고 있다. DLC 필름은 PECVD(plasma enhanced chemical vapor deposition), IBAD(ion beam assisted deposition), Laser ablation, Cathodic vacuum arc등의 process를 이용하여 증착되고 있다. 특히 이러한 필름의 물성은 입사되는 이온의 에너지에 의해 좌우되는데, Lifshitz 등의 연구에 의하여 hyperthermal species를 이용한 DLC 필름의 성장은 초기에 subsurface로의 shallow implantation이 일어난 후 높은 sp3 fraction을 갖는 필름이 연속적으로 성장한다는 subplantation model이 제시 되었다. 본 연구에서는 기판과 subplantation 영역이 이후 계속하여 증착되는 순수 DLC 필름의 특성 변호에 미치는 영향에 대하여 관심을 가지고 실험을 행하였다. 본 실험에서는 상기 제시되어 있는 방법보다도 더욱 정확하고도 독립적으로 탄소 음이온의 에너지와 flux를 조절할 수 있는 Cs+ ion beam sputtering system을 이용하여 탄소 음이온의 에너지를 40eV에서 200eV까지 변화시키며 필름을 증착하였다. Si(100) 웨이퍼를 기판으로 사용하였고 증착 압력은 5$\times$10-7torr 였으며 인위적인 기판의 가열은 하지 않았다. 또한 Ion beam deposited DLC film의 growth process를 연구하기 위하여 200eV의 탄소 음이온을 시간(증착두께)을 변수로 하여 증착하였고, 이 때에는 Kaufman type의 gas ion beam을 이용하여 500eV의 Ar+ ion으로 pre-sputering을 행하였다. 탄소 음이온의 에너지와 증착두께에 따라 증착된 film 내의 sp3/sp2 ratio 의 변화를 XPS plasmon loss 와 Raman spectra를 이용하여 분석하였다. 또한 증착두께에 따른 interlayer의 결합상태를 관찰하기 위하여 AES와 XPS 분석을 보조로 행하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}Sr_{0.4}TiO_{3}(BST)$ films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}Sr_{x}TiO_{3}$ (x = 0.1 - 0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}Sr_{0.3}TiO_{3}$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.

• Journal of the Korean institute of surface engineering
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• v.32 no.6
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• pp.709-716
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• 1999

Ceramic is select for an alternative substrate material for high-speed circuits due to its low-thermal expansion. As, in this study, ceramic was prepared by ISG (interlayer sol-gel) process using metal salts and a metal alkoxide as the starting materials. Generally ceramic substrate is used electroless copper plating for the metallization. But it has been indicate weakely the adhesion strength between the substrate and copper layer. Therefore, this research, using the ISG process on the preparation of homogeneous and possible preparation at law temperature fabricated sol solution. Using of the dip coating method was coated for the purpose of giving the anchoring effect on the coating layer and enhancing the adhesion strength between the $Al_2$O$_3$ substrate and copper layer. This study examined primary the characteristic of the sol making condition and differential thermal analysis (DTA) X-ray diffraction (XRD) were mearsured to identify the crystal phase of heat treatment specimens. The morphology of the coated films were studied by scanning electron microscopy(SEM). As a resurt, XRD analysis was obtained patterns of $\alpha$-cordierite after heat-treatment about 2 hours at $1000^{\circ}C$. SEM analysis could have seen a large number of voids on coated film. The more contants of$ Al_2$$O_3$ Wt% was increased the more voids was advanced. Peel adhesion strength has a maximum in the contants of the TEOS:ANE of 1:0.7 mole%. In this case, adhesion strength has been measured 1150gf, peel adhesion strength were about 10 times more than uncoated of the ceramics film.

• Macromolecular Research
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• v.14 no.1
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• pp.38-44
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• 2006

Vacuum deposited copper phthalocyanine (CuPc) was placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in a multi-layered, organic, light-emitting diode (OLEOs). The well-stacked CuPc layer increased the stability and efficiency of the devices. Thermal annealing after CuPc deposition and magnetic field treatment during CuPc deposition were performed to obtain a stacked-CuPc layer; the former increased the stacking density of the CuPc molecules and the alignment of the CuPc film. Thermal annealing at about 100$^{circ}C$ increased the current flow through the CuPc layer by over 25$\%$. Surface roughness decreased from 4.12 to 3.65 nm and spikes were lowered at the film surface as well. However, magnetic field treatment during deposition was less effective than thermal treatment. Eventually, a higher luminescence at a given voltage was obtained when a thermally-annealed CuPc layer was placed in the present, multi-layered, ITO/CuPc/NPD/Alq3/LiF/AI devices. Thermal annealing at about 100$^{circ}C$ for 3 h produced the most efficient, multi-layered EL devices in the present study.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.48-48
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• 2002

It is generally accepted that ultra low dielectric interlayer dielectric materials (k < 2.2) will be necessary for ULSI advanced microelectronic devices after 2003, according to the International Technology Roadmap for Semiconductors (ITRS) 2000. A continuous reduction of dielectric constant is believed to be possible only by incorporating nanopores filled with air (k = 1.0) into electrically insulating matrices such as poly(methyl silsesquioxane) (PMSSQ). The nanopo.ous low dielectric films should have excellent material properties to survive severe mechanical stress conditions imposed during the advanced semiconductor processes such as chemical mechanical planarization process and multilayer fabrication. When air is incorporated into the films for lowering k, their mechanical strength has inevitably to be sacrificed. To minimize this effect, the nanopores are controlled to exist in the film as closed cells. The micromechanical properties of the nanoporous thin films are considered more seriously than ever, particularly for ultra low dielectric applications. In this study, three approaches were made to design and develop nanoporous low dielectric films with improved micromechanical properties: 1) wall density increase of nanoporous organosilicate film by copolymerization of carbon bridged comonomers; 2) incorporation of sacrificial phases with good miscibility; 3) selective surface modification by plasma treatment. Nanoporous low-k films were prepared with copolymerized PMSSQ and star-shaped sacrificial organic molecules, both of which were synthesized to control molecular weight and functionality. The nanoporous structures of the films were observed using field emission scanning electron microscopy, cross-sectional transmission electron microscopy, atomic force microscopy, and positronium annihilation lifetime spectroscopy(PALS). Micromechanical characterization was performed using a nanoindentor to measure hardness and modulus of the films.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1200-1203
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• 2009

A solution processed polymer tandem cell has been fabricated by using the organic layer coated crystalline $TiO_2$ nanoparticle inter layer. The highly dispersive OL-$TiO_2$ has several advantages in terms of excellent film forming property, crystallinity, optical transparency, and well defined chemical composition. The surface morphology of the $TiO_2$ thin film was found to play a crucial role in the performance of the polymer tandem cell. The stability of the tandem cell, utilizing dense $TiO_2$ nanoparticles inter layer, was superior to the stability of the single junction cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.73-76
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• 2001

We deposited epitaxial $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) films having thickness of 400 nm on MgO(001) substrates, where a 10 nm thick $Ba_{1-x}$S $r_{x}$Ti $O_3$(x=0.1-0.7) interlayer was inserted between BST and MgO to manipulate the stress of the BST films. Since the main difference of those epitaxial BST films was the lattice constant of the interlayers, we were very successful in controlling the stress of the BST films. BST films under small tensile stress showed larger dielectric constant than that without stress as well as those under compressive stress. Stress relaxation was investigated using epitaxial BST films with various thicknesses grown on different interlayers. For BST films grown on $Ba_{0.7}$S $r_{0.3}$Ti $O_3$ interlayers, the critical thickness was about 600 nm. On the other hand, the critical thickness of single-layer BST film was less than 100 nm.00 nm.m.m.m.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.393-397
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• 2002

Polyimide (PI) films have been studied widely as the interlayer dielectric materials due to a low dielectric constant, low water absorption, high gap-fill and planarization capability. The polyimide film was etched using inductively coupled plasma system. The etcying characteristics such as etch rate and selectivity were evaluated at different $CF_4/(CF_4+O_2)$chemistry. The maximum etch rate was 8300 ${\AA}/min$ and the selectivity of polyimide to SiO$_2$was 5.9 at $CF_4/(CF_4+O_2)$ of 0.2. Etch profile of polyimide film with an aluminum pattern was measured by a scanning electron microscopy. The vertical profile was approximately $90^{\circ}$ at $CF_4/(CF_4+O_2)$ of 0.2. As 20% $CF_4$ were added into $O_2$ plasma from the results of the optical emission spectroscopy, the radical densities of fluorine and oxygen increased with increasing $CF_4$ concentration in $CF_4/O_2$ from 0 to 20%, resulting in the increased etch rate. The surface reaction of etched PI films was investigated using x-ray photoelectron spectroscopy.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2018.11a
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• pp.379-379
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• 2018

MXenes are a new family of 2D transition metal carbide nanosheets analogous to graphene (Lv et al., 2017; Sun et al., 2018). Due to the easy availability, hydrophilic behavior, and tunable chemistry of MXenes, their use in applications for environmental pollution remediation such as heavy metal adsorption has recently been explored (Li et al., 2017). In this study, three-dimensional (3D) MXene ($Ti_3C_2T_x$) films with high adsorption capacity, good mechanical strength, and high selectivity for specific radionuclide from aquose solution were successfully fabricated by a polymeric precursor method using vacuum-assisted filtration. The highest removal efficiency on the films was 99.54%, 95.61%, and 82.79% for $Sr^{2+}$, $Co^{2+}$, and $Cs^+$, respectively, using a film dosage of 0.06 g/ L in the initial radionuclide solution (each radionuclide concentration = 1 mg/L and pH = 7.0). Especially, the adsorption process reached an equilibrium within 30 min. The expanded interlayer spacing of $Ti_3C_2T_x$ sheets in MXene films showed excellent radionuclide selectivity ($Cs^+$ and/or $Sr^{2+}/Co^{2+}$) (Simon, 2017). Besides, the MXene films was not only able to be easily retrieved from an aqueous solution by filtration after decontamination processes, but also to selectively separate desired target radionuclides in the solutions. Therefore, the newly developed MXene ($Ti_3C_2T_x$) films has a great potential for radionuclide removal from aqueous solution.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.2
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• pp.87-91
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• 2011

Single layer Sn doped $In_2O_3$ (ITO) films and ITO 50 nm / Au 10 nm / ITO 40 nm (IAI) multilayer films were prepared with electron beam assisted magnetron sputtering on glass substrates. The effects of the Au interlayer, post-deposition atmosphere annealing and intense electron irradiation on the methanol gas sensitivity were investigated at room temperature. As deposited ITO films did not show any diffraction peaks in the XRD pattern, while the IAI films showed the diffraction peak for $In_2O_3$ (400). In this study, the gas sensitivity of ITO and IAI films increased proportionally with the methanol vapor concentration and an intense electron beam irradiated IAI film shows the higher sensitivity than the others film. From the XRD pattern, it is supposed that increased crystallization promotes the gas sensitivity. This approach is promising in gaining improvement in the performance of IAI gas sensors used for the detection of methanol vapor at room temperature.