• Journal of Welding and Joining
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• v.5 no.4
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• pp.22-27
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• 1987

The debonding of clad steel was often occurred at interface between stainless steel and carbon steel during the fabrication of pressure vessel. In order to clarify the causes of debonding phenomena, the fabrication sequences were fully analyzed. As a result, possible factors were noticed for causing the debonding of clad steel, that is, thermal treatment on weldment and welding. Moreover the existence of hydrogen diffused from surroundings also expedites the debonding of clad steel. In this stud, the effect of welding thermal cycle, hydrogen and mixed condition under thermal treatment on the interfacial strength of clad steel were investigated to understand the debonding mechanism of clad steel. From this study, it has been confirmed that the interfacial strength of clad steel was remarkablely deteriorated due to welding and/or existence of hydrogen under thermal treatment. In the case of welding thermal cycle effect, the higher temperature at interface experienced by welding, the more reduction in interfacial strength of clad steel resulted in. And the existence of diffusible hydrogen also reduced the interfacial strength. It is also found that the interfacial strength of clad steel became much lower value than that of the as-received plate under coexistence of above mentioned factors.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.111-114
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• 2009

For the fabrication of core-shell structure bimetallic lead-free solder balls, both the critical temperature ($T_{cr}$) for the phase separation of two immiscible liquid phases and the temperature coefficient of the interfacial tension between the two separated liquid phases are required. In order to obtain this information, the temperature dependence of the surface tension of 60%Bi-24%Cu-16%Sn(-REM) alloys was measured using the constrained drop method. The slope of the temperature dependence of the surface tension changed clearly at a critical temperature for the separation of two immiscible liquid phases. The critical temperature of the 60%Bi-24%Cu-16%Sn alloy was estimated to be 1097K. An addition of 0.05% Ce decreased the critical temperature to 1085K, whereas that of 0.05% La increased it to 1117K. It was found that the surface tension and its temperature coefficient of the 60%Bi-24%Cu-16%Sn alloy were slightly increased by the addition of 0.05% Ce and 0.05% La. In addition, additions of Ce and La increased the temperature coefficient of the interfacial tension.

• Journal of Powder Materials
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• v.16 no.6
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• pp.416-423
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• 2009

Diamond/SiC composites are appropriate candidate materials for heat conduction as well as high temperature abrasive materials because they do not form liquid phase at high temperature. Diamond/SiC composite consists of diamond particles embedded in a SiC binding matrix. SiC is a hard material with strong covalent bonds having similar structure and thermal expansion with diamond. Interfacial reaction plays an important role in diamond/SiC composites. Diamond/SiC composites were fabricated by high temperature and high pressure (HPHT) sintering with different diamond content, single diamond particle size and bi-modal diamond particle size, and also the effects of composition of diamond and silicon on microstructure, mechanical properties and thermal properties of diamond/SiC composite were investigated. The critical factors influencing the dynamics of reaction between diamond and silicon, such as graphitization process and phase composition, were characterized. Key factor to enhance mechanical and thermal properties of diamond/SiC composites is to keep strong interfacial bonding at diamond/SiC composites and homogeneous dispersion of diamond particles in SiC matrix.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.39 no.8
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• pp.677-682
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• 2015

We simulate an emulsion system under simple shear rates to analyze its rheological characteristics using the lattice Boltzmann method (LBM). We calculate the relative viscosity of an emulsion under a simple shear flow along with changes in temperature, shear rate, and surfactant concentration. The relative viscosity of emulsions decreased with an increase in temperature. We observed the shear-thinning phenomena, which is responsible for the inverse proportion between the shear rate and viscosity. An increase in the interfacial tension caused a decrease in the relative viscosity of the decane-in-water emulsion because the increased deformation caused by the decreased interfacial tension significantly influenced the wall shear stress.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.386-390
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• 2006

This paper describes the ohmic contact formation of polycrystalline 3C-SiC films deposited on thermally grown Si wafers. In this work, a TiW (titanium tungsten) film as a contact material was deposited by RF magnetron sputter and annealed with the vacuum process. The specific contact resistance (${\rho}_{c}$) of the TiW contact was measured by using the C-TLM (circular transmission line method). The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature as also analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscope). All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30 min., the lowest contact resistivity of $2.90{\times}10{\Omega}cm^{2}$ was obtained due to the improved interfacial adhesion. Therefore, the good ohmic contact of polycrystalline 3C-SiC films using the TiW film is very suitable for high-temperature MEMS applications.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.825-833
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• 1997

Silicon carbide films were deposited by low pressure chemical vapor deposition(LPCVD) using MTS(CH3SICl3) in hydrogen atmosphere on (100) Si substrate. To prevent the unstable interface from being formed on the substrate, the experiments were performed through three deposition processes which were the deposition on 1) as received Si, 2) low temperature grown SiC, and 3) carbonized Si by C2H2. The microstructure of the interface between Si substrates and SiC films was observed by SEM and the adhesion between Si substrates and SiC films was measured through scratch test. The SiC films deposited on the low temperature grown SiC thin films, showed the stable interfacial structures. The interface of the SiC films deposited on carbonized Si, however, was more stable and showed better adhesion than the others. In the case of the low temperature growth process, the optimum condition was 120$0^{\circ}C$ on carbonized Si by 3% C2H2, at 105$0^{\circ}C$, 5 torr, 10 min, showed the most stable interface. As a result of XRD analysis, it was observed that the preferred orientation of (200) plane was increased with Si carbonization. On the basis of the experimental results, the models of defect formation in the process of each deposition were compared.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.18-25
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• 1998

G $d_{0.2}$C $e_{0.8}$ $O_{1.9}$(CGO) for electrolyte and L $a_{0.5}$S $r_{0.5}$Mn $O_3$(LSM50) for cathode in Solid Oxide Fuel Cells(SOFC) were synthesized by citrate process. Specimens were prepared with sintering temperatures at 110$0^{\circ}C$, 120$0^{\circ}C$ and 130$0^{\circ}C$, which were fabricated by slurry coating with citric acid contents. Interfacial resistance was measured between cathode and electrolyte using AC-impedance analyzer. With various citric acid content, the degree of agglomeration for the initial particles changed. Also sintering temperature changed the particle size and the degree of densification of cathode. Factors affecting the interfacial resistance were adherent degree of the electrolyte and cathode, distribution of TPB(three phase boundaries, TPB i.e., electrolyte/electrode/gas phase area) and porosity of cathode. By increasing the sintering temperature, particle size and densification of the cathode were increased. And then, TPB area which occurs catalytic reaction was reduced and so interfacial resistance was increased.sed.sed.d.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1873-1875
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• 1999

The effects of electrode and matrix in the PAFC were investigated using AC-impedance spectroscopy. The performance of PAFC was determined by changing external electronic load. AC impedance measurement was carried out as functions of phosphoric acid impregnation temperature. operating temperature and matrix coating method using various cathodes ; 20%Pt/C, 20%Pt-Ni/C, 20%Pt-Co-Ni/C, 10%Pt-Fe-Co/C, and 20%Pt-Fe-Co/C From the analysis of measured impedance data, the interfacial resistance decreased with increasing operating temperature. and with decreasing impregnation temperature. As compared with the alloy catalysts, Pt catalyst showed a lower interfacial resistance. This consist with the cell performance.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.1-7
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• 2020

The backside metallization process is typically used to attach a chip to a lead frame for semiconductor packaging because it has excellent bond-line and good electrical and thermal conduction. In particular, the backside metal with the Ag/Sn/Ag sandwich structure has a low-temperature bonding process and high remelting temperature because the interfacial structure composed of intermetallic compounds with higher melting temperatures than pure metal layers after die attach process. Here, we introduce a die attach process with the Ag/Sn/Ag sandwich structure to apply commercial semiconductor packages. After the die attachment, we investigated the evolution of the interfacial structures and evaluated the shear strength of the Ag/Sn/Ag sandwich structure and compared to those of a commercial backside metal (Au-12Ge).

• Journal of Ocean Engineering and Technology
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• v.13 no.4 s.35
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• pp.37-44
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• 1999

Hardness characteristics and microstructures of $Nb/MoSi_2$ laminate composites were evaluated from the variation of fabricating conditions such as preparation temperature, applied pressure and pressure holding time. $Nb/MoSi_2$ laminate composites composed of $MoSi_2$ powder and Nb sheets were fabricated by the hot press. From experimental results, it was found that the lamination from Nb sheet and $MoSi_2$ powder was an excellent strategy to improve hardness characteristics of monolithic $MoSi_2$. However, interfacial reaction products like(Nb, Mo)$SiO_2\;and\;Nb2Si_3$ formed at the interface of $Nb/MoSi_2$ and increased with fabricating temperature.